Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
Record 34.936
Pagina 1015/1165
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED |
4.590 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED |
7.398 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED |
7.344 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED |
2.358 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 75A DIE |
3.384 |
|
- | Standard | 1200V | 75A | 2.7V @ 75A | Fast Recovery =< 500ns, > 200mA (Io) | 285ns | 1.5µA @ 1200V | - | Surface Mount | Die | Die | -40°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED |
5.364 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED |
2.934 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 100A DIE |
2.124 |
|
- | Standard | 1200V | 100A | 2.7V @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | 270ns | 2µA @ 1200V | - | Surface Mount | Die | Die | -40°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED |
4.032 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED |
7.236 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED |
2.556 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 5A DIE |
7.254 |
|
- | Standard | 1200V | 5A | 2.7V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 96ns | 100nA @ 1200V | - | Surface Mount | Die | Die | -40°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 150A DIE |
8.064 |
|
- | Standard | 1200V | 150A | 2.7V @ 150A | Fast Recovery =< 500ns, > 200mA (Io) | 355ns | 3µA @ 1200V | - | Surface Mount | Die | Die | -40°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED |
2.052 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED |
6.768 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 10A DIE |
8.982 |
|
- | Standard | 1200V | 10A | 2.7V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 154ns | 200nA @ 1200V | - | Surface Mount | Die | Die | -40°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED |
3.924 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED |
4.752 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
SMC Diode Solutions |
DIODE GEN PURP 1KV 1A DO41 |
5.310 |
|
- | Standard | 1000V | 1A | 1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 1000V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 125°C |
|
|
|
SMC Diode Solutions |
DIODE GEN PURP 200V 3A DO201AD |
2.592 |
|
- | Standard | 200V | 3A | 1.2V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 200V | 30pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
|
|
|
SMC Diode Solutions |
DIODE GEN PURP 1KV 1A DO41 |
7.398 |
|
- | Standard | 1000V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 5µA @ 1000V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 150°C |
|
|
|
SMC Diode Solutions |
DIODE GEN PURP 800V 3A SMC |
3.402 |
|
- | Standard | 800V | 3A | 1.3V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 5µA @ 800V | 60pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | SMC | -65°C ~ 150°C |
|
|
|
SMC Diode Solutions |
DIODE GEN PURP 400V 1A DO41 |
3.744 |
|
- | Standard | 400V | 1A | 1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 400V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -55°C ~ 150°C |
|
|
|
SMC Diode Solutions |
DIODE GEN PURP 1KV 1A DO41 |
4.590 |
|
- | Standard | 1000V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 1000V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 3A SOD64 |
4.284 |
|
- | Standard | 600V | 3A | 1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 5µA @ 600V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 30MA SOD80 |
5.148 |
|
Automotive, AEC-Q101 | Schottky | 60V | 30mA (DC) | 410mV @ 1mA | Small Signal =< 200mA (Io), Any Speed | 1ns | 200nA @ 50V | 2pF @ 0V, 1MHz | Surface Mount | DO-213AC, MINI-MELF, SOD-80 | SOD-80 MiniMELF | 125°C (Max) |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 30MA SOD80 |
Richiedi un preventivo |
|
Automotive, AEC-Q101 | Schottky | 60V | 30mA (DC) | 410mV @ 1mA | Small Signal =< 200mA (Io), Any Speed | 1ns | 200nA @ 50V | 2pF @ 0V, 1MHz | Surface Mount | DO-213AC, MINI-MELF, SOD-80 | SOD-80 MiniMELF | 125°C (Max) |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 50V 30MA SOD80 |
2.916 |
|
Automotive, AEC-Q101 | Schottky | 50V | 30mA (DC) | 400mV @ 1mA | Small Signal =< 200mA (Io), Any Speed | 1ns | 200nA @ 40V | 2.1pF @ 0V, 1MHz | Surface Mount | DO-213AC, MINI-MELF, SOD-80 | SOD-80 MiniMELF | 125°C (Max) |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 50V 30MA SOD80 |
2.394 |
|
Automotive, AEC-Q101 | Schottky | 50V | 30mA (DC) | 400mV @ 1mA | Small Signal =< 200mA (Io), Any Speed | 1ns | 200nA @ 40V | 2.2pF @ 0V, 1MHz | Surface Mount | DO-213AC, MINI-MELF, SOD-80 | SOD-80 MiniMELF | 125°C (Max) |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 30MA SOD80 |
5.346 |
|
Automotive, AEC-Q101 | Schottky | 40V | 30mA (DC) | 390mV @ 1mA | Small Signal =< 200mA (Io), Any Speed | 1ns | 200nA @ 30V | 2.2pF @ 0V, 1MHz | Surface Mount | DO-213AC, MINI-MELF, SOD-80 | SOD-80 MiniMELF | 125°C (Max) |