The world's first 1500V overjunction power MOSFET for greener, safer power applications

     STMicroelectronics' new family of power MOSFETs enables power designers to maximize product performance while improving operational robustness and safety. The MDmeshTM K5 product is the world's first transistor with both the advantages of overjunction technology and a 1500V drain-to-source breakdown voltage, and has been used in key designs by major customers in Asia, Europe and the United States.

     The new products target the computer server and industrial automation markets. Servers require higher auxiliary switching power output, while power robustness is a key element to minimize outage downtime, and industrial automation applications such as welding and factory automation also require greater output power. With output power ranging from 75W to 230W or higher for these applications, the superior dynamic switching performance of hyperjunction MOSFET technology makes it the best choice for industrial applications.

     STMicroelectronics' MDmesh K5 power MOSFETs take this technology to a whole new level, with the lowest Rds(on) per unit area and gate charge (Qg) in the market, and the industry's best FoM(Quality factor). Ideal for today's mainstream power topologies, the new products include standard quasi-resonant active clamp flyback converters and LLC half-bridge converters, which require a wide input voltage, high energy efficiency (up to 96%), and power output of nearly 200W.

     The first two products in this series are the STW12N150K5 and STW21N150K5, which have a maximum drain-source current of 7A and 14A, respectively, and a gate charge of only 47nC(STW12N150K5) or on-state resistance of only 0.9Ω(STW21N150K5).