Vishay Semiconductor Diodes Division Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
ProduttoreVishay Semiconductor Diodes Division
Record 11.281
Pagina 120/377
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1A DO204AL |
2.970 |
|
SUPERECTIFIER® | Standard | 600V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 3µs | 5µA @ 600V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.6KV 1A DO204AL |
4.788 |
|
SUPERECTIFIER® | Standard | 1600V | 1A | 1.3V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 3µs | 5µA @ 1600V | 5pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 90V 1.5A DO214AC |
5.652 |
|
Automotive, AEC-Q100 | Schottky | 90V | 1.5A | 750mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 90V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 2A DO214AA |
5.994 |
|
- | Standard | 100V | 2A | 930mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 2µA @ 100V | 30pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 2A DO214AA |
8.064 |
|
- | Standard | 150V | 2A | 930mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 2µA @ 150V | 30pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 2A DO214AA |
2.214 |
|
- | Standard | 200V | 2A | 930mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 2µA @ 200V | 30pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 2A DO214AA |
8.532 |
|
- | Standard | 100V | 2A | 930mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 2µA @ 100V | 30pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 2A DO214AA |
5.976 |
|
- | Standard | 150V | 2A | 930mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 2µA @ 150V | 30pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 2A DO214AA |
3.024 |
|
- | Standard | 200V | 2A | 930mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 2µA @ 200V | 30pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1.5A DO214AA |
8.334 |
|
- | Standard | 200V | 1.5A | 1.15V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 200V | 16pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 1.5A DO214 |
4.536 |
|
- | Standard | 1000V | 1.5A | 1.15V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 1000V | 16pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1.5A DO214AA |
4.770 |
|
- | Standard | 400V | 1.5A | 1.15V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 400V | 16pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 1.5A DO214AA |
6.624 |
|
- | Standard | 800V | 1.5A | 1.15V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 800V | 16pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 1A DO213AB |
3.598 |
|
SUPERECTIFIER® | Standard | 100V | 1A | 1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 100V | 20pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 1A DO213AB |
2.142 |
|
SUPERECTIFIER® | Standard | 150V | 1A | 1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 150V | 20pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 300V 1A DO213AB |
8.280 |
|
SUPERECTIFIER® | Standard | 300V | 1A | 1.25V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 300V | 14pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 1A DO213AB |
4.050 |
|
SUPERECTIFIER® | Standard | 50V | 1A | 1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 50V | 20pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 1KV 1.5A |
8.838 |
|
- | Avalanche | 1000V | 1.5A | 1.6V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | 1µA @ 1000V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 90V 1A SMA |
5.112 |
|
Automotive, AEC-Q100 | Schottky | 90V | 1A | 860mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1µA @ 90V | - | Surface Mount | DO-214AC, SMA | SMA (DO-214AC) | 175°C (Max) |
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 800V 1A DO220AA |
5.634 |
|
eSMP® | Avalanche | 800V | 1A | 1.6V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | 1µA @ 800V | 8.5pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 1000V 1A DO220AA |
5.796 |
|
eSMP® | Avalanche | 1000V | 1A | 1.6V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | 1µA @ 1000V | 8.5pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 1A DO220AA |
3.508 |
|
eSMP® | Avalanche | 200V | 1A | 1.5V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 1µA @ 200V | 11pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 400V 1A DO220AA |
3.870 |
|
eSMP® | Avalanche | 400V | 1A | 1.5V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 1µA @ 400V | 11pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 600V 1A DO220AA |
8.910 |
|
eSMP® | Avalanche | 600V | 1A | 1.5V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 1µA @ 600V | 11pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 1.9A DO214AA |
6.534 |
|
TMBS® | Schottky | 100V | 1.9A | 700mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 250µA @ 100V | 230pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 1.9A DO214AA |
2.286 |
|
TMBS® | Schottky | 100V | 1.9A | 770mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | - | 250µA @ 100V | 230pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -40°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 1A SMB |
5.076 |
|
- | Schottky | 60V | 1A | 490mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 60V | 80pF @ 5V, 1MHz | Surface Mount | DO-214AA, SMB | SMB | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 1A DO204AL |
8.028 |
|
- | Schottky | 30V | 1A | 875mV @ 3.1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 30V | 110pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 125°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 1A DO204AL |
5.724 |
|
- | Schottky | 40V | 1A | 900mV @ 3.1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 40V | 110pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 125°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 1A 40V DO-41 |
8.748 |
|
- | Schottky | 40V | 1A | 480mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 1.8µs | 500µA @ 40V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 125°C |