Taiwan Semiconductor Corporation Raddrizzatori - Singoli

Serie

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Tipo di diodo

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Tensione - Inversione CC (Vr) (Max)

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Corrente - Media Rettificata (Io)

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Tensione - Avanti (Vf) (Max) @ If

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Velocità

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Tempo di recupero inverso (trr)

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Corrente - Perdita inversa @ Vr

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Capacità @ Vr, F

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Tipo di montaggio

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Pacchetto / Custodia

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Pacchetto dispositivo fornitore

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Temperatura di esercizio - Giunzione

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Mostra filtri

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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli

ProduttoreTaiwan Semiconductor Corporation

Record 5.388

Pagina 31/180

Numero parte	Produttore	Descrizione	Disponibile	Serie	Tipo di diodo	Tensione - Inversione CC (Vr) (Max)	Corrente - Media Rettificata (Io)	Tensione - Avanti (Vf) (Max) @ If	Velocità	Tempo di recupero inverso (trr)	Corrente - Perdita inversa @ Vr	Capacità @ Vr, F	Tipo di montaggio	Pacchetto / Custodia	Pacchetto dispositivo fornitore	Temperatura di esercizio - Giunzione
S1DFS MXG	Taiwan Semiconductor Corporation	DIODE, 1A, 200V, SOD-128	4.968	-	Standard	200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 200V	9pF @ 4V, 1MHz	Surface Mount	SOD-128	SOD-128	-55°C ~ 150°C
S1DFSHMXG	Taiwan Semiconductor Corporation	DIODE, 1A, 200V, AEC-Q101, SOD-1	3.526	Automotive, AEC-Q101	Standard	200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 200V	9pF @ 4V, 1MHz	Surface Mount	SOD-128	SOD-128	-55°C ~ 150°C
S1GFS MXG	Taiwan Semiconductor Corporation	DIODE, 1A, 400V, SOD-128	3.096	-	Standard	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 400V	9pF @ 4V, 1MHz	Surface Mount	SOD-128	SOD-128	-55°C ~ 150°C
S1GFSHMXG	Taiwan Semiconductor Corporation	DIODE, 1A, 400V, AEC-Q101, SOD-1	8.298	Automotive, AEC-Q101	Standard	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 400V	9pF @ 4V, 1MHz	Surface Mount	SOD-128	SOD-128	-55°C ~ 150°C
S1JFS MXG	Taiwan Semiconductor Corporation	DIODE, 1A, 600V, SOD-128	8.208	-	Standard	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 600V	9pF @ 4V, 1MHz	Surface Mount	SOD-128	SOD-128	-55°C ~ 150°C
S1JFSHMXG	Taiwan Semiconductor Corporation	DIODE, 1A, 600V, AEC-Q101, SOD-1	3.474	Automotive, AEC-Q101	Standard	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 600V	9pF @ 4V, 1MHz	Surface Mount	SOD-128	SOD-128	-55°C ~ 150°C
S1KFS MXG	Taiwan Semiconductor Corporation	DIODE, 1A, 800V, SOD-128	5.832	-	Standard	800V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 800V	9pF @ 4V, 1MHz	Surface Mount	SOD-128	SOD-128	-55°C ~ 150°C
S1KFSHMXG	Taiwan Semiconductor Corporation	DIODE, 1A, 800V, AEC-Q101, SOD-1	2.898	Automotive, AEC-Q101	Standard	800V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 800V	9pF @ 4V, 1MHz	Surface Mount	SOD-128	SOD-128	-55°C ~ 150°C
RS1ML RQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 800MA SUB SMA	3.744	-	Standard	-	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 1000V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
S1KL RQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A SUB SMA	7.560	-	Standard	800V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 800V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
S1KLHRQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A SUB SMA	8.100	Automotive, AEC-Q101	Standard	800V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 800V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
S1ML RQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 1000V 1A SUB SMA	7.740	-	Standard	-	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 1000V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
S1MLHRQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 1000V 1A SUB SMA	3.618	Automotive, AEC-Q101	Standard	-	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 1000V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
S1DL RTG	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A SUB SMA	2.106	-	Standard	200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 200V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
S1JL RTG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A SUB SMA	7.020	-	Standard	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 600V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
S1BL RUG	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A SUB SMA	4.356	-	Standard	100V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 100V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
S1DL RUG	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A SUB SMA	3.096	-	Standard	200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 200V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
S1GL RUG	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A SUB SMA	8.964	-	Standard	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 400V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
S1JL RUG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A SUB SMA	7.074	-	Standard	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 600V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
S1JL RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A SUB SMA	7.254	-	Standard	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 600V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
SR004 A0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 500MA DO204AL	4.482	-	Schottky	40V	500mA	550mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	110pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 125°C
1N5819HA0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 1A DO204AL	4.086	Automotive, AEC-Q101	Schottky	40V	1A	600mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 40V	55pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 125°C
SR103HA0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 1A DO204AL	5.508	Automotive, AEC-Q101	Schottky	30V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 125°C
SR104HA0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 1A DO204AL	2.358	Automotive, AEC-Q101	Schottky	40V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 125°C
SR103HB0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 1A DO204AL	4.572	Automotive, AEC-Q101	Schottky	30V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 125°C
1N5817 R0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 1A DO204AL	8.046	-	Schottky	20V	1A	450mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 20V	55pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 125°C
1N5817HR0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 1A DO204AL	7.146	Automotive, AEC-Q101	Schottky	20V	1A	450mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 20V	55pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 125°C
1N5818 R0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 1A DO204AL	5.994	-	Schottky	30V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 30V	55pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 125°C
1N5818HR0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 1A DO204AL	3.672	Automotive, AEC-Q101	Schottky	30V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 30V	55pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 125°C
1N5819 R0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 1A DO204AL	2.592	-	Schottky	40V	1A	600mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 40V	55pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 125°C

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