Vishay Semiconductor Diodes Division Raddrizzatori a ponte
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori a ponte
ProduttoreVishay Semiconductor Diodes Division
Record 1.378
Pagina 19/46
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tecnologia | Tensione - Picco inverso (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Corrente - Perdita inversa @ Vr | Temperatura di esercizio | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Semiconductor Diodes Division |
BRIDGE RECT 1PHASE 150V 3.8A GBU |
2.196 |
|
- | Single Phase | Standard | 150V | 3.8A | 1V @ 6A | 5µA @ 150V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
|
|
|
Vishay Semiconductor Diodes Division |
BRIDGE RECT 1PHASE 400V 3.8A GBU |
3.870 |
|
- | Single Phase | Standard | 400V | 3.8A | 1V @ 6A | 5µA @ 400V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
|
|
|
Vishay Semiconductor Diodes Division |
BRIDGE RECT 1PHASE 800V 8A GBU |
3.294 |
|
- | Single Phase | Standard | 800V | 8A | 1V @ 8A | 5µA @ 800V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
|
|
|
Vishay Semiconductor Diodes Division |
BRIDGE RECT 1PHASE 1KV 8A GBU |
8.046 |
|
- | Single Phase | Standard | 1kV | 8A | 1V @ 8A | 5µA @ 1000V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
|
|
|
Vishay Semiconductor Diodes Division |
RECTIFIER BRIDGE 800V 1.9A D-37 |
8.910 |
|
* | - | - | - | - | - | - | - | - | - | - |
|
|
|
Vishay Semiconductor Diodes Division |
BRIDGE RECT 1P 600V 3.4A BU |
5.580 |
|
- | Single Phase | Standard | 600V | 3.4A | 1.05V @ 6A | 5µA @ 600V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, BU | isoCINK+™ BU |
|
|
|
Vishay Semiconductor Diodes Division |
BRIDGE RECT 1P 800V 3.4A BU |
4.374 |
|
- | Single Phase | Standard | 800V | 3.4A | 1.05V @ 6A | 5µA @ 800V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, BU | isoCINK+™ BU |
|
|
|
Vishay Semiconductor Diodes Division |
BRIDGE RECT 1P 600V 10A BU |
6.588 |
|
- | Single Phase | Standard | 600V | 10A | 1.1V @ 5A | 10µA @ 600V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, BU | isoCINK+™ BU |
|
|
|
Vishay Semiconductor Diodes Division |
BRIDGE RECT 1P 800V 10A BU |
8.100 |
|
- | Single Phase | Standard | 800V | 10A | 1.1V @ 5A | 5µA @ 800V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, BU | isoCINK+™ BU |
|
|
|
Vishay Semiconductor Diodes Division |
BRIDGE RECT 1P 1KV 10A BU |
8.046 |
|
- | Single Phase | Standard | 1kV | 10A | 1.1V @ 5A | 5µA @ 1000V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, BU | isoCINK+™ BU |
|
|
|
Vishay Semiconductor Diodes Division |
BRIDGE RECT 1PHASE 200V 2.8A GBU |
4.482 |
|
- | Single Phase | Standard | 200V | 2.8A | 1.05V @ 3A | 5µA @ 200V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
|
|
|
Vishay Semiconductor Diodes Division |
BRIDGE RECT 1PHASE 600V 2.8A GBU |
2.160 |
|
- | Single Phase | Standard | 600V | 2.8A | 1.05V @ 3A | 5µA @ 600V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
|
|
|
Vishay Semiconductor Diodes Division |
BRIDGE RECT 1PHASE 800V 2.8A GBU |
6.894 |
|
- | Single Phase | Standard | 800V | 2.8A | 1.05V @ 3A | 5µA @ 800V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
|
|
|
Vishay Semiconductor Diodes Division |
BRIDGE RECT 1P 600V 3A BU |
951 |
|
- | Single Phase | Standard | 600V | 3A | 1.1V @ 5A | 10µA @ 600V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, BU | isoCINK+™ BU |
|
|
|
Vishay Semiconductor Diodes Division |
BRIDGE RECT 1P 800V 3A BU |
369 |
|
- | Single Phase | Standard | 800V | 3A | 1.1V @ 5A | 5µA @ 800V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, BU | isoCINK+™ BU |
|
|
|
Vishay Semiconductor Diodes Division |
BRIDGE RECT 1P 1KV 3A BU |
4.788 |
|
- | Single Phase | Standard | 1kV | 3A | 1.1V @ 5A | 5µA @ 1000V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, BU | isoCINK+™ BU |
|
|
|
Vishay Semiconductor Diodes Division |
BRIDGE RECT 1P 600V 3A BU-5S |
4.770 |
|
- | Single Phase | Standard | 600V | 3A | 1.1V @ 5A | 10µA @ 600V | -55°C ~ 150°C (TJ) | Through Hole | 4-ESIP, BU-5S | isoCINK+™ BU-5S |
|
|
|
Vishay Semiconductor Diodes Division |
BRIDGE RECT 1P 800V 3A BU-5S |
6.120 |
|
- | Single Phase | Standard | 800V | 3A | 1.05V @ 5A | 5µA @ 800V | -55°C ~ 150°C (TJ) | Through Hole | 4-ESIP, BU-5S | isoCINK+™ BU-5S |
|
|
|
Vishay Semiconductor Diodes Division |
BRIDGE RECT 1P 1KV 3A BU-5S |
3.870 |
|
- | Single Phase | Standard | 1kV | 3A | 1.1V @ 5A | 5µA @ 1000V | -55°C ~ 150°C (TJ) | Through Hole | 4-ESIP, BU-5S | isoCINK+™ BU-5S |
|
|
|
Vishay Semiconductor Diodes Division |
BRIDGE RECT 1P 400V 2.8A GSIB-5S |
5.850 |
|
- | Single Phase | Standard | 400V | 2.8A | 1V @ 3A | 10µA @ 400V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GSIB-5S | GSIB-5S |
|
|
|
Vishay Semiconductor Diodes Division |
BRIDGE RECT 1P 600V 2.8A GSIB-5S |
6.372 |
|
- | Single Phase | Standard | 600V | 2.8A | 1V @ 3A | 10µA @ 600V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GSIB-5S | GSIB-5S |
|
|
|
Vishay Semiconductor Diodes Division |
BRIDGE RECT 1P 800V 2.8A GSIB-5S |
7.614 |
|
- | Single Phase | Standard | 800V | 2.8A | 1V @ 3A | 10µA @ 800V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GSIB-5S | GSIB-5S |
|
|
|
Vishay Semiconductor Diodes Division |
BRIDGE RECT 1PHASE 400V 3A D-72 |
3.312 |
|
- | Single Phase | Standard | 400V | 3A | 1.1V @ 1.5A | - | -40°C ~ 150°C (TJ) | Through Hole | 4-Square, D-72 | D-72 |
|
|
|
Vishay Semiconductor Diodes Division |
BRIDGE RECT 1P 1KV 3.2A BU |
5.256 |
|
- | Single Phase | Standard | 1kV | 3.2A | 1.05V @ 5A | 5µA @ 1000V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, BU | isoCINK+™ BU |
|
|
|
Vishay Semiconductor Diodes Division |
BRIDGE RECT 1P 600V 3.2A BU-5S |
8.172 |
|
isoCink+™ | Single Phase | Standard | 600V | 3.2A | 1.05V @ 5A | 10µA @ 600V | -55°C ~ 150°C (TJ) | Through Hole | 4-ESIP, BU-5S | isoCINK+™ BU-5S |
|
|
|
Vishay Semiconductor Diodes Division |
BRIDGE RECT 1P 800V 3.2A BU-5S |
3.330 |
|
- | Single Phase | Standard | 800V | 3.2A | 1.05V @ 5A | 5µA @ 800V | -55°C ~ 150°C (TJ) | Through Hole | 4-ESIP, BU-5S | isoCINK+™ BU-5S |
|
|
|
Vishay Semiconductor Diodes Division |
BRIDGE RECT 1P 400V 2.8A GSIB-5S |
2.454 |
|
- | Single Phase | Standard | 400V | 2.8A | 950mV @ 3A | 10µA @ 400V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GSIB-5S | GSIB-5S |
|
|
|
Vishay Semiconductor Diodes Division |
BRIDGE RECT 1P 600V 10A BU |
5.400 |
|
- | Single Phase | Standard | 600V | 10A | 1.05V @ 5A | 5µA @ 600V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, BU | isoCINK+™ BU |
|
|
|
Vishay Semiconductor Diodes Division |
BRIDGE RECT 1P 800V 10A BU |
8.406 |
|
- | Single Phase | Standard | 800V | 10A | 1.05V @ 5A | 5µA @ 800V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, BU | isoCINK+™ BU |
|
|
|
Vishay Semiconductor Diodes Division |
BRIDGE RECT 1P 1KV 10A BU |
4.338 |
|
- | Single Phase | Standard | 1kV | 10A | 1.05V @ 5A | 5µA @ 1000V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, BU | isoCINK+™ BU |