ST Advanced image stabilization Gyroscope allows the next generation of smartphones to take pictures without shaking
The L20G20IS two-axis micro MEMS MEMS system with smaller size, improved performance and advanced vibration resistance from ST is adopted. St is the world leader in mobile MEMS products, with 900 MEMS-related patents and patent applications worldwide. Gyroscopes, smaller, thinner phone camera modules can achieve accurate image stabilization, freeing up more board space for new smartphone features.
The L20G20IS is ST's latest highly integrated optical image stabilization gyroscope with a size of only 2.0mmx2.0mmx0.7mm, which releases 1.29mm2 of circuit board space compared to the previous generation 2.3mmx2.3mm L2G2IS, helping to reduce the size of the mobile phone camera module and simplify the circuit design. The unmatched 6dB rejection ratio enables excellent optical image correction and completely eliminates the hand shake problem of mobile phone photography.
Ultra-thin substrates are usually only 0.2mm or 0.3mm thick and are increasingly used by designers to design ultra-thin phones with cameras that are flush with the body. Even when welded to the latest ultra-thin base, the L20G20IS maintains a high degree of calibration accuracy. To eliminate substrate distortion when the phone is moved, the L20G20IS maintains the Zero rate level (ZRL) within the specified range, ensuring consistent measurement data for image stabilization algorithms.
Overall noise performance is also significantly improved, with a rate noise density (RND) of 3.8mdpsNHz, configurable phase delay down to 1° at 20Hz, and a typical ZRL value of +5dps, all of which help improve the clarity of mobile phone photos. The full range is not overlooked, up to +200dps, while sensitivity and temperature stability are improved. The internal temperature sensor ensures the gyroscope has the highest compensation performance in its class, allowing users to take sharp pictures even with long exposures. In addition, the L20G20IS also improved in other areas, for example, the startup time is less than 70ms, which is 3% faster than the previous generation L2G2IS, and the operating current is only 1.4mA, less than half of the previous generation.
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