Infineon Technologies Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
ProduttoreInfineon Technologies
Record 720
Pagina 2/24
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 4A TO220-2-1 |
57.618 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 4A (DC) | 1.7V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 70µA @ 650V | 130pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 650V 40A TO220-2 |
13.722 |
|
- | Standard | 650V | 40A | 2.3V @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 40µA @ 650V | - | Through Hole | TO-220-2 | TO-220-2 | -40°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 600V 15A TO247AC |
23.856 |
|
HEXFRED® | Standard | 600V | 15A | 1.7V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 10µA @ 600V | - | Through Hole | TO-247-2 | TO-247AC Modified | -55°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 6A TO220-2-1 |
20.664 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 6A (DC) | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 110µA @ 650V | 190pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 20A TO220-2 |
7.896 |
|
- | Silicon Carbide Schottky | 650V | 20A (DC) | 1.35V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 27µA @ 420V | 401pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 8A TO220-2-1 |
9.684 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 8A (DC) | 1.7V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 140µA @ 650V | 250pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 650V 150A TO247-3 |
17.004 |
|
- | Standard | 650V | 150A (DC) | 1.7V @ 75A | Fast Recovery =< 500ns, > 200mA (Io) | 108ns | 40µA @ 650V | - | Through Hole | TO-247-3 | PG-TO247-3 | -40°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 600V 150A TO247-3 |
8.076 |
|
- | Standard | 600V | 150A (DC) | 2V @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | 40µA @ 600V | - | Through Hole | TO-247-3 | PG-TO247-3 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTKY 650V 12A TO220-2-1 |
12.252 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 12A (DC) | 1.7V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 190µA @ 650V | 360pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 12A TO247-3 |
214 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 12A (DC) | 1.7V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 190µA @ 650V | 360pF @ 1V, 1MHz | Through Hole | TO-247-3 | PG-TO247-3 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 34A TO220-2 |
307 |
|
- | Silicon Carbide Schottky | 650V | 34A (DC) | 1.35V @ 16A | No Recovery Time > 500mA (Io) | 0ns | 53µA @ 420V | 783pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 1200V 10A TO220-2 |
7.428 |
|
CoolSiC™+ | Silicon Carbide Schottky | 1200V | 10A (DC) | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 62µA @ 1200V | 525pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTKY 650V 16A TO220-2-1 |
23.940 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 16A (DC) | 1.7V @ 16A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 470pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 1.2KV 56A TO220-2 |
14.610 |
|
CoolSiC™+ | Silicon Carbide Schottky | 1200V | 56A (DC) | 1.8V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 123µA @ 1200V | 1050pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 30A TO247-3 |
63 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 30A (DC) | 1.7V @ 30A | No Recovery Time > 500mA (Io) | 0ns | 220µA @ 650V | 860pF @ 1V, 1MHz | Through Hole | TO-247-3 | PG-TO247-3 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 40A TO247-3 |
6.930 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 40A (DC) | 1.7V @ 40A | No Recovery Time > 500mA (Io) | 0ns | 220µA @ 650V | 1140pF @ 1V, 1MHz | Through Hole | TO-247-3 | PG-TO247-3 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 100V 250MA SOT23 |
597.582 |
|
- | Standard | 100V | 250mA (DC) | 1.25V @ 150mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 100nA @ 75V | 2pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | 150°C (Max) |
|
|
|
Infineon Technologies |
DIODE GEN PURP 80V 200MA SC79-2 |
288.678 |
|
- | Standard | 80V | 200mA (DC) | 1.25V @ 150mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 1µA @ 75V | 2pF @ 0V, 1MHz | Surface Mount | SC-79, SOD-523 | PG-SC79-2 | 150°C (Max) |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 1200V 2A TO220-2 |
24.138 |
|
CoolSiC™+ | Silicon Carbide Schottky | 1200V | 2A (DC) | 1.65V @ 2A | No Recovery Time > 500mA (Io) | 0ns | 18µA @ 1200V | 182pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | 175°C (Max) |
|
|
|
Infineon Technologies |
DIODE GEN PURP 600V 120A TO247-3 |
7.524 |
|
- | Standard | 600V | 120A (DC) | 2V @ 75A | Fast Recovery =< 500ns, > 200mA (Io) | 121ns | 40µA @ 600V | - | Through Hole | TO-247-3 | PG-TO247-3 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 10A TO247-3 |
252 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 10A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 180µA @ 650V | 300pF @ 1V, 1MHz | Through Hole | TO-247-3 | PG-TO247-3 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 16A TO247-3 |
8.928 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 16A (DC) | 1.7V @ 16A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 470pF @ 1V, 1MHz | Through Hole | TO-247-3 | PG-TO247-3 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 1200V 16A TO220-2 |
8.868 |
|
CoolSiC™+ | Silicon Carbide Schottky | 1200V | 16A (DC) | 1.95V @ 16A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 1200V | 730pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 20A TO247-3 |
8.136 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 20A (DC) | 1.7V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 210µA @ 650V | 590pF @ 1V, 1MHz | Through Hole | TO-247-3 | PG-TO247-3-41 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 9A TO220-2-1 |
17.988 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 9A (DC) | 1.7V @ 9A | No Recovery Time > 500mA (Io) | 0ns | 160µA @ 650V | 270pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 1200V 8A TO220-2 |
8.328 |
|
CoolSiC™+ | Silicon Carbide Schottky | 1200V | 8A (DC) | 1.95V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 40µA @ 1200V | 365pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | -55°C ~ 175°C |
|
|
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Infineon Technologies |
DIODE SCHOTKY 650V 20A TO220-2-1 |
10.176 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 20A (DC) | 1.7V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 210µA @ 650V | 590pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 30V 200MA SC79-2 |
208.410 |
|
- | Schottky | 30V | 200mA (DC) | 800mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 2µA @ 25V | 10pF @ 1V, 1MHz | Surface Mount | SC-79, SOD-523 | PG-SC79-2 | 150°C (Max) |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 24A TO220-2 |
1.404 |
|
- | Silicon Carbide Schottky | 650V | 24A (DC) | 1.35V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 33µA @ 420V | 495pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 27A TO220-2 |
2.462 |
|
- | Silicon Carbide Schottky | 650V | 27A (DC) | 1.35V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 40µA @ 420V | 594pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2 | -55°C ~ 175°C |