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Toshiba Memory America, Inc. Memoria

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CategoriaSemiconduttori / Circuiti integrati di memoria / Memoria
ProduttoreToshiba Memory America, Inc.
Record 112
Pagina 1/4
Immagine
Numero parte
Produttore
Descrizione
Disponibile
Quantità
Serie
Tipo di memoria
Formato memoria
Tecnologia
Dimensione della memoria
Interfaccia di memoria
Frequenza di clock
Tempo di ciclo di scrittura - Parola, pagina
Tempo di accesso
Tensione - Alimentazione
Temperatura di esercizio
Tipo di montaggio
Pacchetto / Custodia
Pacchetto dispositivo fornitore
TH58BVG2S3HTA00
Toshiba Memory America, Inc.
IC FLASH 4G PARALLEL 48TSOP I
8.802
Benand™
Non-Volatile
FLASH
FLASH - NAND (SLC)
4Gb (512M x 8)
Parallel
-
25ns
25ns
2.7V ~ 3.6V
0°C ~ 70°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP I
TC58CVG1S3HRAIG
Toshiba Memory America, Inc.
2GB SERIAL NAND 24NM WSON 3.3V
8.724
-
Non-Volatile
FLASH
FLASH - NAND (SLC)
2Gb (256M x 8)
SPI
104MHz
-
-
2.7V ~ 3.6V
-40°C ~ 85°C
Surface Mount
8-WDFN Exposed Pad
8-WSON (6x8)
THGBMNG5D1LBAIT
Toshiba Memory America, Inc.
IC FLASH 32G MMC 52MHZ 153WFBGA
3.801
e•MMC™
Non-Volatile
FLASH
FLASH - NAND
32Gb (4G x 8)
eMMC
52MHz
-
-
2.7V ~ 3.6V
-25°C ~ 85°C (TA)
Surface Mount
153-WFBGA
153-WFBGA (11x10)
THGAF8G9T43BAIR
Toshiba Memory America, Inc.
IC FLASH 512G UFS 153VFBGA
7.632
Consumer UFS
Non-Volatile
FLASH
FLASH - NAND
512Gb (64G x 8)
UFS
-
-
-
2.7V ~ 3.6V
-25°C ~ 85°C (TC)
Surface Mount
153-VFBGA
153-VFBGA (11.5x13)
TC58NYG0S3HBAI6
Toshiba Memory America, Inc.
IC FLASH 1G PARALLEL 67VFBGA
8.256
-
Non-Volatile
FLASH
FLASH - NAND (SLC)
1Gb (128M x 8)
Parallel
-
25ns
25ns
1.7V ~ 1.95V
-40°C ~ 85°C (TA)
Surface Mount
67-VFBGA
67-VFBGA (6.5x8)
TC58BVG0S3HBAI6
Toshiba Memory America, Inc.
IC FLASH 1G PARALLEL 67VFBGA
403
Benand™
Non-Volatile
FLASH
FLASH - NAND (SLC)
1Gb (128M x 8)
Parallel
-
25ns
25ns
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
67-VFBGA
67-VFBGA (6.5x8)
TC58NVG0S3HBAI6
Toshiba Memory America, Inc.
IC FLASH 1G PARALLEL 67VFBGA
6.120
-
Non-Volatile
FLASH
FLASH - NAND (SLC)
1Gb (128M x 8)
Parallel
-
25ns
25ns
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
67-VFBGA
67-VFBGA (6.5x8)
TC58BVG0S3HBAI4
Toshiba Memory America, Inc.
IC FLASH 1G PARALLEL 63TFBGA
4.162
Benand™
Non-Volatile
FLASH
FLASH - NAND (SLC)
1Gb (128M x 8)
Parallel
-
25ns
25ns
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
63-VFBGA
63-TFBGA (9x11)
TC58NVG0S3HBAI4
Toshiba Memory America, Inc.
IC FLASH 1G PARALLEL 63TFBGA
26.490
-
Non-Volatile
FLASH
FLASH - NAND (SLC)
1Gb (128M x 8)
Parallel
-
25ns
25ns
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
63-VFBGA
63-TFBGA (9x11)
TC58NVG0S3HTAI0
Toshiba Memory America, Inc.
IC FLASH 1G PARALLEL 48TSOP I
3.522
-
Non-Volatile
FLASH
FLASH - NAND (SLC)
1Gb (128M x 8)
Parallel
-
25ns
25ns
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP I
TC58NVG0S3HTA00
Toshiba Memory America, Inc.
IC FLASH 1G PARALLEL 48TSOP I
14.410
-
Non-Volatile
FLASH
FLASH - NAND (SLC)
1Gb (128M x 8)
Parallel
-
25ns
25ns
2.7V ~ 3.6V
0°C ~ 70°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP I
TC58CVG0S3HRAIG
Toshiba Memory America, Inc.
IC FLASH 1G SPI 104MHZ 8WSON
13.695
-
Non-Volatile
FLASH
FLASH - NAND (SLC)
1Gb (128M x 8)
SPI - Quad I/O
104MHz
-
155µs
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
8-WDFN Exposed Pad
8-WSON (6x8)
TC58BYG1S3HBAI6
Toshiba Memory America, Inc.
IC FLASH 2G PARALLEL 67VFBGA
19.716
Benand™
Non-Volatile
FLASH
FLASH - NAND (SLC)
2Gb (256M x 8)
Parallel
-
25ns
25ns
1.7V ~ 1.95V
-40°C ~ 85°C (TA)
Surface Mount
67-VFBGA
67-VFBGA (6.5x8)
TC58NYG1S3HBAI6
Toshiba Memory America, Inc.
IC FLASH 2G PARALLEL 67VFBGA
7.920
-
Non-Volatile
FLASH
FLASH - NAND (SLC)
2Gb (256M x 8)
Parallel
-
25ns
25ns
1.7V ~ 1.95V
-40°C ~ 85°C (TA)
Surface Mount
67-VFBGA
67-VFBGA (6.5x8)
TC58NVG1S3HBAI6
Toshiba Memory America, Inc.
IC FLASH 2G PARALLEL 67VFBGA
197.921
-
Non-Volatile
FLASH
FLASH - NAND (SLC)
2Gb (256M x 8)
Parallel
-
25ns
25ns
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
67-VFBGA
67-VFBGA (6.5x8)
TC58BYG0S3HBAI4
Toshiba Memory America, Inc.
1GB SLC NAND BGA 24NM I TEMP (EE
7.290
Benand™
Non-Volatile
FLASH
FLASH - NAND (SLC)
1Gb (128M x 8)
-
-
25ns
-
1.7V ~ 1.95V
-40°C ~ 85°C (TA)
Surface Mount
63-VFBGA
63-TFBGA (9x11)
TC58CYG0S3HRAIG
Toshiba Memory America, Inc.
1GB SERIAL NAND 24NM WSON 1.8V
8.292
-
Non-Volatile
FLASH
FLASH - NAND (SLC)
2Gb (256M x 8)
SPI
104MHz
-
-
1.7V ~ 1.95V
-40°C ~ 85°C
Surface Mount
8-WDFN Exposed Pad
8-WSON (6x8)
TC58NYG2S0HBAI6
Toshiba Memory America, Inc.
IC FLASH 4G PARALLEL 67VFBGA
7.968
-
Non-Volatile
FLASH
FLASH - NAND (SLC)
4Gb (512M x 8)
Parallel
-
25ns
25ns
1.7V ~ 1.95V
-40°C ~ 85°C (TA)
Surface Mount
67-VFBGA
67-VFBGA (6.5x8)
TC58BYG1S3HBAI4
Toshiba Memory America, Inc.
2GB SLC NAND BGA 24NM I TEMP (EE
8.040
Benand™
Non-Volatile
FLASH
FLASH - NAND (SLC)
2Gb (256M x 8)
-
-
25ns
-
1.7V ~ 1.95V
-40°C ~ 85°C (TA)
Surface Mount
63-VFBGA
63-TFBGA (9x11)
TC58BVG1S3HBAI4
Toshiba Memory America, Inc.
2GB SLC BENAND 24NM BGA 9X11 (EE
2.263
Benand™
Non-Volatile
FLASH
FLASH - NAND (SLC)
2Gb (256M x 8)
-
-
25ns
-
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
63-VFBGA
63-TFBGA (9x11)
TC58BYG2S0HBAI4
Toshiba Memory America, Inc.
4GB SLC BENAND 24NM BGA 9X11 (EE
7.584
Benand™
Non-Volatile
FLASH
FLASH - NAND (SLC)
4G (512M x 8)
Parallel
-
25ns
25ns
1.7V ~ 1.95V
-40°C ~ 85°C (TA)
Surface Mount
63-VFBGA
63-TFBGA (9x11)
TC58BVG2S0HBAI4
Toshiba Memory America, Inc.
IC FLASH 4G PARALLEL 63TFBGA
7.080
Benand™
Non-Volatile
FLASH
FLASH - NAND (SLC)
4Gb (512M x 8)
Parallel
-
25ns
25ns
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
63-VFBGA
63-TFBGA (9x11)
TH58BYG2S3HBAI6
Toshiba Memory America, Inc.
IC FLASH 4G PARALLEL 67VFBGA
7.980
Benand™
Non-Volatile
FLASH
FLASH - NAND (SLC)
4Gb (512M x 8)
Parallel
-
25ns
25ns
1.7V ~ 1.95V
-40°C ~ 85°C (TA)
Surface Mount
67-VFBGA
67-VFBGA (6.5x8)
TH58NVG2S3HTA00
Toshiba Memory America, Inc.
IC FLASH 4G PARALLEL 48TSOP I
86.195
-
Non-Volatile
FLASH
FLASH - NAND (SLC)
4Gb (512M x 8)
Parallel
-
25ns
25ns
2.7V ~ 3.6V
0°C ~ 70°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP I
TC58CYG1S3HRAIG
Toshiba Memory America, Inc.
2GB SERIAL NAND 24NM WSON 1.8V
8.016
-
Non-Volatile
FLASH
FLASH - NAND (SLC)
2Gb (256M x 8)
SPI
104MHz
-
-
1.7V ~ 1.95V
-40°C ~ 85°C
Surface Mount
8-WDFN Exposed Pad
8-WSON (6x8)
TH58NVG2S3HBAI4
Toshiba Memory America, Inc.
4GB SLC NAND 24NM BGA 9X11 (EEPR
7.488
-
Non-Volatile
FLASH
FLASH - NAND (SLC)
4Gb (512M x 8)
Parallel
-
25ns
-
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
63-BGA
63-BGA (9x11)
TH58BVG2S3HTAI0
Toshiba Memory America, Inc.
IC FLASH 4G PARALLEL 48TSOP I
6.828
Benand™
Non-Volatile
FLASH
FLASH - NAND (SLC)
4Gb (512M x 8)
Parallel
-
25ns
25ns
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP I
TC58NYG2S0HBAI4
Toshiba Memory America, Inc.
4GB SLC NAND 24NM BGA 9X11 1.8V
7.728
-
Non-Volatile
FLASH
FLASH - NAND (SLC)
4Gb (512M x 8)
-
-
25ns
-
1.7V ~ 1.95V
-40°C ~ 85°C (TA)
Surface Mount
63-VFBGA
63-TFBGA (9x11)
TH58BVG2S3HBAI4
Toshiba Memory America, Inc.
4GB SLC BENAND 24NM BGA 9X11 (EE
7.452
Benand™
Non-Volatile
FLASH
FLASH - NAND (SLC)
4Gb (512M x 8)
-
-
25ns
-
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
63-VFBGA
63-TFBGA (9x11)
TH58BYG2S3HBAI4
Toshiba Memory America, Inc.
4G SLC NAND BGA 24NM
7.272
Benand™
Non-Volatile
FLASH
FLASH - NAND (SLC)
4Gb (512M x 8)
-
-
-
-
-
-40°C ~ 85°C
Surface Mount
63-VFBGA
63-TFBGA (9x11)