Infineon Technologies Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
ProduttoreInfineon Technologies
Record 6.749
Pagina 80/225
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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Infineon Technologies |
MOSFET N-CH 40V 80A TO262-3-1 |
5.400 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 4.6mOhm @ 80A, 10V | 4V @ 35µA | 43nC @ 10V | ±20V | 3440pF @ 25V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 40V 80A TO220-3-1 |
6.642 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 4.6mOhm @ 80A, 10V | 4V @ 35µA | 43nC @ 10V | ±20V | 3440pF @ 25V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 60V 50A IPAK |
7.146 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 4.5V, 10V | 6.8mOhm @ 50A, 10V | 2.5V @ 100µA | 49nC @ 4.5V | ±16V | 3779pF @ 50V | - | 143W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 60V 45A TO263-3 |
7.380 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 45A (Tc) | 10V | 9.4mOhm @ 45A, 10V | 4V @ 34µA | 47nC @ 10V | ±20V | 3785pF @ 25V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET P-CH 100V 23A D2PAK |
4.842 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 100V | 23A (Tc) | 10V | 117mOhm @ 14A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | 1450pF @ 25V | - | 3.1W (Ta), 110W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET P-CH 55V 31A D2PAK |
2.718 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 55V | 31A (Tc) | 10V | 60mOhm @ 16A, 10V | 4V @ 250µA | 63nC @ 10V | ±20V | 1200pF @ 25V | - | 3.8W (Ta), 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET P-CH 150V 13A DPAK |
5.292 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 150V | 13A (Tc) | 10V | 295mOhm @ 6.6A, 10V | 4V @ 250µA | 66nC @ 10V | ±20V | 860pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 40V 90A TO252-3 |
4.482 |
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* | - | - | - | - | 10V | - | - | - | ±20V | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET P-CH 60V TO252-3 |
6.372 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 60V | 35A (Tc) | 10V | 38mOhm @ 35A, 10V | 4V @ 1.7mA | 63nC @ 10V | ±20V | 2500pF @ 30V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 60V 50A TO-220-3 |
5.580 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 4.5V, 10V | 8.4mOhm @ 50A, 10V | 2.2V @ 34µA | 29nC @ 4.5V | ±20V | 4900pF @ 30V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH TO262-3 |
5.400 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 4.5V, 10V | 8.4mOhm @ 50A, 10V | 2.2V @ 34µA | 29nC @ 4.5V | ±20V | 4900pF @ 30V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH TO263-3 |
7.920 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 250V | 17A (Tc) | 10V | 100mOhm @ 17A, 10V | 4V @ 54µA | 19nC @ 10V | ±20V | 1500pF @ 25V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 60V 45A PG-TO220-3 |
3.942 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 45A (Tc) | 4.5V, 10V | 8.2mOhm @ 45A, 10V | 2.2V @ 35µA | 64nC @ 10V | ±16V | 4780pF @ 25V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 30V 22A TO263-3 |
6.066 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 22A (Tc) | 4.5V, 10V | 14.6mOhm @ 22A, 10V | 2.2V @ 10µA | 14nC @ 10V | ±16V | 980pF @ 25V | - | 31W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CHANNEL_100+ |
3.454 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 120V 70A TO252-3 |
5.940 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 120V | 70A (Tc) | 10V | 11.1mOhm @ 70A, 10V | 4V @ 83µA | 65nC @ 10V | ±20V | 4355pF @ 25V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
LOW POWER_LEGACY |
2.898 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 30V 29A 8VQFN |
7.434 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 29A (Ta), 100A (Tc) | 4.5V, 10V | 2.5mOhm @ 50A, 10V | 2.35V @ 100µA | 55nC @ 10V | ±20V | 3635pF @ 25V | - | 3.6W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) Single Die | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 30V 27A DIRECTFET |
5.994 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 27A (Ta), 150A (Tc) | 4.5V, 10V | 2.5mOhm @ 27A, 10V | 2.35V @ 100µA | 54nC @ 4.5V | ±20V | 4404pF @ 15V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
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Infineon Technologies |
MOSFET N-CH 25V 19A DIRECTFET-SQ |
7.290 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 19A (Ta), 84A (Tc) | 4.5V, 10V | 3.8mOhm @ 19A, 10V | 2.35V @ 25µA | 20nC @ 4.5V | ±20V | 1810pF @ 13V | - | 2.2W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ SQ | DirectFET™ Isometric SQ |
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Infineon Technologies |
MOSFET N-CH 30V 32A DIRECTFET |
2.916 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 32A (Ta), 180A (Tc) | 4.5V, 10V | 1.7mOhm @ 32A, 10V | 2.35V @ 100µA | 74nC @ 4.5V | ±20V | 6190pF @ 15V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
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Infineon Technologies |
MOSFET N-CH 40V 100A DPAK |
4.662 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 3.1mOhm @ 76A, 10V | 3.9V @ 100µA | 99nC @ 10V | ±20V | 3171pF @ 25V | - | 99W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V TO-220 |
4.752 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 53A (Tc) | 10V | 16.5mOhm @ 53A, 10V | 4V @ 61µA | 48nC @ 10V | ±20V | 3220pF @ 50V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
PLANAR >= 100V |
3.726 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 500V | 4.5A (Tc) | 10V | 1.5Ohm @ 2.7A, 10V | 4V @ 250µA | 38nC @ 10V | ±20V | 610pF @ 25V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 150V 33A D2PAK |
3.204 |
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- | N-Channel | MOSFET (Metal Oxide) | 150V | 33A (Tc) | 10V | 42mOhm @ 21A, 10V | 5V @ 100µA | 40nC @ 10V | ±20V | 1750pF @ 50V | - | 144W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 80A TO220-3-1 |
4.662 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 3.7mOhm @ 80A, 10V | 4V @ 53µA | 66nC @ 10V | ±20V | 5260pF @ 25V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 80V 90A TO252-3 |
5.562 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 90A (Tc) | 6V, 10V | 4.6mOhm @ 45A, 10V | 3.8V @ 65µA | 53nC @ 10V | ±20V | 3800pF @ 40V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 43A TO262-3 |
2.124 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 43A (Tc) | 6V, 10V | 18mOhm @ 33A, 10V | 3.5V @ 33µA | 25nC @ 10V | ±20V | 1800pF @ 50V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 600V 120MA SOT223 |
5.346 |
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SIPMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 120mA (Ta) | 0V, 10V | 45Ohm @ 120mA, 10V | 1V @ 94µA | 4.9nC @ 5V | ±20V | 146pF @ 25V | Depletion Mode | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
TRANSISTOR N-CH |
7.092 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |