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Raddrizzatori a ponte

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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori a ponte
Record 5.469
Pagina 77/183
Immagine
Numero parte
Produttore
Descrizione
Disponibile
Quantità
Serie
Tipo di diodo
Tecnologia
Tensione - Picco inverso (Max)
Corrente - Media Rettificata (Io)
Tensione - Avanti (Vf) (Max) @ If
Corrente - Perdita inversa @ Vr
Temperatura di esercizio
Tipo di montaggio
Pacchetto / Custodia
Pacchetto dispositivo fornitore
GBU604-G
Comchip Technology
BRIDGE RECT 1PHASE 400V 6A GBU
4.158
-
Single Phase
Standard
400V
6A
1V @ 3A
10µA @ 400V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GBU606-G
Comchip Technology
BRIDGE RECT 1PHASE 600V 6A GBU
2.016
-
Single Phase
Standard
600V
6A
1V @ 3A
10µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
BU1206-M3/51
Vishay Semiconductor Diodes Division
BRIDGE RECT 1P 600V 12A BU
7.758
-
Single Phase
Standard
600V
12A
1.05V @ 6A
5µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, BU
isoCINK+™ BU
BU1208-M3/51
Vishay Semiconductor Diodes Division
BRIDGE RECT 1P 800V 12A BU
3.870
-
Single Phase
Standard
800V
12A
1.05V @ 6A
5µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, BU
isoCINK+™ BU
BU1210-M3/51
Vishay Semiconductor Diodes Division
BRIDGE RECT 1P 1KV 12A BU
2.826
-
Single Phase
Standard
1kV
12A
1.05V @ 6A
5µA @ 1000V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, BU
isoCINK+™ BU
TS35P05GHC2G
Taiwan Semiconductor Corporation
BRIDGE RECT 1P 600V 35A TS-6P
6.228
Automotive, AEC-Q101
Single Phase
Standard
600V
35A
1.1V @ 17.5A
10µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, TS-6P
TS-6P
TS35P06GHC2G
Taiwan Semiconductor Corporation
BRIDGE RECT 1P 800V 35A TS-6P
8.586
Automotive, AEC-Q101
Single Phase
Standard
800V
35A
1.1V @ 17.5A
10µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, TS-6P
TS-6P
TS35P06GHD2G
Taiwan Semiconductor Corporation
BRIDGE RECT 1P 800V 35A TS-6P
6.588
Automotive, AEC-Q101
Single Phase
Standard
800V
35A
1.1V @ 17.5A
10µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, TS-6P
TS-6P
TS35P07GHC2G
Taiwan Semiconductor Corporation
BRIDGE RECT 1PHASE 1KV 35A TS-6P
5.094
Automotive, AEC-Q101
Single Phase
Standard
1kV
35A
1.1V @ 17.5A
10µA @ 1000V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, TS-6P
TS-6P
TS40P05GHC2G
Taiwan Semiconductor Corporation
BRIDGE RECT 1P 600V 40A TS-6P
2.898
Automotive, AEC-Q101
Single Phase
Standard
600V
40A
1.1V @ 20A
10µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, TS-6P
TS-6P
TS40P06GHC2G
Taiwan Semiconductor Corporation
BRIDGE RECT 1P 800V 40A TS-6P
4.716
Automotive, AEC-Q101
Single Phase
Standard
800V
40A
1.1V @ 20A
10µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, TS-6P
TS-6P
TS40P07GHC2G
Taiwan Semiconductor Corporation
BRIDGE RECT 1PHASE 1KV 40A TS-6P
7.704
Automotive, AEC-Q101
Single Phase
Standard
1kV
40A
1.1V @ 20A
10µA @ 1000V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, TS-6P
TS-6P
TS40P07GHD2G
Taiwan Semiconductor Corporation
BRIDGE RECT 1PHASE 1KV 40A TS-6P
6.750
Automotive, AEC-Q101
Single Phase
Standard
1kV
40A
1.1V @ 20A
10µA @ 1000V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, TS-6P
TS-6P
GBU6C-E3/45
Vishay Semiconductor Diodes Division
BRIDGE RECT 1PHASE 150V 3.8A GBU
2.106
-
Single Phase
Standard
150V
3.8A
1V @ 6A
5µA @ 150V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
KBU10005-G
Comchip Technology
BRIDGE RECT 1PHASE 50V 10A KBU
3.400
-
Single Phase
Standard
50V
10A
1V @ 5A
10µA @ 50V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBU
KBU
GBU808-G
Comchip Technology
BRIDGE RECT 1PHASE 800V 8A GBU
3.960
-
Single Phase
Standard
800V
8A
1V @ 4A
10µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GBU810-G
Comchip Technology
BRIDGE RECT 1PHASE 1KV 8A GBU
3.780
-
Single Phase
Standard
1kV
8A
1V @ 4A
10µA @ 1000V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GBU8K-M3/45
Vishay Semiconductor Diodes Division
BRIDGE RECT 1PHASE 800V 8A GBU
8.316
-
Single Phase
Standard
800V
8A
1V @ 8A
5µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GSIB15A20-E3/45
Vishay Semiconductor Diodes Division
BRIDGE RECT 1P 200V 3.5A GSIB-5S
7.146
-
Single Phase
Standard
200V
3.5A
1V @ 7.5A
10µA @ 200V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GSIB-5S
GSIB-5S
GSIB15A40-E3/45
Vishay Semiconductor Diodes Division
BRIDGE RECT 1P 400V 3.5A GSIB-5S
3.690
-
Single Phase
Standard
400V
3.5A
1V @ 7.5A
10µA @ 400V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GSIB-5S
GSIB-5S
GBU608-G
Comchip Technology
BRIDGE RECT 1PHASE 800V 6A GBU
2.862
-
Single Phase
Standard
800V
6A
1V @ 3A
10µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GBU610-G
Comchip Technology
BRIDGE RECT 1PHASE 1KV 6A GBU
5.760
-
Single Phase
Standard
1kV
6A
1V @ 3A
10µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
KBU3501-G
Comchip Technology
BRIDGE RECT 1PHASE 100V 4.2A KBU
4.644
-
Single Phase
Standard
100V
4.2A
1.1V @ 17.5A
10µA @ 100V
-55°C ~ 125°C (TJ)
Through Hole
4-SIP, KBU
KBU
KBU3502-G
Comchip Technology
BRIDGE RECT 1PHASE 200V 4.2A KBU
2.916
-
Single Phase
Standard
200V
4.2A
1.1V @ 17.5A
10µA @ 200V
-55°C ~ 125°C (TJ)
Through Hole
4-SIP, KBU
KBU
KBU3506-G
Comchip Technology
BRIDGE RECT 1PHASE 600V 4.2A KBU
3.006
-
Single Phase
Standard
600V
4.2A
1.1V @ 17.5A
10µA @ 600V
-55°C ~ 125°C (TJ)
Through Hole
4-SIP, KBU
KBU
CBR1-D080
Central Semiconductor Corp
BRIDGE RECT 1PHASE 800V 1A 4DIP
7.596
-
Single Phase
Standard
800V
1A
1.1V @ 1A
10µA @ 800V
-65°C ~ 150°C (TJ)
Through Hole
4-EDIP (0.300", 7.62mm)
4-DIP
DF1508S
Diodes Incorporated
BRIDGE RECT 1P 800V 1.5A DF-S
25.928
-
Single Phase
Standard
800V
1.5A
1.1V @ 1.5A
10µA @ 800V
-65°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
DF-S
VS-2KBB05R
Vishay Semiconductor Diodes Division
RECTIFIER BRIDGE 50V 1.9A D-37
8.604
*
-
-
-
-
-
-
-
-
-
-
KBU3508-G
Comchip Technology
BRIDGE RECT 1PHASE 800V 4.2A KBU
4.068
-
Single Phase
Standard
800V
4.2A
1.1V @ 17.5A
10µA @ 800V
-55°C ~ 125°C (TJ)
Through Hole
4-SIP, KBU
KBU
BU1006A5S-M3/45
Vishay Semiconductor Diodes Division
BRIDGE RECT 1P 600V 10A BU-5S
7.236
-
Single Phase
Standard
600V
10A
1.1V @ 5A
10µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-ESIP, BU-5S
isoCINK+™ BU-5S