STMicroelectronics next generation smart power modules up to 100W increase functional integration, energy efficiency and flexibility

     STMicroelectronics expands its SLLIMM™ nano family of motor driven Intelligent Power Modules (IPM) product lineup. In addition to a variety of packages that minimize the overall size of the application and minimize design complexity, the new product integrates more practical features and higher energy efficiency with the latest 500V MOSFETs.

     The new IPM module has a rated output current of 1A or 2A and is targeted for applications in the motor drive market with a maximum power of 100W, such as refrigerator compressors, washing machine or dishwasher motors, drainage pumps, circulating pumps, fan motors, and motor drivers operating at frequencies less than 20kHz in hard switching circuits. The new product has a maximum operating temperature of 150°C and can work in harsh working environments.

     The module integrates a three-phase MOSFET bridge and gate driver HVIC and utility features, including an idle op amp and comparator for overcurrent protection and current measurement functions. Other built-in safety features include interlocking to prevent direct current from burning the bridge MOSFETs, as well as an error status output, turn-off input, and intelligent turn-off. The internal optional thermistor helps simplify the overheat protection circuit.

     In addition to the toothed pin package, the new series offers in-line packages that give designers more flexibility to simplify board design and minimize controller size in electromechanical assemblies and other space-constrained applications. The excellent thermal performance of these packages, combined with the superior energy efficiency of ST's latest 500V MOSFETs, gives designers the flexibility to reduce heat sink size and develop radiator-free, low-power motor drive solutions. In the 2A and 1A models, the MOSFET on-resistance is 3.6Ω and 1.7Ω, respectively, and the low on-resistance combined with the low switching loss ensures excellent overall energy efficiency for the application design.

     The MOSFET is also equipped with an open-emission pole-to-module pin connection, which simplifies the design of a vector control (FOC) three-way shunt or trapezoid wave single-way shunt control. The new module also integrates the bootstrap diode required for high-edge MOSFET gate control, further reducing the need for external components.