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Taiwan Semiconductor Corporation Raddrizzatori - Singoli

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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
ProduttoreTaiwan Semiconductor Corporation
Record 5.388
Pagina 75/180
Immagine
Numero parte
Produttore
Descrizione
Disponibile
Quantità
Serie
Tipo di diodo
Tensione - Inversione CC (Vr) (Max)
Corrente - Media Rettificata (Io)
Tensione - Avanti (Vf) (Max) @ If
Velocità
Tempo di recupero inverso (trr)
Corrente - Perdita inversa @ Vr
Capacità @ Vr, F
Tipo di montaggio
Pacchetto / Custodia
Pacchetto dispositivo fornitore
Temperatura di esercizio - Giunzione
ESH3B V6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 3A DO214AB
3.510
-
Standard
100V
3A
-
Fast Recovery =< 500ns, > 200mA (Io)
20ns
5µA @ 100V
45pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 175°C
ESH3C V6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 3A DO214AB
6.120
-
Standard
150V
3A
-
Fast Recovery =< 500ns, > 200mA (Io)
20ns
5µA @ 150V
45pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 175°C
ESH3D V6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 3A DO214AB
3.454
-
Standard
200V
3A
-
Fast Recovery =< 500ns, > 200mA (Io)
20ns
5µA @ 200V
45pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 175°C
HS3B V7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 3A DO214AB
8.190
-
Standard
100V
3A
-
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 100V
80pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
HS3D V7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 3A DO214AB
5.472
-
Standard
200V
3A
-
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 200V
80pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
HS3F V7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 3A DO214AB
5.652
-
Standard
300V
3A
-
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 300V
80pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
HS3J V7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO214AB
7.578
-
Standard
600V
3A
-
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 600V
50pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
ES2DV R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 2A DO214AA
7.614
-
Standard
200V
2A
900mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
20ns
5µA @ 200V
25pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
SKL13B R5G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 1A DO214AA
2.142
-
Schottky
30V
1A
390mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 30V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 125°C
SKL13BHR5G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 1A DO214AA
6.624
Automotive, AEC-Q101
Schottky
30V
1A
390mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 30V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 125°C
SS310L R3G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 3A SUB SMA
7.380
-
Schottky
100V
3A
850mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 100V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
SS310LHR3G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 3A SUB SMA
8.208
Automotive, AEC-Q101
Schottky
100V
3A
850mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 100V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RS3D V7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 3A DO214AB
6.858
-
Standard
200V
3A
-
Fast Recovery =< 500ns, > 200mA (Io)
150ns
10µA @ 200V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
RS3G V7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 3A DO214AB
7.722
-
Standard
400V
3A
-
Fast Recovery =< 500ns, > 200mA (Io)
150ns
10µA @ 400V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
SS310L RUG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 3A SUB SMA
3.240
-
Schottky
100V
3A
850mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 100V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
MUR190AHR0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 900V 1A DO204AL
8.514
Automotive, AEC-Q101
Standard
900V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 900V
15pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 175°C
FR305G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO201AD
4.428
-
Standard
600V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
250ns
5µA @ 600V
30pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
FR306G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 3A DO201AD
8.874
-
Standard
800V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 800V
30pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
FR307G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 3A DO201AD
4.446
-
Standard
-
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 1000V
30pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
ESH2BA M2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO214AC
7.434
-
Standard
100V
1A
900mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
1µA @ 200V
25pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 175°C
ESH2CA M2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 1A DO214AC
4.950
-
Standard
150V
1A
900mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
1µA @ 200V
25pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 175°C
ESH2DA M2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A DO214AC
6.750
-
Standard
200V
1A
900mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
1µA @ 200V
25pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 175°C
HS2K M4G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 2A DO214AA
2.106
-
Standard
800V
2A
1.7V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 800V
30pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
ES2DVHM4G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 2A DO214AA
5.976
Automotive, AEC-Q101
Standard
200V
2A
900mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
20ns
10µA @ 200V
25pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
SK32AHR3G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 20V 3A DO214AC
3.726
Automotive, AEC-Q101
Schottky
20V
3A
550mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 20V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
SK33AHR3G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO214AC
4.482
Automotive, AEC-Q101
Schottky
30V
3A
550mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 30V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
SK34AHR3G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 40V 3A DO214AC
2.898
Automotive, AEC-Q101
Schottky
40V
3A
550mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
SK35AHR3G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 50V 3A DO214AC
8.010
Automotive, AEC-Q101
Schottky
50V
3A
720mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 50V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
SK36AHR3G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 3A DO214AC
7.866
Automotive, AEC-Q101
Schottky
60V
3A
720mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 60V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
SK39AHR3G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 90V 3A DO214AC
2.124
Automotive, AEC-Q101
Schottky
90V
3A
850mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 90V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C