GeneSiC Semiconductor Raddrizzatori - Array
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Mostra filtri
Ripristina filtri
Applica filtri
CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Array
ProduttoreGeneSiC Semiconductor
Record 906
Pagina 14/31
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Configurazione diodi | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media rettificata (Io) (per diodo) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Temperatura di esercizio - Giunzione | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GeneSiC Semiconductor |
DIODE MODULE 100V 100A 3TOWER |
4.680 |
|
- | 1 Pair Common Anode | Standard | 100V | 100A (DC) | 1.3V @ 50A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 25µA @ 50V | - | Chassis Mount | Three Tower | Three Tower |
|
|
|
GeneSiC Semiconductor |
DIODE ARRAY GP 200V 100A 3TOWER |
101 |
|
- | - | Standard | 200V | 100A (DC) | 1.3V @ 50A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 25µA @ 50V | -40°C ~ 175°C | Chassis Mount | Three Tower | Three Tower |
|
|
|
GeneSiC Semiconductor |
DIODE ARRAY GP REV POLAR 3TOWER |
8.208 |
|
- | - | Standard, Reverse Polarity | 200V | 100A (DC) | 1.3V @ 50A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 25µA @ 50V | -40°C ~ 175°C | Chassis Mount | Three Tower | Three Tower |
|
|
|
GeneSiC Semiconductor |
DIODE ARRAY GP 400V 100A 3TOWER |
7.326 |
|
- | - | Standard | 400V | 100A (DC) | 1.35V @ 50A | Fast Recovery =< 500ns, > 200mA (Io) | 90ns | 25µA @ 50V | -40°C ~ 175°C | Chassis Mount | Three Tower | Three Tower |
|
|
|
GeneSiC Semiconductor |
DIODE ARRAY GP REV POLAR3TOWER |
8.568 |
|
- | - | Standard, Reverse Polarity | 400V | 100A (DC) | 1.35V @ 50A | Fast Recovery =< 500ns, > 200mA (Io) | 90ns | 25µA @ 50V | -40°C ~ 175°C | Chassis Mount | Three Tower | Three Tower |
|
|
|
GeneSiC Semiconductor |
DIODE ARRAY GP 600V 100A 3TOWER |
3.598 |
|
- | - | Standard | 600V | 100A (DC) | 1.7V @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 25µA @ 50V | -40°C ~ 175°C | Chassis Mount | Three Tower | Three Tower |
|
|
|
GeneSiC Semiconductor |
DIODE ARRAY GP REV POLAR 3TOWER |
3.402 |
|
- | - | Standard, Reverse Polarity | 600V | 100A (DC) | 1.7V @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 25µA @ 50V | -40°C ~ 175°C | Chassis Mount | Three Tower | Three Tower |
|
|
|
GeneSiC Semiconductor |
DIODE MODULE 35V 400A 2TOWER |
3.654 |
|
- | 1 Pair Common Anode | Schottky, Reverse Polarity | 35V | 400A (DC) | 700mV @ 200A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 35V | -55°C ~ 150°C | Chassis Mount | Twin Tower | Twin Tower |
|
|
|
GeneSiC Semiconductor |
DIODE MODULE 50V 400A 2TOWER |
2.268 |
|
- | 1 Pair Common Cathode | Standard | 50V | 400A (DC) | 1.3V @ 125A | Fast Recovery =< 500ns, > 200mA (Io) | 90ns | 25µA @ 50V | -55°C ~ 150°C | Chassis Mount | Twin Tower | Twin Tower |
|
|
|
GeneSiC Semiconductor |
DIODE MODULE 50V 400A 2TOWER |
3.942 |
|
- | 1 Pair Common Anode | Standard | 50V | 400A (DC) | 1.3V @ 125A | Fast Recovery =< 500ns, > 200mA (Io) | 90ns | 25µA @ 50V | -55°C ~ 150°C | Chassis Mount | Twin Tower | Twin Tower |
|
|
|
GeneSiC Semiconductor |
DIODE MODULE 100V 400A 2TOWER |
2.628 |
|
- | 1 Pair Common Cathode | Standard | 100V | 400A (DC) | 1.3V @ 125A | Fast Recovery =< 500ns, > 200mA (Io) | 90ns | 25µA @ 50V | - | Chassis Mount | Twin Tower | Twin Tower |
|
|
|
GeneSiC Semiconductor |
DIODE MODULE 100V 400A 2TOWER |
5.976 |
|
- | 1 Pair Common Anode | Standard | 100V | 400A (DC) | 1.3V @ 125A | Fast Recovery =< 500ns, > 200mA (Io) | 90ns | 25µA @ 50V | -55°C ~ 150°C | Chassis Mount | Twin Tower | Twin Tower |
|
|
|
GeneSiC Semiconductor |
DIODE MODULE 200V 400A 2TOWER |
4.032 |
|
- | 1 Pair Common Cathode | Standard | 200V | 400A (DC) | 1.3V @ 125A | Fast Recovery =< 500ns, > 200mA (Io) | 90ns | 25µA @ 50V | -55°C ~ 150°C | Chassis Mount | Twin Tower | Twin Tower |
|
|
|
GeneSiC Semiconductor |
DIODE MODULE 200V 400A 2TOWER |
4.050 |
|
- | 1 Pair Common Anode | Standard | 200V | 400A (DC) | 1.3V @ 125A | Fast Recovery =< 500ns, > 200mA (Io) | 90ns | 25µA @ 50V | -55°C ~ 150°C | Chassis Mount | Twin Tower | Twin Tower |
|
|
|
GeneSiC Semiconductor |
DIODE MODULE 400V 400A 2TOWER |
3.906 |
|
- | 1 Pair Common Cathode | Standard | 400V | 400A (DC) | 1.3V @ 125A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 25µA @ 50V | -55°C ~ 150°C | Chassis Mount | Twin Tower | Twin Tower |
|
|
|
GeneSiC Semiconductor |
DIODE MODULE 400V 400A 2TOWER |
8.370 |
|
- | 1 Pair Common Anode | Standard | 400V | 400A (DC) | 1.3V @ 125A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 25µA @ 50V | -55°C ~ 150°C | Chassis Mount | Twin Tower | Twin Tower |
|
|
|
GeneSiC Semiconductor |
DIODE MODULE 600V 400A 2TOWER |
6.102 |
|
- | 1 Pair Common Cathode | Standard | 600V | 400A (DC) | 1.3V @ 125A | Fast Recovery =< 500ns, > 200mA (Io) | 180ns | 25µA @ 50V | -55°C ~ 150°C | Chassis Mount | Twin Tower | Twin Tower |
|
|
|
GeneSiC Semiconductor |
DIODE MODULE 600V 400A 2TOWER |
6.192 |
|
- | 1 Pair Common Anode | Standard | 600V | 400A (DC) | 1.3V @ 125A | Fast Recovery =< 500ns, > 200mA (Io) | 180ns | 25µA @ 50V | -55°C ~ 150°C | Chassis Mount | Twin Tower | Twin Tower |
|
|
|
GeneSiC Semiconductor |
DIODE MODULE 50V 200A 3TOWER |
2.574 |
|
- | 1 Pair Common Cathode | Standard | 50V | 200A (DC) | 1.3V @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 25µA @ 50V | - | Chassis Mount | Three Tower | Three Tower |
|
|
|
GeneSiC Semiconductor |
DIODE MODULE 50V 200A 3TOWER |
4.806 |
|
- | 1 Pair Common Anode | Standard | 50V | 200A (DC) | 1.3V @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 25µA @ 50V | - | Chassis Mount | Three Tower | Three Tower |
|
|
|
GeneSiC Semiconductor |
DIODE MODULE 100V 200A 3TOWER |
6.084 |
|
- | 1 Pair Common Cathode | Standard | 100V | 200A (DC) | 1.3V @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 25µA @ 50V | - | Chassis Mount | Three Tower | Three Tower |
|
|
|
GeneSiC Semiconductor |
DIODE MODULE 100V 200A 3TOWER |
4.230 |
|
- | 1 Pair Common Anode | Standard | 100V | 200A (DC) | 1.3V @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 25µA @ 50V | - | Chassis Mount | Three Tower | Three Tower |
|
|
|
GeneSiC Semiconductor |
DIODE MODULE 200V 200A 3TOWER |
6.030 |
|
- | 1 Pair Common Cathode | Standard | 200V | 200A (DC) | 1.3V @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 25µA @ 50V | - | Chassis Mount | Three Tower | Three Tower |
|
|
|
GeneSiC Semiconductor |
DIODE MODULE 200A 3TOWER |
6.480 |
|
- | 1 Pair Common Anode | Standard | 200V | 200A (DC) | 1.3V @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 25µA @ 50V | - | Chassis Mount | Three Tower | Three Tower |
|
|
|
GeneSiC Semiconductor |
DIODE MODULE 400V 200A 3TOWER |
7.704 |
|
- | 1 Pair Common Cathode | Standard | 400V | 200A (DC) | 1.35V @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | 90ns | 25µA @ 50V | - | Chassis Mount | Three Tower | Three Tower |
|
|
|
GeneSiC Semiconductor |
DIODE MODULE 400V 200A 3TOWER |
7.164 |
|
- | 1 Pair Common Anode | Standard | 400V | 200A (DC) | 1.35V @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | 90ns | 25µA @ 50V | - | Chassis Mount | Three Tower | Three Tower |
|
|
|
GeneSiC Semiconductor |
DIODE MODULE 600V 200A 3TOWER |
3.546 |
|
- | 1 Pair Common Cathode | Standard | 600V | 200A (DC) | 1.7V @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | 160ns | 25µA @ 50V | - | Chassis Mount | Three Tower | Three Tower |
|
|
|
GeneSiC Semiconductor |
DIODE MODULE 600V 200A 3TOWER |
5.328 |
|
- | 1 Pair Common Anode | Standard | 600V | 200A (DC) | 1.7V @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | 160ns | 25µA @ 50V | - | Chassis Mount | Three Tower | Three Tower |
|
|
|
GeneSiC Semiconductor |
DIODE MODULE 40V 300A 2TOWER |
5.580 |
|
- | 1 Pair Common Cathode | Schottky | 40V | 300A | 750mV @ 300A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | -55°C ~ 150°C | Chassis Mount | Twin Tower | Twin Tower |
|
|
|
GeneSiC Semiconductor |
DIODE MODULE 100V 300A 2TOWER |
6.264 |
|
- | 1 Pair Common Cathode | Schottky | 100V | 300A | 880mV @ 300A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | - | Chassis Mount | Twin Tower | Twin Tower |