Cree/Wolfspeed Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
ProduttoreCree/Wolfspeed
Record 39
Pagina 1/2
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Cree/Wolfspeed |
MOSFET N-CH 900V 11.5A |
22.812 |
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C3M™ | N-Channel | SiCFET (Silicon Carbide) | 900V | 11.5A (Tc) | 15V | 360mOhm @ 7.5A, 15V | 3.5V @ 1.2mA | 9.5nC @ 15V | +18V, -8V | 150pF @ 600V | - | 54W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Cree/Wolfspeed |
MOSFET N-CH 1700V 4.9A TO247 |
135.762 |
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Z-FET™ | N-Channel | SiCFET (Silicon Carbide) | 1700V | 4.9A (Tc) | 20V | 1.1Ohm @ 2A, 20V | 2.4V @ 100µA | 13nC @ 20V | +25V, -10V | 191pF @ 1000V | - | 69W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Cree/Wolfspeed |
MOSFET N-CH 1200V 10A TO-247-3 |
157.680 |
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Z-FET™ | N-Channel | SiCFET (Silicon Carbide) | 1200V | 10A (Tc) | 20V | 370mOhm @ 6A, 20V | 2.8V @ 1.25mA (Typ) | 20.4nC @ 20V | +25V, -10V | 259pF @ 1000V | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Cree/Wolfspeed |
MOSFET N-CH 1700V 5.3A TO247 |
35.286 |
|
C2M™ | N-Channel | SiCFET (Silicon Carbide) | 1700V | 5.3A (Tc) | 20V | 1.4Ohm @ 2A, 20V | 3.1V @ 500µA (Typ) | 13nC @ 20V | +25V, -10V | 200pF @ 1000V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7 (Straight Leads) |
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Cree/Wolfspeed |
900V, 120 MOHM, G3 SIC MOSFET |
23.154 |
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C3M™ | N-Channel | SiCFET (Silicon Carbide) | 900V | 23A (Tc) | 15V | 155mOhm @ 15A, 15V | 3.5V @ 3mA | 17.3nC @ 15V | +18V, -8V | 350pF @ 600V | - | 97W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Cree/Wolfspeed |
MOSFET N-CH 900V 22A |
25.476 |
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C3M™ | N-Channel | SiCFET (Silicon Carbide) | 900V | 22A (Tc) | 15V | 155mOhm @ 15A, 15V | 3.5V @ 3mA | 17.3nC @ 15V | +18V, -8V | 350pF @ 600V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK-7 | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
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Cree/Wolfspeed |
MOSFET N-CH 1200V 19A TO-247 |
39.336 |
|
Z-FET™ | N-Channel | SiCFET (Silicon Carbide) | 1200V | 19A (Tc) | 20V | 196mOhm @ 10A, 20V | 2.5V @ 500µA | 32.6nC @ 20V | +25V, -10V | 527pF @ 800V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Cree/Wolfspeed |
MOSFET N-CH 1000V 22A D2PAK-7 |
18.252 |
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C3M™ | N-Channel | SiCFET (Silicon Carbide) | 1000V | 22A (Tc) | 15V | 155mOhm @ 15A, 15V | 3.5V @ 3mA | 21.5nC @ 15V | +15V, -4V | 350pF @ 600V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK-7 | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
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Cree/Wolfspeed |
MOSFET N-CH 900V 36A TO247-3 |
75.426 |
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C3M™ | N-Channel | SiCFET (Silicon Carbide) | 900V | 36A (Tc) | 15V | 78mOhm @ 20A, 15V | 2.1V @ 5mA | 30.4nC @ 15V | +18V, -8V | 660pF @ 600V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Cree/Wolfspeed |
MOSFET N-CH 900V 35A D2PAK-7 |
141.516 |
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C3M™ | N-Channel | SiCFET (Silicon Carbide) | 900V | 35A (Tc) | 15V | 78mOhm @ 20A, 15V | 2.1V @ 5mA | 30nC @ 15V | +19V, -8V | 660pF @ 600V | - | 113W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK-7 | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
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Cree/Wolfspeed |
1000V, 65 MOHM, G3 SIC MOSFET |
27.096 |
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C3M™ | N-Channel | SiCFET (Silicon Carbide) | 1000V | 35A (Tc) | 15V | 78mOhm @ 20A, 15V | 3.5V @ 5mA | 35nC @ 15V | +19V, -8V | 660pF @ 600V | - | 113.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-4L | TO-247-4 |
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Cree/Wolfspeed |
MOSFET N-CH 1000V 35A D2PAK-7 |
13.236 |
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C3M™ | N-Channel | SiCFET (Silicon Carbide) | 1000V | 35A (Tc) | 15V | 78mOhm @ 20A, 15V | 3.5V @ 5mA | 35nC @ 15V | +15V, -4V | 660pF @ 600V | - | 113.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK-7 | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
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Cree/Wolfspeed |
MOSFET N-CH 1200V 30A D2PAK-7 |
20.364 |
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C3M™ | N-Channel | SiCFET (Silicon Carbide) | 1200V | 30A (Tc) | 15V | 90mOhm @ 20A, 15V | 4V @ 5mA | 51nC @ 15V | +19V, -8V | 1350pF @ 1000V | - | 113.6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK-7 | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
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Cree/Wolfspeed |
MOSFET N-CH 1200V 30A TO247-4 |
19.980 |
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C3M™ | N-Channel | SiCFET (Silicon Carbide) | 1200V | 30A (Tc) | 15V | 90mOhm @ 20A, 15V | 4V @ 5mA | 51nC @ 15V | +19V, -8V | 1350pF @ 1000V | - | 113.6W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-4L | TO-247-4 |
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Cree/Wolfspeed |
MOSFET N-CH 1200V 31.6A TO247 |
879 |
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C2M™ | N-Channel | SiCFET (Silicon Carbide) | 1200V | 36A (Tc) | 20V | 98mOhm @ 20A, 20V | 4V @ 5mA | 62nC @ 5V | +25V, -10V | 950pF @ 1000V | - | 192W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Cree/Wolfspeed |
MOSFET 1200V, 75 MOHM, G3 SIC |
8.484 |
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C3M™ | N-Channel | SiCFET (Silicon Carbide) | 1200V | 30A (Tc) | 15V | 90mOhm @ 20A, 15V | 4V @ 5mA | 54nC @ 15V | +19V, -8V | 1350pF @ 1000V | - | 113.6W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Cree/Wolfspeed |
ZFET 900V, 30 MOHM, G3 SIC MOSFE |
7.584 |
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C3M™ | N-Channel | SiCFET (Silicon Carbide) | 900V | 63A (Tc) | 15V | 39mOhm @ 35A, 15V | 3.5V @ 11mA | 87nC @ 15V | +15V, -4V | 1864pF @ 600V | - | 149W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-4 | TO-247-4 |
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Cree/Wolfspeed |
MOSFET N-CH 1200V 60A TO-247 |
37.512 |
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Z-FET™ | N-Channel | SiCFET (Silicon Carbide) | 1200V | 60A (Tc) | 20V | 52mOhm @ 40A, 20V | 2.8V @ 10mA | 115nC @ 20V | +25V, -10V | 1893pF @ 1000V | - | 330W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Cree/Wolfspeed |
ZFET SIC DMOSFET, 1700V VDS, RDS |
8.052 |
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C2M™ | N-Channel | SiCFET (Silicon Carbide) | 1700V | 40A (Tc) | 20V | 125mOhm @ 28A, 20V | 4V @ 10mA | 120nC @ 20V | +25V, -10V | 2250pF @ 1000V | - | 277W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-4 | TO-247-4 |
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Cree/Wolfspeed |
MOSFET N-CH 1200V 90A TO-247 |
14.382 |
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Z-FET™ | N-Channel | SiCFET (Silicon Carbide) | 1200V | 90A (Tc) | 20V | 34mOhm @ 50A, 20V | 2.4V @ 10mA | 161nC @ 20V | +25V, -10V | 2788pF @ 1000V | - | 463W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Cree/Wolfspeed |
ZFET SIC DMOSFET, 1700V VDS, RDS |
11.112 |
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C2M™ | N-Channel | SiCFET (Silicon Carbide) | 1700V | 72A (Tc) | 20V | 59mOhm @ 50A, 20V | 4V @ 18mA | 188nC @ 20V | +25V, -10V | 3672pF @ 1000V | - | 520W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | TO-247-4 | TO-247-4 |
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Cree/Wolfspeed |
MOSFET NCH 1.7KV 72A TO247 |
19.008 |
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C2M™ | N-Channel | SiCFET (Silicon Carbide) | 1700V | 72A (Tc) | 20V | 70mOhm @ 50A, 20V | 4V @ 18mA | 188nC @ 20V | +25V, -10V | 3672pF @ 1kV | - | 520W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Cree/Wolfspeed |
SIC MOSFET G3 1200V 16 MOHM |
10.008 |
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C3M™ | N-Channel | SiCFET (Silicon Carbide) | 1.2kV | 115A (Tc) | 15V | 22.3mOhm @ 75A, 15V | 3.6V @ 23mA | 211nC @ 15V | +15V, -4V | 6085pF @ 1000V | - | 556W (Tc) | -40°C ~ 175°C (TJ) | Through Hole | TO-247-4 | TO-247-4 |
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Cree/Wolfspeed |
MOSFET N-CH 900V 11A |
16.776 |
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C3M™ | N-Channel | SiCFET (Silicon Carbide) | 900V | 11A (Tc) | 15V | 360mOhm @ 7.5A, 15V | 3.5V @ 1.2mA | 9.5nC @ 15V | +18V, -8V | 150pF @ 600V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK-7 | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
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Cree/Wolfspeed |
MOSFET N-CH 900V 22A |
17.316 |
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C3M™ | N-Channel | SiCFET (Silicon Carbide) | 900V | 22A (Tc) | 15V | 155mOhm @ 15A, 15V | 3.5V @ 3mA | 17.3nC @ 15V | +18V, -8V | 350pF @ 600V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK-7 | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
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Cree/Wolfspeed |
MOSFET N-CH 1000V 22A TO247-4L |
7.656 |
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C3M™ | N-Channel | SiCFET (Silicon Carbide) | 1000V | 22A (Tc) | 15V | 155mOhm @ 15A, 15V | 3.5V @ 3mA | 21.5nC @ 15V | ±15V | 350pF @ 600V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-4L | TO-247-4 |
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Cree/Wolfspeed |
MOSFET N-CH 900V 11A |
19.056 |
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C3M™ | N-Channel | SiCFET (Silicon Carbide) | 900V | 11A (Tc) | 15V | 360mOhm @ 7.5A, 15V | 3.5V @ 1.2mA | 9.5nC @ 15V | +18V, -8V | 150pF @ 600V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK-7 | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
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Cree/Wolfspeed |
E-SERIES 900V, 280 MOHM, G3 SIC |
14.268 |
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Automotive, AEC-Q101, E | N-Channel | SiCFET (Silicon Carbide) | 900V | 11.5A (Tc) | 15V | 360mOhm @ 7.5A, 15V | 3.5V @ 1.2mA | 9.5nC @ 15V | +18V, -8V | 150pF @ 600V | - | 54W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Cree/Wolfspeed |
E-SERIES 900V, 120 MOHM, G3 SIC |
18.552 |
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Automotive, AEC-Q101, E | N-Channel | SiCFET (Silicon Carbide) | 900V | 23A (Tc) | 15V | 155mOhm @ 15A, 15V | 3.5V @ 3mA | 17.3nC @ 15V | +18V, -8V | 350pF @ 600V | - | 97W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Cree/Wolfspeed |
E-SERIES 900V, 65 MOHM, G3 SIC M |
16.920 |
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Automotive, AEC-Q101, E | N-Channel | SiCFET (Silicon Carbide) | 900V | 35A (Tc) | 15V | 84.5mOhm @ 20A, 15V | 3.5V @ 5mA | 30.4nC @ 15V | +18V, -8V | 660pF @ 600V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |