Vishay N-channel power MOSFETs effectively improve power efficiency and power density

     Vishay Intertechnology has announced the launch of its new 25V n-channel TrenchFET Gen IV power MOSFET, the SiRA20DP, which has the industry's lowest maximum on-resistance at 10V at 0.58m2. The VishaySiliconixSiRA20DP has the lowest gate charge and on-resistance of less than 0.6mΩ, making the gate charge and on-resistance product coefficient of excellence (FOM) also the lowest, allowing a variety of applications to improve efficiency and power density.

     The MOSFET is available in a 6mmx5mm PowerPAK SO-8 package and is one of two 25VmosFETs with a maximum on-resistance of less than 0.6m2. Compared to similar devices, the SiRA20DP has a lower typical gate charge of only 61nC and a FOM of 0.035Q*nC, 32% lower. Other 25VN channel MOSFETs have on-resistance of 11% or more.

     The SiRA20DP's low on-resistance reduces conducted power losses, improves system efficiency, and achieves higher power density, making it particularly suitable for the OR-ring function in redundant power supply architectures. The low FOM of the device improves switching performance, such as DC/DC conversion in communication and server power supplies, battery switching in battery systems, and load switching from 5V to 12V input power supplies.