Vishay Semiconductor Diodes Division Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
ProduttoreVishay Semiconductor Diodes Division
Record 11.281
Pagina 288/377
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 5A DO201AD |
8.856 |
|
- | Standard | 200V | 5A | 1.35V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 10µA @ 200V | 28pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | 125°C (Max) |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.4KV 500MA DO204 |
2.808 |
|
- | Standard | 1400V | 500mA | - | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.6KV 500MA DO204 |
6.480 |
|
- | Standard | 1600V | 500mA | - | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A DO204AL |
4.824 |
|
- | Standard | 200V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 3µs | 5µA @ 200V | 884pF @ 1V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1A DO204AL |
5.418 |
|
- | Standard | 400V | 1A | - | Standard Recovery >500ns, > 200mA (Io) | 3µs | 5µA @ 200V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1A DO204AL |
2.232 |
|
- | Standard | 600V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 3µs | 5µA @ 200V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 1A DO204AL |
2.736 |
|
- | Standard | 800V | 1A | - | Standard Recovery >500ns, > 200mA (Io) | 3µs | 5µA @ 200V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 1A DO204AL |
3.330 |
|
- | Standard | 1000V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 3µs | 5µA @ 200V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A DO204AL |
2.844 |
|
- | Standard | 200V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 200V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1A DO204AL |
3.528 |
|
- | Standard | 400V | 1A | 1.3V @ 1A | Small Signal =< 200mA (Io), Any Speed | 150ns | 5µA @ 400V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1A DO204AL |
7.002 |
|
- | Standard | 600V | 1A | - | Standard Recovery >500ns, > 200mA (Io) | 250ns | 5µA @ 600V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 1A DO204AL |
6.804 |
|
- | Standard | 800V | 1A | 1.3V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 300ns | 5µA @ 800V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 1A DO204AL |
4.140 |
|
- | Standard | 1000V | 1A | 1.3V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 300ns | 5µA @ 1000V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 500MA DO213 |
2.808 |
|
SUPERECTIFIER® | Standard | 100V | 500mA | 1.25V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 100V | 7pF @ 4V, 1MHz | Surface Mount | DO-213AA (Glass) | DO-213AA (GL34) | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 500MA DO213 |
6.714 |
|
SUPERECTIFIER® | Standard | 200V | 500mA | 1.25V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 200V | 7pF @ 4V, 1MHz | Surface Mount | DO-213AA (Glass) | DO-213AA (GL34) | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 300V 500MA DO213 |
6.138 |
|
SUPERECTIFIER® | Standard | 300V | 500mA | 1.35V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 300V | 7pF @ 4V, 1MHz | Surface Mount | DO-213AA (Glass) | DO-213AA (GL34) | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 500MA DO213 |
5.994 |
|
SUPERECTIFIER® | Standard | 400V | 500mA | 1.35V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 400V | 7pF @ 4V, 1MHz | Surface Mount | DO-213AA (Glass) | DO-213AA (GL34) | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 500MA DO213AA |
6.066 |
|
SUPERECTIFIER® | Standard | 50V | 500mA | 1.25V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 50V | 7pF @ 4V, 1MHz | Surface Mount | DO-213AA (Glass) | DO-213AA (GL34) | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 1A DO213AB |
4.860 |
|
SUPERECTIFIER® | Standard | 1000V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 5µA @ 1000V | 15pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 1A DO213AB |
2.808 |
|
SUPERECTIFIER® | Standard | 800V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 5µA @ 800V | 15pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 1A DO213AB |
5.742 |
|
SUPERECTIFIER® | Standard | 100V | 1A | 1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 100V | 20pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 1A DO213AB |
8.604 |
|
SUPERECTIFIER® | Standard | 150V | 1A | 1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 150V | 20pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A DO213AB |
2.178 |
|
SUPERECTIFIER® | Standard | 200V | 1A | 1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 200V | 20pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 300V 1A DO213AB |
6.516 |
|
SUPERECTIFIER® | Standard | 300V | 1A | 1.25V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 300V | 14pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1A DO213AB |
2.100 |
|
SUPERECTIFIER® | Standard | 400V | 1A | 1.25V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 400V | 14pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 1A DO213AB |
4.860 |
|
SUPERECTIFIER® | Standard | 50V | 1A | 1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 50V | 20pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 25V 1.5A DO214AC |
3.042 |
|
- | Schottky | 25V | 1.5A | 500mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 25V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -65°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 35V 1.5A DO214AC |
3.960 |
|
- | Schottky | 35V | 1.5A | 500mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 35V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -65°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 1.5A DO214AC |
4.032 |
|
- | Schottky | 45V | 1.5A | 500mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 45V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -65°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 90V 1.5A DO214AC |
8.766 |
|
- | Schottky | 90V | 1.5A | 750mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 90V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |