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Raddrizzatori - Singoli

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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
Record 34.936
Pagina 1044/1165
Immagine
Numero parte
Produttore
Descrizione
Disponibile
Quantità
Serie
Tipo di diodo
Tensione - Inversione CC (Vr) (Max)
Corrente - Media Rettificata (Io)
Tensione - Avanti (Vf) (Max) @ If
Velocità
Tempo di recupero inverso (trr)
Corrente - Perdita inversa @ Vr
Capacità @ Vr, F
Tipo di montaggio
Pacchetto / Custodia
Pacchetto dispositivo fornitore
Temperatura di esercizio - Giunzione
SR110 R1G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 1A DO204AL
8.982
-
Schottky
100V
1A
850mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 100V
-
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
SR110HR1G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 1A DO204AL
7.506
Automotive, AEC-Q101
Schottky
100V
1A
850mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 100V
-
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
SR115 R1G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 150V 1A DO204AL
6.300
-
Schottky
150V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 150V
-
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
SR115HR1G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 150V 1A DO204AL
5.292
Automotive, AEC-Q101
Schottky
150V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 150V
-
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
UF1A R1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A DO204AL
5.886
-
Standard
50V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 50V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
UF1AHR1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A DO204AL
5.598
Automotive, AEC-Q101
Standard
50V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 50V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
UF1B R1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO204AL
3.312
-
Standard
100V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 100V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
UF1BHR1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO204AL
8.712
Automotive, AEC-Q101
Standard
100V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 100V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
UF1D R1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A DO204AL
5.688
-
Standard
200V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 200V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
UF1DHR1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A DO204AL
8.208
Automotive, AEC-Q101
Standard
200V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 200V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
UF1G R1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO204AL
3.978
-
Standard
400V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 400V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
UF1GHR1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO204AL
7.776
Automotive, AEC-Q101
Standard
400V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 400V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
UF1J R1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
7.992
-
Standard
600V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 600V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
UF1JHR1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
7.200
Automotive, AEC-Q101
Standard
600V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 600V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
UF1K R1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 1A DO204AL
7.380
-
Standard
800V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 800V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
UF1KHR1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 1A DO204AL
3.834
Automotive, AEC-Q101
Standard
800V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 800V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
UF1M R1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1A DO204AL
3.598
-
Standard
-
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 1000V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
UF1MHR1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1A DO204AL
5.076
Automotive, AEC-Q101
Standard
-
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 1000V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
UF4001 R1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A DO204AL
6.282
-
Standard
50V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 50V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
UF4001HR1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A DO204AL
7.020
Automotive, AEC-Q101
Standard
50V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 50V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
UF4002 R1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO204AL
2.970
-
Standard
100V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 100V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
UF4002HR1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO204AL
4.086
Automotive, AEC-Q101
Standard
100V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 100V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
UF4003 R1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A DO204AL
6.462
-
Standard
200V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 200V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
UF4003HR1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A DO204AL
4.824
Automotive, AEC-Q101
Standard
200V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 200V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
UF4004 R1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO204AL
7.668
-
Standard
400V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 400V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
UF4004HR1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO204AL
5.724
Automotive, AEC-Q101
Standard
400V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 400V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
UF4005 R1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
6.786
-
Standard
600V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 600V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
UF4005HR1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
5.904
Automotive, AEC-Q101
Standard
600V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 600V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
UF4006 R1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 1A DO204AL
7.776
-
Standard
800V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 800V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
UF4006HR1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 1A DO204AL
2.160
Automotive, AEC-Q101
Standard
800V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 800V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C