Infineon Technologies Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
ProduttoreInfineon Technologies
Record 720
Pagina 24/24
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
RECTIFIER DIODE MOD 2000V 1150A |
5.868 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
DIODE GEN PURP 3.6KV 700A MODULE |
5.742 |
|
- | Standard | 3600V | 700A | 1.71V @ 1200A | Standard Recovery >500ns, > 200mA (Io) | - | 50mA @ 3600V | - | Chassis Mount | Module | Module | -40°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 600V 12A TO252-3 |
4.806 |
|
CoolSiC™+ | Silicon Carbide Schottky | 600V | 12A (DC) | 2.1V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 600V | 310pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP D10026K-1 |
5.256 |
|
- | Standard | - | 1720A | - | Standard Recovery >500ns, > 200mA (Io) | - | 200mA @ 4500V | - | Chassis Mount | DO-200AD | BG-D10026K-1 | -40°C ~ 140°C |
|
|
|
Infineon Technologies |
DIODE GP 4870A BG-D12035K-1 |
8.082 |
|
- | Standard | - | 4870A | - | Standard Recovery >500ns, > 200mA (Io) | - | 100mA @ 4200V | - | Chassis Mount | DO-200AE | BG-D12035K-1 | -40°C ~ 160°C |
|
|
|
Infineon Technologies |
DIODE GP 1.4KV 261A BG-PB50ND-1 |
4.932 |
|
- | Standard | 1400V | 261A | - | Standard Recovery >500ns, > 200mA (Io) | - | 200mA @ 1400V | - | Chassis Mount | Module | BG-PB50ND-1 | -40°C ~ 135°C |
|
|
|
Infineon Technologies |
DIODE GP 1KV 261A BG-PB50ND-1 |
2.160 |
|
- | Standard | 1000V | 261A | - | Standard Recovery >500ns, > 200mA (Io) | - | 200mA @ 1000V | - | Chassis Mount | Module | BG-PB50ND-1 | -40°C ~ 135°C |
|
|
|
Infineon Technologies |
DIODE GP 2KV 260A BG-PB50ND-1 |
4.734 |
|
- | Standard | 2000V | 260A | - | Standard Recovery >500ns, > 200mA (Io) | - | 40mA @ 2000V | - | Chassis Mount | Module | BG-PB50ND-1 | -40°C ~ 135°C |
|
|
|
Infineon Technologies |
DIODE GP 2.2KV 260A BG-PB50ND-1 |
8.928 |
|
- | Standard | 2200V | 260A | - | Standard Recovery >500ns, > 200mA (Io) | - | 40mA @ 2200V | - | Chassis Mount | Module | BG-PB50ND-1 | -40°C ~ 135°C |
|
|
|
Infineon Technologies |
MOD DIODE RECTIFIER DSW27 |
6.030 |
|
- | Standard | 400V | 255A | - | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Stud Mount | - | BG-DSW27-1 | 180°C (Max) |
|
|
|
Infineon Technologies |
MOD DIODE RECTIFIER M24 |
2.142 |
|
- | Standard | 1200V | 400A | - | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Stud Mount | - | BG-DSW41-1 | 180°C (Max) |
|
|
|
Infineon Technologies |
THYR / DIODE MODULE DK |
8.928 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
THYR / DIODE MODULE DK |
5.148 |
|
- | Standard | 1800V | 735A | - | Standard Recovery >500ns, > 200mA (Io) | - | 40mA @ 1800V | - | Chassis Mount | Module | BG-PB501-1 | 150°C (Max) |
|
|
|
Infineon Technologies |
DIODE MODULE |
5.346 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
DIODE MODULE |
6.282 |
|
- | Standard | 4500V | 1710A | - | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Chassis Mount | DO-200AE | BG-D10026K-1 | - |
|
|
|
Infineon Technologies |
DIODE MODULE |
3.852 |
|
- | Standard | 2200V | 6010A | 1V @ 4000A | Standard Recovery >500ns, > 200mA (Io) | - | 200mA @ 2200V | - | Chassis Mount | DO-200AE | BG-D12035K-1 | -40°C ~ 160°C |
|
|
|
Infineon Technologies |
DIODE MODULE |
5.184 |
|
- | Standard | 5000V | 8010A | 1.3V @ 6000A | Standard Recovery >500ns, > 200mA (Io) | - | 400mA @ 5000V | - | Chassis Mount | DO-200AE | BG-D15026K-1 | -40°C ~ 160°C |
|
|
|
Infineon Technologies |
DIODE RECT FAST BG-DSW272-1 |
5.058 |
|
- | Standard | 4500V | 102A | 4.5V @ 320A | Standard Recovery >500ns, > 200mA (Io) | 3.3µs | 5mA @ 4500V | - | Stud Mount | - | BG-DSW272-1 | 125°C (Max) |
|
|
|
Infineon Technologies |
DIODE E-EUPEC-0 |
2.502 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
DIODE E-EUPEC-0 |
8.982 |
|
- | Standard | 600V | 6400A | 1.15V @ 10000A | Standard Recovery >500ns, > 200mA (Io) | - | 100mA @ 600V | - | Chassis Mount | DO-200AB, B-PUK | E-EUPEC-0 | 180°C (Max) |
|
|
|
Infineon Technologies |
DIODE BG-D5726K-1 |
6.966 |
|
- | Standard | 2200V | 1030A | 1.11V @ 1000A | Standard Recovery >500ns, > 200mA (Io) | - | 40mA @ 2200V | - | Chassis Mount | DO-200AB, B-PUK | BG-D5726K-1 | 160°C (Max) |
|
|
|
Infineon Technologies |
DIODE BG-PB501-1 |
5.688 |
|
- | Standard | 1400V | 735A | 1.4V @ 2200A | Standard Recovery >500ns, > 200mA (Io) | - | 40mA @ 1400V | - | Chassis Mount | Module | BG-PB501-1 | 150°C (Max) |
|
|
|
Infineon Technologies |
DIODE BG-PB34-1 |
3.690 |
|
- | Standard | 800V | 171A | 1.26V @ 500A | Standard Recovery >500ns, > 200mA (Io) | - | 20mA @ 800V | - | Chassis Mount | Module | BG-PB34-1 | 150°C (Max) |
|
|
|
Infineon Technologies |
DIODE BG-PB50ND-1 |
5.148 |
|
- | Standard | 800V | 260A | 1.32V @ 800A | Standard Recovery >500ns, > 200mA (Io) | - | 30mA @ 800V | - | Chassis Mount | Module | BG-PB50ND-1 | 150°C (Max) |
|
|
|
Infineon Technologies |
DIODE G-PB70ECO-1 |
2.088 |
|
- | - | - | - | - | - | - | - | - | Chassis Mount | Module | - | - |
|
|
|
Infineon Technologies |
DIODE GEN PURP 600V TO252-3 |
8.676 |
|
- | Standard | 600V | 29.2A (DC) | 2V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 87ns | 50µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | -40°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP BG-DSW271-1 |
3.438 |
|
- | Standard | 2500V | 255A | 2.3V @ 800A | Standard Recovery >500ns, > 200mA (Io) | 4µs | 5mA @ 2500V | - | Stud Mount | DO-205AA, DO-8, Stud | - | 140°C (Max) |
|
|
|
Infineon Technologies |
DIODE GEN PURP BG-DSW272-1 |
8.676 |
|
- | Standard | 4500V | 102A | 4.5V @ 320A | Standard Recovery >500ns, > 200mA (Io) | 3.3µs | 5mA @ 4500V | - | Stud Mount | DO-205AA, DO-8, Stud | - | 125°C (Max) |
|
|
|
Infineon Technologies |
DIODE GEN PURP BG-D5726K-1 |
5.904 |
|
- | Standard | 2600V | 690A | 2.7V @ 3000A | Standard Recovery >500ns, > 200mA (Io) | 9µs | 25mA @ 2600V | - | Chassis Mount | DO-200AB, B-PUK | - | 150°C (Max) |
|
|
|
Infineon Technologies |
DIODE GEN PURP BG-D7514-1 |
3.654 |
|
- | Standard | 4500V | 1080A | 3.5V @ 2500A | Standard Recovery >500ns, > 200mA (Io) | - | 140mA @ 4500V | - | Chassis Mount | DO-200AC, K-PUK | - | 125°C (Max) |