ON Semiconductor Raddrizzatori - Singoli
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Mostra filtri
Ripristina filtri
Applica filtri
CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
ProduttoreON Semiconductor
Record 2.271
Pagina 31/76
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ON Semiconductor |
DIODE GEN PURP 400V 8A TO277-3 |
7.488 |
|
Automotive, AEC-Q101 | Standard | 400V | 8A | 1.1V @ 8A | Standard Recovery >500ns, > 200mA (Io) | 3.37µs | 5µA @ 400V | 118pF @ 0V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277-3 | -55°C ~ 150°C |
|
|
|
ON Semiconductor |
DIODE SCHOTTKY 150V 12A TO277-3 |
3.708 |
|
Automotive, AEC-Q101 | Schottky | 150V | 12A | 820mV @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | - | 30µA @ 150V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277-3 | -55°C ~ 150°C |
|
|
|
ON Semiconductor |
6A 600V ULTRA FAST RECTIFIER |
3.006 |
|
* | - | - | - | - | - | - | - | - | Surface Mount | TO-277, 3-PowerDFN | TO-277-3 | - |
|
|
|
ON Semiconductor |
DIODE SCHOTTKY 40V 4A 5DFN |
6.660 |
|
- | Schottky | 40V | 4A | 650mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | - | 800µA @ 40V | - | Surface Mount | 8-PowerTDFN, 5 Leads | 5-DFN (5x6) (8-SOFL) | -55°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 600V 8A DPAK |
3.744 |
|
Automotive, AEC-Q101, STEALTH™ II | Standard | 600V | 8A | 2.6V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 100µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | -65°C ~ 150°C |
|
|
|
ON Semiconductor |
DIODE SCHOTTKY 60V 20A TO277-3 |
6.732 |
|
- | Schottky | 60V | 20A | 600mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 320µA @ 60V | 771pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277-3 | -55°C ~ 150°C |
|
|
|
ON Semiconductor |
DIODE SCHOTTKY 45V 10A DPAK |
7.326 |
|
SWITCHMODE™ | Schottky | 45V | 10A | 840mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 45V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | -65°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE SCHOTTKY 45V 20A 5DFN |
8.496 |
|
- | Schottky | 45V | 20A | 640mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 45V | - | Surface Mount | 8-PowerTDFN, 5 Leads | 5-DFN (5x6) (8-SOFL) | -55°C ~ 150°C |
|
|
|
ON Semiconductor |
DIODE SCHOTTKY 100V 30A 5DFN |
8.820 |
|
- | Schottky | 100V | 30A | 900mV @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | - | Surface Mount | 8-PowerTDFN, 5 Leads | 5-DFN (5x6) (8-SOFL) | -55°C ~ 150°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 600V 6A TO252-3 |
6.138 |
|
Automotive, AEC-Q101 | Standard | 600V | 6A | 2.1V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 100µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252AA | -55°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 600V 6A DPAK |
2.916 |
|
Automotive, AEC-Q101 | Standard | 600V | 6A | 1.5V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 83ns | 100µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252AA | -55°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE SCHOTTKY 20V 3A DPAK |
3.580 |
|
SWITCHMODE™ | Schottky | 20V | 3A | 600mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 20V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | -65°C ~ 150°C |
|
|
|
ON Semiconductor |
DIODE SCHOTTKY 20V 3A DPAK |
6.696 |
|
SWITCHMODE™ | Schottky | 20V | 3A | 600mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 20V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | -65°C ~ 150°C |
|
|
|
ON Semiconductor |
DIODE SCHOTTKY 30V 3A DPAK |
5.166 |
|
SWITCHMODE™ | Schottky | 30V | 3A | 600mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 30V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | -65°C ~ 150°C |
|
|
|
ON Semiconductor |
DIODE SCHOTTKY 120V 20A TO277-3 |
4.842 |
|
Automotive, AEC-Q101 | Schottky | 120V | 20A | 790mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 35µA @ 120V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277-3 | -55°C ~ 150°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 600V 6A DPAK |
8.820 |
|
- | Standard | 600V | 6A | 3V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 30µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | -65°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE SCHOTTKY 150V 20A TO277-3 |
5.616 |
|
Automotive, AEC-Q101 | Schottky | 150V | 20A | 840mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 30µA @ 150V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277-3 | -55°C ~ 150°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 600V 4A TO252 |
4.644 |
|
- | Standard | 600V | 4A | 1.5V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 100µA @ 600V | 15pF @ 10V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252AA | -65°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 600V 8A TO263-2 |
1.819 |
|
Stealth™ | Standard | 600V | 8A | 2.4V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 100µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -55°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE SCHOTTKY 40V 12A 5DFN |
8.028 |
|
- | Schottky | 40V | 12A | 680mV @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Surface Mount | 8-PowerTDFN, 5 Leads | 5-DFN (5x6) (8-SOFL) | -55°C ~ 150°C |
|
|
|
ON Semiconductor |
DIODE SCHOTTKY 10V 4A SMC |
5.382 |
|
- | Schottky | 10V | 4A | 500mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 10V | - | Surface Mount | DO-214AB, SMC | SMC | -65°C ~ 150°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 1.2KV 18A TO263-2 |
15.000 |
|
Stealth™ | Standard | 1200V | 18A | 3.3V @ 18A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 100µA @ 1200V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | -55°C ~ 175°C |
|
|
|
ON Semiconductor |
650V 6A SIC SBD |
2.124 |
|
- | Silicon Carbide Schottky | 650V | 8A (DC) | 1.75V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 365pF @ 1V, 100kHz | Surface Mount | 4-PowerTSFN | 4-PQFN (8x8) | -55°C ~ 175°C |
|
|
|
ON Semiconductor |
650V 10A SIC SBD |
8.442 |
|
- | Silicon Carbide Schottky | 650V | 18A (DC) | 1.75V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 575pF @ 1V, 100kHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252) | -55°C ~ 175°C |
|
|
|
ON Semiconductor |
650V 10A SIC SBD GEN1.5 |
8.838 |
|
Automotive, AEC-Q101 | Silicon Carbide Schottky | 650V | 27A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 40µA @ 650V | 421pF @ 1V, 100kHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK-3 (TO-263) | -55°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 600V 50A TO247 |
10.104 |
|
Stealth™ | Standard | 600V | 50A | 1.54V @ 50A | Fast Recovery =< 500ns, > 200mA (Io) | 124ns | 100µA @ 600V | - | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
|
|
|
ON Semiconductor |
650V 12A SIC SBD |
2.052 |
|
- | Silicon Carbide Schottky | 650V | 12.5A (DC) | 1.75V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 665pF @ 1V, 100kHz | Surface Mount | 4-PowerTSFN | 4-PQFN (8x8) | -55°C ~ 175°C |
|
|
|
ON Semiconductor |
1200V 8A SIC SBD |
7.488 |
|
- | Silicon Carbide Schottky | 1200V | 22.5A (DC) | 1.75V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 1200V | 538pF @ 1V, 100kHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | -55°C ~ 175°C |
|
|
|
ON Semiconductor |
650V 10A SIC SBD GEN1.5 |
7.902 |
|
Automotive, AEC-Q101 | Silicon Carbide Schottky | 650V | 13.5A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 40µA @ 650V | 424pF @ 1V, 100kHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252) | -55°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE SCHOTTKY 1.2KV TO252 |
3.204 |
|
- | Silicon Carbide Schottky | 1200V | - | 1.75V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 1200V | 612pF @ 1V, 100kHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | - |