EPC's 40V gallium nitride power transistor is 8 times smaller than the equivalent MOSFETs

     EPC announced the EPC2049 power transistor for point-of-load (POL) converters, LiDAR, envelope tracking power supplies, Class D audio amplifiers and motor drivers with low inductance. The EPC2049 transistor has a rated voltage of 40 V, a maximum on-resistance of 5 m9 and a pulse output current of 175A.

     Compared with MOSFETs in plastic packaging, EPC2049 gallium nitride field effect transistors in chip packaging have much better heat dissipation performance, because gallium nitride devices in chip packaging can directly dissipate heat to the environment, while MOSFET chip heat is concentrated in the plastic package. The EPC2049 measures just 2.5 mm x1.5 mm (3.75 square mm). Designers don't need to choose between designing smaller products or higher performance products, but can do both at the same time!

     Alex Lidow, CEO and co-founder of EPC, said: "The EPC2049 demonstrates how EPC and its gallium nitride transistor technology can improve the performance of eGaN devices while reducing prices. EPC2049 is further proof that the performance gap between eGaN and MOSFET technology in terms of performance and cost continues to grow."