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Raddrizzatori a ponte

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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori a ponte
Record 5.469
Pagina 80/183
Immagine
Numero parte
Produttore
Descrizione
Disponibile
Quantità
Serie
Tipo di diodo
Tecnologia
Tensione - Picco inverso (Max)
Corrente - Media Rettificata (Io)
Tensione - Avanti (Vf) (Max) @ If
Corrente - Perdita inversa @ Vr
Temperatura di esercizio
Tipo di montaggio
Pacchetto / Custodia
Pacchetto dispositivo fornitore
TS50P05G C2G
Taiwan Semiconductor Corporation
BRIDGE RECT 1P 600V 50A TS-6P
3.526
-
Single Phase
Standard
600V
50A
1.1V @ 25A
10µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, TS-6P
TS-6P
TS50P06G C2G
Taiwan Semiconductor Corporation
BRIDGE RECT 1P 800V 50A TS-6P
4.968
-
Single Phase
Standard
800V
50A
1.1V @ 25A
10µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, TS-6P
TS-6P
TS50P07G C2G
Taiwan Semiconductor Corporation
BRIDGE RECT 1PHASE 1KV 50A TS-6P
7.470
-
Single Phase
Standard
1kV
50A
1.1V @ 25A
10µA @ 1000V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, TS-6P
TS-6P
BU2006-M3/51
Vishay Semiconductor Diodes Division
BRIDGE RECT 1P 600V 20A BU
8.010
-
Single Phase
Standard
600V
20A
1.05V @ 10A
5µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, BU
isoCINK+™ BU
BU2008-M3/51
Vishay Semiconductor Diodes Division
BRIDGE RECT 1P 800V 20A BU
6.264
-
Single Phase
Standard
800V
20A
1.05V @ 10A
5µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, BU
isoCINK+™ BU
BU2010-M3/51
Vishay Semiconductor Diodes Division
BRIDGE RECT 1P 1KV 20A BU
5.562
-
Single Phase
Standard
1kV
20A
1.05V @ 10A
5µA @ 1000V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, BU
isoCINK+™ BU
GBJ8005-F
Diodes Incorporated
BRIDGE RECT 1PHASE 50V 8A GBJ
4.662
-
Single Phase
Standard
50V
8A
1V @ 4A
5µA @ 50V
-65°C ~ 150°C (TJ)
Through Hole
4-SIP, GBJ
GBJ
CBR1-D100S
Central Semiconductor Corp
BRIDGE RECT 1PHASE 1KV 1A 4SMDIP
8.802
-
Single Phase
Standard
1kV
1A
1.1V @ 1A
10µA @ 1000V
-65°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
4-SMDIP
GSIB1520N-M3/45
Vishay Semiconductor Diodes Division
BRIDGE RECT 1P 200V 15A GSIB-5S
4.770
-
Single Phase
Standard
200V
15A
950mV @ 7.5A
10µA @ 200V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GSIB-5S
GSIB-5S
GSIB1540N-M3/45
Vishay Semiconductor Diodes Division
BRIDGE RECT 1P 400V 15A GSIB-5S
4.716
-
Single Phase
Standard
400V
15A
950mV @ 7.5A
10µA @ 400V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GSIB-5S
GSIB-5S
GSIB1560N-M3/45
Vishay Semiconductor Diodes Division
BRIDGE RECT 1P 600V 15A GSIB-5S
7.380
-
Single Phase
Standard
600V
15A
950mV @ 7.5A
10µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GSIB-5S
GSIB-5S
GSIB2020N-M3/45
Vishay Semiconductor Diodes Division
BRIDGE RECT 1P 200V 20A GSIB-5S
4.212
-
Single Phase
Standard
200V
20A
1V @ 7.5A
10µA @ 200V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GSIB-5S
GSIB-5S
GSIB2040N-M3/45
Vishay Semiconductor Diodes Division
BRIDGE RECT 1P 400V 20A GSIB-5S
2.124
-
Single Phase
Standard
400V
20A
1V @ 7.5A
10µA @ 400V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GSIB-5S
GSIB-5S
GSIB2060N-M3/45
Vishay Semiconductor Diodes Division
BRIDGE RECT 1P 600V 20A GSIB-5S
4.644
-
Single Phase
Standard
600V
20A
1V @ 7.5A
10µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GSIB-5S
GSIB-5S
GSIB2080N-M3/45
Vishay Semiconductor Diodes Division
BRIDGE RECT 1P 800V 20A GSIB-5S
6.174
-
Single Phase
Standard
800V
20A
1V @ 7.5A
10µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GSIB-5S
GSIB-5S
BU25H06-M3/A
Vishay Semiconductor Diodes Division
BRIDGE RECT 1P 600V 3.5A BU
8.874
isoCink+™
Single Phase
Standard
600V
3.5A
1.05V @ 12.5A
5µA @ 600V
-55°C ~ 175°C (TJ)
Through Hole
4-SIP, BU
isoCINK+™ BU
BU25H08-M3/A
Vishay Semiconductor Diodes Division
BRIDGE RECT 1P 800V 3.5A BU
3.312
isoCink+™
Single Phase
Standard
800V
3.5A
1.05V @ 12.5A
5µA @ 800V
-55°C ~ 175°C (TJ)
Through Hole
4-SIP, BU
isoCINK+™ BU
GBU15005-G
Comchip Technology
BRIDGE RECT 1PHASE 50V 15A GBU
3.598
-
Single Phase
Standard
50V
15A
1V @ 7.5A
10µA @ 50V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GBU1504-G
Comchip Technology
BRIDGE RECT 1PHASE 400V 15A GBU
3.870
-
Single Phase
Standard
400V
15A
1V @ 7.5A
10µA @ 400V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GBJ2506-G
Comchip Technology
BRIDGE RECT 1PHASE 600V 25A GBJ
4.014
-
Single Phase
Standard
600V
25A
1V @ 12.5A
10µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBJ
GBJ
GBJ2506-03-G
Comchip Technology
BRIDGE RECT 1PHASE 600V 25A GBJ
4.356
-
Single Phase
Standard
600V
25A
1V @ 12.5A
10µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBJ
GBJ
GBJ2506-04-G
Comchip Technology
BRIDGE RECT 1PHASE 600V 25A GBJ
2.610
-
Single Phase
Standard
600V
25A
1V @ 12.5A
10µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBJ
GBJ
GBJ2506-05-G
Comchip Technology
BRIDGE RECT 1PHASE 600V 25A GBJ
8.982
-
Single Phase
Standard
600V
25A
1V @ 12.5A
10µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBJ
GBJ
GBJ2506-06-G
Comchip Technology
BRIDGE RECT 1PHASE 600V 25A GBJ
8.964
-
Single Phase
Standard
600V
25A
1V @ 12.5A
10µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBJ
GBJ
KBU35005-G
Comchip Technology
BRIDGE RECT 1PHASE 50V 35A KBU
2.718
-
Single Phase
Standard
50V
35A
1.1V @ 17.5A
10µA @ 50V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBU
KBU
GBJ10005-G
Comchip Technology
BRIDGE RECT 1PHASE 50V 10A GBJ
5.616
-
Single Phase
Standard
50V
10A
1.05V @ 5A
10µA @ 50V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBJ
GBJ
GBJ1004-G
Comchip Technology
BRIDGE RECT 1PHASE 400V 10A GBJ
4.788
-
Single Phase
Standard
400V
10A
1.05V @ 5A
10µA @ 400V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBJ
GBJ
TS50P05GHC2G
Taiwan Semiconductor Corporation
BRIDGE RECT 1P 600V 50A TS-6P
7.164
Automotive, AEC-Q101
Single Phase
Standard
600V
50A
1.1V @ 25A
10µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, TS-6P
TS-6P
TS50P06GHC2G
Taiwan Semiconductor Corporation
BRIDGE RECT 1P 800V 50A TS-6P
7.524
Automotive, AEC-Q101
Single Phase
Standard
800V
50A
1.1V @ 25A
10µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, TS-6P
TS-6P
TS50P07GHC2G
Taiwan Semiconductor Corporation
BRIDGE RECT 1PHASE 1KV 50A TS-6P
5.436
Automotive, AEC-Q101
Single Phase
Standard
1kV
50A
1.1V @ 25A
10µA @ 1000V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, TS-6P
TS-6P