Taiwan Semiconductor Corporation Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
ProduttoreTaiwan Semiconductor Corporation
Record 5.388
Pagina 97/180
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 20V 8A DO214AB |
3.366 |
|
Automotive, AEC-Q101 | Schottky | 20V | 8A | 550mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 125°C |
|
|
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 30V 8A DO214AB |
3.598 |
|
- | Schottky | 30V | 8A | 550mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 125°C |
|
|
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 30V 8A DO214AB |
7.056 |
|
Automotive, AEC-Q101 | Schottky | 30V | 8A | 550mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 125°C |
|
|
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 40V 8A DO214AB |
3.060 |
|
- | Schottky | 40V | 8A | 550mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 125°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 40V 8A DO214AB |
3.472 |
|
Automotive, AEC-Q101 | Schottky | 40V | 8A | 550mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 125°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 50V 8A DO214AB |
5.058 |
|
- | Schottky | 50V | 8A | 750mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 50V 8A DO214AB |
3.492 |
|
Automotive, AEC-Q101 | Schottky | 50V | 8A | 750mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 8A DO214AB |
4.266 |
|
Automotive, AEC-Q101 | Schottky | 60V | 8A | 750mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 300V 10A TO220AB |
8.298 |
|
- | Standard | 300V | 10A | 1.3V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 300V | 50pF @ 4V, 1MHz | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 5A ITO220AB |
8.856 |
|
- | Standard | 100V | 5A | 980mV @ 2.5A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 100V | 70pF @ 4V, 1MHz | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 5A ITO220AB |
3.690 |
|
- | Standard | 200V | 5A | 980mV @ 2.5A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | 70pF @ 4V, 1MHz | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 300V 5A ITO220AB |
7.632 |
|
- | Standard | 300V | 5A | 1.3V @ 2.5A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 300V | 50pF @ 4V, 1MHz | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 8A TO220AC |
3.276 |
|
- | Standard | 400V | 8A | 1.3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 400V | 60pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 30V 12A DO201AD |
4.536 |
|
- | Schottky | 30V | 12A | 550mV @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | - | Through Hole | DO-201AD, Axial | DO-201AD | -50°C ~ 150°C |
|
|
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 40V 12A DO201AD |
3.906 |
|
- | Schottky | 40V | 12A | 550mV @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Through Hole | DO-201AD, Axial | DO-201AD | -50°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 20V 12A DO201AD |
7.326 |
|
- | Schottky | 20V | 12A | 550mV @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | - | Through Hole | DO-201AD, Axial | DO-201AD | -50°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 10A TO220AB |
4.608 |
|
- | Standard | 600V | 10A | 1.7V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 600V | 50pF @ 4V, 1MHz | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 10A ITO220AB |
5.778 |
|
- | Standard | 400V | 10A | 1.3V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 400V | 50pF @ 4V, 1MHz | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 60V 25A 8PDFN |
4.212 |
|
- | Standard | 60V | 25A | 630mV @ 25A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Surface Mount | 8-PowerTDFN | 8-PDFN (5x6) | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 40V 10A TO220AB |
3.960 |
|
Automotive, AEC-Q101 | Schottky | 40V | 10A | 550mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 125°C |
|
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 40V 10A TO220AC |
7.830 |
|
Automotive, AEC-Q101 | Schottky | 40V | 10A | 550mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 125°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 300V 8A ITO220AC |
2.844 |
|
- | Standard | 300V | 8A | 1.3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 300V | 60pF @ 4V, 1MHz | Through Hole | TO-220-2 Full Pack | ITO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 8A ITO220AC |
8.568 |
|
- | Standard | 400V | 8A | 1.3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 400V | 60pF @ 4V, 1MHz | Through Hole | TO-220-2 Full Pack | ITO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 8A ITO220AC |
3.006 |
|
- | Standard | 600V | 8A | 1.7V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 600V | 60pF @ 4V, 1MHz | Through Hole | TO-220-2 Full Pack | ITO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 300V 10A ITO220AC |
3.636 |
|
- | Standard | 300V | 10A | 1V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 300V | 80pF @ 4V, 1MHz | Through Hole | TO-220-2 Full Pack | ITO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 10A ITO220AC |
2.448 |
|
- | Standard | 400V | 10A | 1.3V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 400V | 80pF @ 4V, 1MHz | Through Hole | TO-220-2 Full Pack | ITO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 10A ITO220AC |
5.238 |
|
- | Standard | 800V | 10A | 1.7V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 80ns | 10µA @ 800V | 60pF @ 4V, 1MHz | Through Hole | TO-220-2 Full Pack | ITO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 10A ITO220AC |
7.740 |
|
- | Standard | - | 10A | 1.7V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 80ns | 10µA @ 1000V | 60pF @ 4V, 1MHz | Through Hole | TO-220-2 Full Pack | ITO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 8A ITO220AC |
8.658 |
|
- | Standard | 600V | 8A | 1.7V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 80ns | 10µA @ 600V | 60pF @ 4V, 1MHz | Through Hole | TO-220-2 Full Pack | ITO-220AC | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 45V 12A DO201AD |
2.700 |
|
- | Schottky | 45V | 12A | 550mV @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | - | 120µA @ 45V | - | Through Hole | DO-201AD, Axial | DO-201AD | 200°C (Max) |