ST Complete full bridge system package with built-in MOSFETs, gate drivers and protection technology
ST's PWD13F60 System Package (SiP) integrates a complete 600V/8A single-phase MOSFET full-bridge circuit in a 13mm x 11mm package, saving material costs and board space for industrial motor drive controllers, lamp ballasts, power supplies, power converters and inverters.
Not only does the PWD13F60 save up to 60% more board space than similar full-bridge circuits designed with discrete devices, it also improves the power density of the final application. While full-bridge modules on the market are typically dual FET half-bridges or six-FET three-phase products, the PWD13F60 integrates four power MOSFETs, making it a particularly energy-efficient alternative. Unlike these products, a single phase full bridge design can be completed with a single PWD13F60, which allows none of the internal MOSFET tubes to be idle. The new full bridge module can be flexibly configured as one full bridge or two half Bridges.
Using ST's high voltage BCD6s-Offine manufacturing process, the PWD13F60 integrates a power MOSFET gate driver and an upper arm drive bootstrap diode, which has the benefit of simplifying board design, streamlining the assembly process, and saving external components. The grid driver has been optimized to achieve high switching reliability and low EMI(electromagnetic interference). The system package also features cross-on-protection and undervoltage lock protection, helping to further reduce the footprint while ensuring system security.
Other features of the PWD13F60 include wide operating voltages as low as 6.5V for maximum configuration flexibility and design simplicity. In addition, the new system package input pins also accept 3.3V-15V logic signals, making it easy to connect microcontrollers (MCUS), digital processors (DSPS) or sensors.
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