Taiwan Semiconductor Corporation Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
ProduttoreTaiwan Semiconductor Corporation
Record 301
Pagina 5/11
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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Taiwan Semiconductor Corporation |
600V N CHANNEL MOSFET |
32.802 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 4A | 10V | 2.5Ohm @ 2A, 10V | 4.5V @ 250µA | 14.5nC @ 10V | ±30V | 500pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251 (IPAK) | TO-251-3 Short Leads, IPak, TO-251AA |
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Taiwan Semiconductor Corporation |
MOSFET SINGLE N-CHANNEL TRENCH |
20.148 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 21A (Ta), 121A (Tc) | 4.5V, 10V | 3.3mOhm @ 21A, 10V | 2.5V @ 250µA | 79nC @ 10V | ±20V | 4456pF @ 20V | - | 3.1W (Ta), 107W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |
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Taiwan Semiconductor Corporation |
650V 4A SINGLE N-CHANNEL POWER M |
35.196 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 4A (Tc) | 10V | 2.6Ohm @ 1.2A, 10V | 3.8V @ 250µA | 16.8nC @ 10V | ±30V | 596pF @ 50V | - | 41.6W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220 | TO-220-3 Full Pack, Isolated Tab |
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Taiwan Semiconductor Corporation |
600V 4A SINGLE N-CHANNEL POWER M |
23.742 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 4A (Tc) | 10V | 2.2Ohm @ 1.4A, 10V | 3.8V @ 250µA | 17.2nC @ 10V | ±30V | 582pF @ 50V | - | 41.6W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220 | TO-220-3 Full Pack, Isolated Tab |
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Taiwan Semiconductor Corporation |
650V 7A SINGLE N-CHANNEL POWER M |
31.578 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 7A (Tc) | 10V | 1.35Ohm @ 1.8A, 10V | 3.8V @ 250µA | 25nC @ 10V | ±30V | 1124pF @ 50V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220 | TO-220-3 Full Pack, Isolated Tab |
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Taiwan Semiconductor Corporation |
600V 7A SINGLE N-CHANNEL POWER M |
30.708 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 7A (Tc) | 10V | 1.2Ohm @ 2A, 10V | 3.8V @ 250µA | 25nC @ 10V | ±30V | 1108pF @ 50V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220 | TO-220-3 Full Pack, Isolated Tab |
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Taiwan Semiconductor Corporation |
500V, 9A, 0.9O SINGLE N-CHANNEL |
31.698 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 9A (Tc) | 10V | 900mOhm @ 2.3A, 10V | 3.8V @ 250µA | 24.5nC @ 10V | ±30V | 1116pF @ 50V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220 | TO-220-3 Full Pack, Isolated Tab |
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Taiwan Semiconductor Corporation |
500V 13A SINGLE N-CHANNEL POWER |
31.842 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 13A (Tc) | 10V | 480mOhm @ 3.3A, 10V | 3.8V @ 250µA | 39nC @ 10V | ±30V | 1877pF @ 50V | - | 57W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220 | TO-220-3 Full Pack, Isolated Tab |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 600V 24A ITO220S |
8.424 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 24A (Tc) | 10V | 150mOhm @ 4.3A, 10V | 4V @ 250µA | 43nC @ 10V | ±30V | 1765pF @ 100V | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220S | TO-220-3 Full Pack |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 600V 38A ITO220S |
23.136 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 38A (Tc) | 10V | 99mOhm @ 5.3A, 10V | 4V @ 250µA | 62nC @ 10V | ±30V | 2587pF @ 100V | - | 69W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220S | TO-220-3 Full Pack |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 600V 38A TO220 |
18.732 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 38A (Tc) | 10V | 99mOhm @ 11.3A, 10V | 4V @ 250µA | 62nC @ 10V | ±30V | 2587pF @ 100V | - | 298W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 600V 38A TO247 |
15.024 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 38A (Tc) | 10V | 99mOhm @ 11.7A, 10V | 4V @ 250µA | 62nC @ 10V | ±30V | 2587pF @ 100V | - | 329W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 600V 78A TO247 |
22.290 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 78A (Tc) | 10V | 41mOhm @ 21.7A, 10V | 4V @ 250µA | 139nC @ 10V | ±30V | 6120pF @ 100V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Taiwan Semiconductor Corporation |
MOSFET P-CH 40V 51A 8PDFN |
64.512 |
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Automotive, AEC-Q101 | P-Channel | MOSFET (Metal Oxide) | 40V | 51A (Tc) | 4.5V, 10V | 16mOhm @ 10A, 10V | 2.5V @ 250µA | 48nC @ 10V | ±20V | 2712pF @ 20V | - | 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |
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Taiwan Semiconductor Corporation |
MOSFET P-CHANNEL 30V 1.3A SOT23 |
4.446 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 1.3A (Ta) | 4.5V, 10V | 180mOhm @ 1.3A, 10V | 3V @ 250µA | 3.2nC @ 4.5V | ±20V | 565pF @ 10V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 30V 5A SOT223 |
7.884 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 5A (Ta) | 4.5V, 10V | 60mOhm @ 5A, 10V | 3V @ 250µA | 7nC @ 5V | ±20V | 555pF @ 15V | - | 3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Taiwan Semiconductor Corporation |
MOSFET P-CHANNEL 30V 4.1A SOT23 |
4.266 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 4.1A (Tc) | 2.5V, 10V | 65mOhm @ 4A, 10V | 900mV @ 250µA | 6.4nC @ 4.5V | ±12V | 810pF @ 15V | - | 1.56W (Tc) | 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 30V 3.5A SOT23 |
8.244 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 3.5A (Ta) | 4.5V, 10V | 57mOhm @ 3.5A, 10V | 3V @ 250µA | 5.5nC @ 4.5V | ±20V | 555pF @ 15V | - | 1.25W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 20V 8A 8SOP |
17.964 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 8A (Tc) | 1.8V, 4.5V | 30mOhm @ 4.5A, 4.5V | 1V @ 250µA | 11.2nC @ 4.5V | ±8V | 500pF @ 10V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 600V 30MA SOT23 |
7.092 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 30mA (Tc) | 0V, 10V | 800Ohm @ 16mA, 10V | 1V @ 8µA | 1.18nC @ 4.5V | ±20V | 51.42pF @ 25V | Depletion Mode | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 30V 25A 8PDFN |
3.852 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 25A (Tc) | 4.5V, 10V | 18mOhm @ 12A, 10V | 2.5V @ 250µA | 4.1nC @ 4.5V | ±20V | 345pF @ 25V | - | 21W (Tc) | 150°C (TJ) | Surface Mount | 8-PDFN (3x3) | 8-PowerWDFN |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 20V 28A 8SOP |
2.718 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 28A (Ta) | 1.8V, 4.5V | 20mOhm @ 20A, 4.5V | 1V @ 250µA | 12.3nC @ 4.5V | ±8V | 961pF @ 15V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 60V 11A TO252 |
7.380 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 11A (Tc) | 4.5V, 10V | 90mOhm @ 6A, 10V | 2.5V @ 250µA | 9.3nC @ 10V | ±20V | 500pF @ 15V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Taiwan Semiconductor Corporation |
MOSFET P-CHANNEL 30V 5.7A SOT26 |
6.084 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 5.7A (Ta) | 4.5V, 10V | 48mOhm @ 5.3A, 10V | 3V @ 250µA | 18.09nC @ 10V | ±20V | 1047.98pF @ 15V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-26 | SOT-23-6 |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 30V 52A 8PDFN |
6.570 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 52A (Tc) | 4.5V, 10V | 8.5mOhm @ 13A, 10V | 2.5V @ 250µA | 14.3nC @ 10V | ±20V | 817pF @ 15V | - | 37W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PDFN (3x3) | 8-PowerWDFN |
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Taiwan Semiconductor Corporation |
MOSFET P-CH 30V 36A 8PDFN |
8.802 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 36A (Tc) | 4.5V, 10V | 15mOhm @ 10A, 10V | 2.5V @ 250µA | 29.3nC @ 10V | ±20V | 1829pF @ 15V | - | 27.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PDFN (3x3) | 8-PowerWDFN |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 30V 62A 8PDFN |
2.880 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 62A (Tc) | 4.5V, 10V | 6mOhm @ 15A, 10V | 2.5V @ 250µA | 25.4nC @ 10V | ±20V | 1342pF @ 15V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PDFN (3x3) | 8-PowerWDFN |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 30V 78A 8PDFN |
7.020 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 78A (Tc) | 4.5V, 10V | 3.8mOhm @ 19A, 10V | 2.5V @ 250µA | 25nC @ 4.5V | ±20V | 2557pF @ 15V | - | 39W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PDFN (3x3) | 8-PowerWDFN |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 30V 50A TO252 |
7.848 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 9mOhm @ 16A, 10V | 2.5V @ 250µA | 45nC @ 4.5V | ±20V | 750pF @ 25V | - | 40W (Tc) | 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Taiwan Semiconductor Corporation |
MOSFET P-CH 30V 64A 8PDFN |
8.532 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 64A (Tc) | 4.5V, 10V | 8.5mOhm @ 14A, 10V | 2.5V @ 250µA | 55nC @ 10V | ±20V | 3234pF @ 15V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PDFN (3x3) | 8-PowerWDFN |