Taiwan Semiconductor Corporation Raddrizzatori - Singoli

Serie

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Tipo di diodo

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Tensione - Inversione CC (Vr) (Max)

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Corrente - Media Rettificata (Io)

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Tensione - Avanti (Vf) (Max) @ If

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Velocità

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Tempo di recupero inverso (trr)

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Corrente - Perdita inversa @ Vr

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Capacità @ Vr, F

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Tipo di montaggio

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Pacchetto / Custodia

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Pacchetto dispositivo fornitore

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Temperatura di esercizio - Giunzione

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Mostra filtri

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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli

ProduttoreTaiwan Semiconductor Corporation

Record 5.388

Pagina 59/180

Numero parte	Produttore	Descrizione	Disponibile	Serie	Tipo di diodo	Tensione - Inversione CC (Vr) (Max)	Corrente - Media Rettificata (Io)	Tensione - Avanti (Vf) (Max) @ If	Velocità	Tempo di recupero inverso (trr)	Corrente - Perdita inversa @ Vr	Capacità @ Vr, F	Tipo di montaggio	Pacchetto / Custodia	Pacchetto dispositivo fornitore	Temperatura di esercizio - Giunzione
MUR190A A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 900V 1A DO204AL	4.590	-	Standard	900V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 900V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 175°C
SRT115 A0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 1A TS-1	5.796	-	Schottky	150V	1A	900mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SK210A M2G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 2A DO214AC	3.492	-	Schottky	100V	2A	850mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SK29A M2G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 2A DO214AC	7.272	-	Schottky	90V	2A	850mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
ES1LD R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO214AC	8.082	-	Standard	200V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 200V	16pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
ES1LG R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO214AC	2.268	-	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	18pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
ES1LJ R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO214AC	4.122	-	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	18pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
S2K R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 2A DO214AA	2.124	-	Standard	800V	2A	1.15V @ 2A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	1µA @ 800V	30pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
ESH1B R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO214AC	7.128	-	Standard	100V	1A	900mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	15ns	1µA @ 100V	16pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 175°C
ESH1D R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO214AC	4.032	-	Standard	200V	1A	900mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	15ns	1µA @ 200V	16pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 175°C
RS2BAHR3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1.5A DO214AC	2.484	-	Standard	100V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 100V	50pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
RS2DAHR3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1.5A DO214AC	4.482	-	Standard	200V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	50pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SFT17G A1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 1A TS-1	8.334	-	Standard	500V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 500V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SFT18G A1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A TS-1	6.408	-	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SS210L R3G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 2A SUB SMA	7.902	-	Schottky	100V	2A	850mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS29L R3G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 2A SUB SMA	4.500	-	Schottky	90V	2A	850mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SFT15GHA1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 1A TS-1	8.370	Automotive, AEC-Q101	Standard	300V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 300V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SFT16GHA1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A TS-1	5.022	Automotive, AEC-Q101	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SFT15GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 1A TS-1	6.264	Automotive, AEC-Q101	Standard	300V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 300V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SFT16GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A TS-1	6.174	Automotive, AEC-Q101	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SFT17GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 1A TS-1	7.362	Automotive, AEC-Q101	Standard	500V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 500V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SFT18GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A TS-1	5.616	Automotive, AEC-Q101	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SRT115 R0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 1A TS-1	3.996	-	Schottky	150V	1A	900mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
HT15G A1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A TS-1	5.238	-	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 400V	15pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
HT15G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A TS-1	4.752	-	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 400V	15pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
HT16G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A TS-1	2.574	-	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 600V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
HS2AA M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1.5A DO214AC	7.650	-	Standard	50V	1.5A	1V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 50V	50pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
HS2BA M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1.5A DO214AC	5.148	-	Standard	100V	1.5A	1V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 100V	50pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
HS2DA M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1.5A DO214AC	5.166	-	Standard	200V	1.5A	1V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 200V	50pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
HS2FA M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 1.5A DO214AC	8.802	-	Standard	300V	1.5A	1V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 300V	50pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C

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