STMicroelectronics Advanced silicon carbide power devices accelerate vehicle electrification

     STMicroelectronics announced advanced energy-efficient power semiconductor devices in the hybrid and Electric vehicle (EV) markets, and also announced the automotive quality certification schedule for its new product AEC-Q101.

     Electric and hybrid cars extend their driving range by improving the utilization of electricity. St's latest silicon carbide (SiC) technology enables automakers to develop electric and hybrid vehicles with longer range and faster charging speeds, making them better integrated into the lives of their owners. As a leader in silicon carbide technology, ST is the first to introduce a new generation of rectifier tubes and MOSFET transistors for all major electrical modules in automobiles. The new products can be used in high-voltage power modules and discrete power solutions, including traction inverters, on-board chargers and auxiliary DC-DC converters.

     Currently, power modules typically rely primarily on standard silicon diodes and isolated gate bipolar transistors (IGBTs). Silicon carbide is a newer wide-band gap technology that allows power modules to be smaller in size while operating at much higher voltages than the 400V powertrains of today's electric and hybrid vehicles. The structure of the silicon carbide diode and transistor is reduced, the internal resistance is reduced, the response speed is faster than the standard silicon product, and the power loss is minimized, so that the relevant device size is reduced, saving space and reducing weight.

     Mario Aleo, vice president and General manager of ST's Power Transistor Product Division, said: "Major vehicle companies and Tier 1 suppliers are using silicon carbide technology for future product development, taking advantage of its overall efficiency over standard silicon devices in a variety of work scenarios. "Our silicon carbide products are performing well and are in the final stages of product certification, and we are assisting our customers with their 2017 model launch plans."

     ST was one of the first companies in the industry to release a silicon carbide high voltage MOSFET, introducing its first 1200V silicon carbide MOSFET transistor back in 2014 with an industry-leading 200°C operating temperature rating, allowing designers to achieve more efficient and simplified designs.

     ST manufactures silicon carbide diodes and transistors using the industry's most advanced manufacturing processes and 4-inch wafers. In order to reduce manufacturing costs, improve product quality and capacity, and meet the needs of the automotive industry, ST is upgrading the production line of silicon carbide MOSFET transistors and diodes, and expects to complete the 6-inch wafer manufacturing facility upgrade program by the end of 2016.

     ST has completed 650V AEC-Q101 class Silicon Carbide diode certification, and the latest 650V silicon carbide MOSFETs and 1200V silicon carbide diodes will be completed in early 2017. The new generation of 1200V silicon carbide MOSFETs will complete certification testing by the end of 2017.

     The STPSC20065WY 650V silicon carbide diode is now in full production in the DO-247 package and is also available in the TO-220 package with a smaller current rating and appearance size. The STPSC10H12D 1200V silicon carbide diode is being provided TO large customers in sample, in TO-220AC package, mass production began in May, automotive grade product is expected to be mass production by the end of 2016, will also be available in 6A to 20A rated current and a variety of package options.