Infineon Technologies Raddrizzatori - Singoli
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Mostra filtri
Ripristina filtri
Applica filtri
CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
ProduttoreInfineon Technologies
Record 720
Pagina 12/24
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
DIODE GEN PURP 4.2KV 4870A |
6.012 |
|
- | Standard | 4200V | 4870A | 1.27V @ 4000A | Standard Recovery >500ns, > 200mA (Io) | - | 100mA @ 4200V | - | Chassis Mount | DO-200AE | - | -40°C ~ 160°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 4.5KV 1740A |
4.842 |
|
- | Standard | 4500V | 1740A | 4.3V @ 2500A | Standard Recovery >500ns, > 200mA (Io) | - | 150mA @ 4500V | - | Chassis Mount | DO-200AE | - | 0°C ~ 140°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 4.5KV 1080A |
7.884 |
|
- | Standard | 4500V | 1080A | 3.5V @ 2500A | Standard Recovery >500ns, > 200mA (Io) | - | 140mA @ 4500V | - | Chassis Mount | DO-200AC, K-PUK | - | -40°C ~ 125°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 6.8KV 4090A |
5.742 |
|
- | Standard | 6800V | 4090A | 1.7V @ 4000A | Standard Recovery >500ns, > 200mA (Io) | - | 100mA @ 6800V | - | Chassis Mount | DO-200AE | - | -40°C ~ 160°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 4.5KV 1710A |
4.446 |
|
- | Standard | 4500V | 1710A | 4.2V @ 2500A | Standard Recovery >500ns, > 200mA (Io) | - | 150mA @ 4500V | - | Chassis Mount | DO-200AE | - | 0°C ~ 140°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 9KV 1790A |
3.582 |
|
- | Standard | 9000V | 1790A | 5.5V @ 4000A | Standard Recovery >500ns, > 200mA (Io) | - | 150mA @ 9000V | - | Chassis Mount | DO-200AE | - | 0°C ~ 140°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 4.5KV 1630A |
4.968 |
|
- | Standard | 4500V | 1630A | 2.6V @ 2500A | Standard Recovery >500ns, > 200mA (Io) | - | 100mA @ 4500V | - | Chassis Mount | DO-200AD | - | -40°C ~ 140°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 6.8KV 3910A |
8.910 |
|
- | Standard | 6800V | 3910A | 1.7V @ 4000A | Standard Recovery >500ns, > 200mA (Io) | - | 100mA @ 6800V | - | Chassis Mount | DO-200AE | - | -40°C ~ 160°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 8.5KV 3040A |
6.822 |
|
- | Standard | 8500V | 3040A | - | Standard Recovery >500ns, > 200mA (Io) | - | 100mA @ 8500V | - | Chassis Mount | DO-200AE | - | -40°C ~ 160°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 9KV 3040A |
5.256 |
|
- | Standard | 9000V | 3040A | - | Standard Recovery >500ns, > 200mA (Io) | - | 100mA @ 9000V | - | Chassis Mount | DO-200AE | - | -40°C ~ 160°C |
|
|
|
Infineon Technologies |
HIGH POWER THYR / DIO |
2.142 |
|
- | Standard | 4200V | 4870A | - | Standard Recovery >500ns, > 200mA (Io) | - | 100mA @ 4200V | - | Chassis Mount | DO-200AE | BG-D12035K-1 | 160°C (Max) |
|
|
|
Infineon Technologies |
DIODE GEN PURP 4.5KV 2380A |
5.148 |
|
- | Standard | 4500V | 2380A | 2.5V @ 2500A | Standard Recovery >500ns, > 200mA (Io) | - | 150mA @ 4500V | - | Chassis Mount | DO-200AE | - | 0°C ~ 140°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 4.5KV 1530A |
7.902 |
|
- | Standard | 4500V | 1530A | 2.5V @ 2500A | Standard Recovery >500ns, > 200mA (Io) | - | 80mA @ 4500V | - | Chassis Mount | DO-200AC, K-PUK | - | -40°C ~ 140°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 4.5KV 2210A |
4.734 |
|
- | Standard | 4500V | 2210A | 3.6V @ 2500A | Standard Recovery >500ns, > 200mA (Io) | - | 150mA @ 4500V | - | Chassis Mount | DO-200AE | - | 0°C ~ 140°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 4.5KV 1630A |
5.454 |
|
- | Standard | 4500V | 1630A | 2.6V @ 2500A | Standard Recovery >500ns, > 200mA (Io) | - | 100mA @ 4500V | - | Chassis Mount | DO-200AD | - | -40°C ~ 140°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP D10026K-1 |
5.094 |
|
- | Standard | - | 1720A | - | Standard Recovery >500ns, > 200mA (Io) | - | 200mA @ 4500V | - | Chassis Mount | DO-200AD | BG-D10026K-1 | -40°C ~ 140°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP D12026K-1 |
4.500 |
|
- | Standard | - | 2160A | - | Standard Recovery >500ns, > 200mA (Io) | - | 150mA @ 9000V | - | Chassis Mount | DO-200AE | BG-D10026K-1 | 0°C ~ 140°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 5KV 8010A |
4.194 |
|
- | Standard | 5000V | 8010A | 1.3V @ 6000A | Standard Recovery >500ns, > 200mA (Io) | - | 400mA @ 5000V | - | Chassis Mount | DO-200AE | - | -40°C ~ 160°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 400V 1A SOT89 |
7.128 |
|
- | Standard | 400V | 1A (DC) | 1.6V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1µs | 1µA @ 400V | 10pF @ 0V, 1MHz | Surface Mount | TO-243AA | PG-SOT89 | 150°C (Max) |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 600V 6A TO220AB |
8.946 |
|
- | Silicon Carbide Schottky | 600V | 6A (DC) | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 600V | 300pF @ 0V, 1MHz | Through Hole | TO-220-3 | P-TO220AB | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 600V 4A TO220-2 |
2.484 |
|
CoolSiC™+ | Silicon Carbide Schottky | 600V | 4A (DC) | 1.9V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 600V | 150pF @ 0V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 600V 6A TO220-2 |
3.436 |
|
CoolSiC™+ | Silicon Carbide Schottky | 600V | 6A (DC) | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 600V | 300pF @ 0V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 300V 10A TO220-2 |
3.402 |
|
CoolSiC™+ | Silicon Carbide Schottky | 300V | 10A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 300V | 600pF @ 0V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 600V 12A TO220-2 |
8.028 |
|
CoolSiC™+ | Silicon Carbide Schottky | 600V | 12A (DC) | 1.7V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 400µA @ 600V | 450pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 80V 200MA SC79-2 |
8.694 |
|
- | Standard | 80V | 200mA (DC) | 1.25V @ 150mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 1µA @ 75V | 2pF @ 0V, 1MHz | Surface Mount | SC-79, SOD-523 | PG-SC79-2 | 150°C (Max) |
|
|
|
Infineon Technologies |
DIODE GEN PURP 80V 200MA SCD80-2 |
5.166 |
|
- | Standard | 80V | 200mA (DC) | 1.25V @ 150mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 1µA @ 75V | 2pF @ 0V, 1MHz | Surface Mount | SC-80 | SCD-80 | 150°C (Max) |
|
|
|
Infineon Technologies |
DIODE GEN PURP 80V 250MA SOT323 |
7.434 |
|
- | Standard | 80V | 250mA (DC) | 1.25V @ 150mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 1µA @ 75V | 2pF @ 0V, 1MHz | Surface Mount | SC-70, SOT-323 | PG-SOT323-3 | 150°C (Max) |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 45V 750MA SC79-2 |
8.712 |
|
- | Schottky | 45V | 750mA (DC) | 600mV @ 200mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 45V | 10pF @ 10V, 1MHz | Surface Mount | SC-79, SOD-523 | PG-SC79-2 | 150°C (Max) |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 45V 750MA SC79-2 |
6.786 |
|
- | Schottky | 45V | 750mA (DC) | 600mV @ 200mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 45V | 10pF @ 10V, 1MHz | Surface Mount | SC-79, SOD-523 | PG-SC79-2 | 150°C (Max) |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 70V 70MA SCD80-2 |
6.462 |
|
- | Schottky | 70V | 70mA (DC) | 1V @ 15mA | Small Signal =< 200mA (Io), Any Speed | 100ps | 100nA @ 50V | 2pF @ 0V, 1MHz | Surface Mount | SC-80 | SCD-80 | -55°C ~ 125°C |