Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
Record 34.936
Pagina 1016/1165
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 30MA SOD80 |
8.568 |
|
Automotive, AEC-Q101 | Schottky | 40V | 30mA (DC) | 390mV @ 1mA | Small Signal =< 200mA (Io), Any Speed | 1ns | 200nA @ 30V | 2.2pF @ 0V, 1MHz | Surface Mount | DO-213AC, MINI-MELF, SOD-80 | SOD-80 MiniMELF | 125°C (Max) |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 200MA SOD80 |
6.624 |
|
Automotive, AEC-Q101 | Schottky | 40V | 200mA (DC) | 600mV @ 200mA | Small Signal =< 200mA (Io), Any Speed | 10ns | 5µA @ 30V | 50pF @ 0V, 1MHz | Surface Mount | DO-213AC, MINI-MELF, SOD-80 | SOD-80 MiniMELF | 125°C (Max) |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 200MA SOD80 |
3.598 |
|
Automotive, AEC-Q101 | Schottky | 40V | 200mA (DC) | 600mV @ 200mA | Small Signal =< 200mA (Io), Any Speed | 10ns | 5µA @ 30V | 50pF @ 0V, 1MHz | Surface Mount | DO-213AC, MINI-MELF, SOD-80 | SOD-80 MiniMELF | 125°C (Max) |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 200MA SOD80 |
2.970 |
|
Automotive, AEC-Q101 | Schottky | 30V | 200mA (DC) | 600mV @ 200mA | Small Signal =< 200mA (Io), Any Speed | 10ns | 5µA @ 20V | 50pF @ 0V, 1MHz | Surface Mount | DO-213AC, MINI-MELF, SOD-80 | SOD-80 MiniMELF | 125°C (Max) |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 20V 200MA SOD80 |
3.960 |
|
Automotive, AEC-Q101 | Schottky | 20V | 200mA (DC) | 600mV @ 200mA | Small Signal =< 200mA (Io), Any Speed | 10ns | 5µA @ 10V | 50pF @ 0V, 1MHz | Surface Mount | DO-213AC, MINI-MELF, SOD-80 | SOD-80 MiniMELF | 125°C (Max) |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 75V 150MA SOD80 |
2.520 |
|
Automotive, AEC-Q101 | Standard | 75V | 150mA | 1V @ 50mA | Small Signal =< 200mA (Io), Any Speed | 8ns | 5µA @ 75V | 4pF @ 0V, 1MHz | Surface Mount | DO-213AC, MINI-MELF, SOD-80 | SOD-80 MiniMELF | 175°C (Max) |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 75V 150MA SOD80 |
2.100 |
|
Automotive, AEC-Q101 | Standard | 75V | 150mA | 1V @ 50mA | Small Signal =< 200mA (Io), Any Speed | 8ns | 5µA @ 75V | 4pF @ 0V, 1MHz | Surface Mount | DO-213AC, MINI-MELF, SOD-80 | SOD-80 MiniMELF | 175°C (Max) |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 75V 150MA SOD80 |
8.892 |
|
Automotive, AEC-Q101 | Standard | 75V | 150mA | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 8ns | 5µA @ 75V | 4pF @ 0V, 1MHz | Surface Mount | DO-213AC, MINI-MELF, SOD-80 | SOD-80 MiniMELF | 175°C (Max) |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 75V 150MA SOD80 |
8.064 |
|
Automotive, AEC-Q101 | Standard | 75V | 150mA | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 8ns | 5µA @ 75V | 4pF @ 0V, 1MHz | Surface Mount | DO-213AC, MINI-MELF, SOD-80 | SOD-80 MiniMELF | 175°C (Max) |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 75V 150MA DO35 |
5.976 |
|
- | Standard | 75V | 150mA | 1V @ 10mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 5µA @ 75V | 4pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 75V 150MA DO35 |
8.874 |
|
- | Standard | 75V | 150mA | 1V @ 10mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 5µA @ 75V | 4pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 75V 500MA DO35 |
5.544 |
|
- | Standard | 75V | 500mA | 1V @ 10mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 5µA @ 75V | 4pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 75V 500MA DO35 |
6.930 |
|
- | Standard | 75V | 500mA | 1V @ 10mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 5µA @ 75V | 4pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 250MA SOD80 |
3.834 |
|
Automotive, AEC-Q101 | Standard | 200V | 250mA (DC) | 1V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 100nA @ 200V | 1.5pF @ 0V, 1MHz | Surface Mount | DO-213AC, MINI-MELF, SOD-80 | SOD-80 MiniMELF | 175°C (Max) |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 700V SOD57 |
8.208 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Micro Commercial Co |
DIODE GEN PURP 2.5A 50V R3 |
4.950 |
|
- | Standard | 50V | 2.5A | 1V @ 2.5A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 50V | 35pF @ 4V, 1MHz | Through Hole | R-3, Axial | R-3 | -55°C ~ 150°C |
|
|
|
Micro Commercial Co |
DIODE GEN PURP 2.5A 200V R3 |
4.788 |
|
- | Standard | 200V | 2.5A | 1V @ 2.5A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 200V | 35pF @ 4V, 1MHz | Through Hole | R-3, Axial | R-3 | -55°C ~ 150°C |
|
|
|
Micro Commercial Co |
DIODE GEN PURP 2.5A 400V R3 |
2.016 |
|
- | Standard | 400V | 2.5A | 1V @ 2.5A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 400V | 35pF @ 4V, 1MHz | Through Hole | R-3, Axial | R-3 | -55°C ~ 150°C |
|
|
|
Micro Commercial Co |
DIODE GEN PURP 2.5A 600V R3 |
6.426 |
|
- | Standard | 600V | 2.5A | 1V @ 2.5A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 600V | 35pF @ 4V, 1MHz | Through Hole | R-3, Axial | R-3 | -55°C ~ 150°C |
|
|
|
Micro Commercial Co |
DIODE GEN PURP 2.5A 800V R3 |
4.986 |
|
- | Standard | 800V | 2.5A | 1V @ 2.5A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 800V | 35pF @ 4V, 1MHz | Through Hole | R-3, Axial | R-3 | -55°C ~ 150°C |
|
|
|
Micro Commercial Co |
DIODE GEN PURP 2.5A 1000V R3 |
8.118 |
|
- | Standard | 1000V | 2.5A | 1V @ 2.5A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 1000V | 35pF @ 4V, 1MHz | Through Hole | R-3, Axial | R-3 | -55°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 1200V 10A TO247-3 |
1.184 |
|
CoolSiC™+ | Silicon Carbide Schottky | 1200V | 10A (DC) | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 240µA @ 1200V | 580pF @ 1V, 1MHz | Through Hole | TO-247-3 | PG-TO247-3-41 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 1200V 15A TO247-3 |
283 |
|
CoolSiC™+ | Silicon Carbide Schottky | 1200V | 15A (DC) | 1.8V @ 15A | No Recovery Time > 500mA (Io) | 0ns | 305µA @ 1200V | 870pF @ 1V, 1MHz | Through Hole | TO-247-3 | PG-TO247-3 | -55°C ~ 175°C |
|
|
|
Central Semiconductor Corp |
DIODE GP 100V 150MA DO35 |
5.526 |
|
- | Standard | 100V | 150mA | 1V @ 10mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 25nA @ 20V | 4pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 200°C |
|
|
|
Central Semiconductor Corp |
DIODE GEN PURP 20V DO35 |
3.168 |
|
- | Standard | 20V | - | 2.66V @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 10µA @ 20V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 150°C |
|
|
|
Central Semiconductor Corp |
DIODE GEN PURP 20V DO35 |
4.644 |
|
- | Standard | 20V | - | 2.66V @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 10µA @ 20V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 150°C |
|
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Central Semiconductor Corp |
DIODE GEN PURP 20V DO35 |
8.838 |
|
- | Standard | 20V | - | 3.7V @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 10µA @ 20V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE SIC 600V 4A SAWN WAFER |
7.020 |
|
CoolSiC™+ | Silicon Carbide Schottky | 600V | 4A (DC) | 1.9V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 600V | 130pF @ 1V, 1MHz | Surface Mount | Die | Die | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE GEN PURPOSE SAWN WAFER |
5.706 |
|
* | - | - | - | - | - | - | - | - | Surface Mount | Die | Sawn on foil | - |
|
|
|
Infineon Technologies |
DIODE SIC 600V 5A SAWN WAFER |
7.326 |
|
CoolSiC™+ | Silicon Carbide Schottky | 600V | 5A (DC) | 1.7V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 70µA @ 600V | 240pF @ 1V, 1MHz | Surface Mount | Die | Die | -55°C ~ 175°C |