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Texas Instruments drives feature 5 V UVLO, enable functionality, negative voltage handling, and low switching losses

gen 25 2023 2023-01 Semiconductors Texas Instruments
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The Texas Instruments UCC27284 is a robust n-channel MOSFET driver with a switching node (HS) rating of 100 V (Max.). Using small package, can achieve high density design.

The Texas Instruments UCC27284 is a robust n-channel MOSFET driver with a switching node (HS) rating of 100 V (Max.). It allows control of two n-channel MosFeTs in topologies based on half-bridge or synchronous step-down configurations. The UCC27284 features low pull-down/pull-down resistance, 3A peak pull-current and filling current, so it can drive a high-power MOSFET with minimal switching losses during the MOSFET Miller platform transition.

 

The input is independent of the power supply voltage, allowing the driver to be used in combination with analog and digital controllers. If desired, the two inputs and outputs can overlap in applications such as secondary side full bridge synchronous rectification. Input pins and HS pins can withstand a large negative voltage, thus improving the robustness of the system. Enable and disable functions provide additional system flexibility by reducing grid driver power consumption and rapidly responding to fault events within the system. The 5 V undervoltage locking (UVLO) allows the system to operate at lower bias voltages, which is required in many high frequency applications, and improves system efficiency in some operating modes.

 

The smaller propagation delay and delay matching specifications minimize dead-time requirements, further improving efficiency. UVLO is provided for the high voltage side and low voltage side excitation stages, and if the VDD voltage falls below a specified threshold, the output is forced to low. Integrated bootstrap diodes eliminate the need for external discrete diodes in many applications, thereby saving board space and reducing system costs. The UCC27284 comes in a small package that allows for high density design.

 

Features

● Two N channel MosFeTs are driven in a high voltage and low voltage configuration
● UVLO: 5 V (typical value)
● Enable/Disable functionality in DRC packaging
● Propagation delay: 16 ns (typical value)
● Up: 12 ns; Descent time: 10 ns (1.8 nF load)
● Negative voltage treatment: 5 V (input end) and 14 V (HS end)
● Delay matching: 1 ns (typical value)
● Peak output current: ±3 A
● Boot voltage: 120 V (absolute maximum)
● Low current consumption: 7 µA when disabled
● Integrated bootstrap diode
● Junction temperature range: -40°C to +140°C

 

Applications

● Commercial network and server Psus
● Merchant telecommunication rectifier
● Dc input BLDC motor driver
● Testing and measuring equipment
● Solar optimizer

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