Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 986/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
TRENCH 40<-<100V |
3.672 |
|
OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 60V | 22A (Tc) | 10V | 65mOhm @ 22A, 10V | 4V @ 1.04mA | 39nC @ 10V | ±20V | 1600pF @ 30V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
TRENCH 40<-<100V |
3.636 |
|
OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 60V | 16.4A (Tc) | 10V | 90mOhm @ 16.4A, 10V | 4V @ 710µA | 27nC @ 10V | ±20V | 1100pF @ 30V | - | 63W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
TRENCH 40<-<100V |
5.562 |
|
OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 60V | 6.5A (Tc) | 4.5V, 10V | 250mOhm @ 6.5A, 10V | 2V @ 270µA | 13.8nC @ 10V | ±20V | 420pF @ 30V | - | 28W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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|
Infineon Technologies |
TRENCH 40<-<100V |
2.412 |
|
OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 60V | 6.5A (Tc) | 10V | 250mOhm @ 6.5A, 10V | 4V @ 270µA | 10.6nC @ 10V | ±20V | 420pF @ 30V | - | 28W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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|
Infineon Technologies |
TRENCH 40<-<100V |
7.488 |
|
OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 60V | 4.3A (Tc) | 10V | 400mOhm @ 4.3A, 10V | 4V @ 166µA | 6.7nC @ 10V | ±20V | 260pF @ 30V | - | 19W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET P-CHANNEL |
3.888 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Renesas Electronics America |
MOSFET P-CH 30V TSMT |
7.812 |
|
- | P-Channel | MOSFET (Metal Oxide) | 30V | 2.5A (Ta) | 2.5V, 4.5V | 119mOhm @ 1A, 4.5V | 1.5V @ 1mA | 5.2nC @ 4.5V | ±12V | 450pF @ 10V | - | 200mW (Ta) | 150°C | Surface Mount | SC-96-3, Thin Mini Mold | SC-96 |
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Renesas Electronics America |
TRANS N-CH CMPAK-4 |
5.328 |
|
- | N-Channel | MOSFET (Metal Oxide) | 43V | 1A (Ta) | 4V, 10V | 195mOhm @ 500mA, 10V | 2.5V @ 1mA | 4nC @ 10V | ±20V | 230pF @ 10V | - | 200mW (Ta) | 150°C | Surface Mount | SC-96-3, Thin Mini Mold | SC-96 |
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Renesas Electronics America |
MOSFET N-CH HS SW TO-263 |
2.718 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Renesas Electronics America |
MOSFET N-CH HS SW TO-263 |
7.956 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
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Renesas Electronics America |
MOSFET P-CH SOP8 |
7.776 |
|
- | P-Channel | MOSFET (Metal Oxide) | 30V | 14A (Ta) | 4.5V, 10V | 12mOhm @ 7A, 10V | 2.5V @ 1mA | 64nC @ 10V | ±20V | 3500pF @ 10V | - | 2.5W (Ta) | 150°C | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Renesas Electronics America |
MOSFET P-CH SMD |
7.254 |
|
- | P-Channel | MOSFET (Metal Oxide) | 12V | 4A (Ta) | 1.8V, 4.5V | 52mOhm @ 1.5A, 4.5V | 1.2V @ 1mA | 16nC @ 4.5V | ±8V | 1380pF @ 10V | - | 900mW (Ta) | 150°C | Surface Mount | 6-CMFPAK | 6-SMD, Flat Leads |
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Renesas Electronics America |
MOSFET P-CH SOP8 |
3.436 |
|
- | P-Channel | MOSFET (Metal Oxide) | 30V | 40A (Ta) | 4.5V, 10V | 4.5mOhm @ 20A, 10V | 2.5V @ 1mA | 125nC @ 10V | +10V, -20V | 5600pF @ 10V | - | 30W (Tc) | 150°C | Surface Mount | 5-LFPAK | SC-100, SOT-669 |
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Renesas Electronics America |
MOSFET N-CH SOP8 |
2.088 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 7A (Ta) | 4V, 10V | 38mOhm @ 4A, 10V | 2.2V @ 1mA | - | ±20V | 740pF @ 10V | - | 2.5W (Ta) | 150°C | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Renesas Electronics America |
MOSFET N-CH LFPAK-5 |
5.868 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 55A (Ta) | 4.5V, 10V | 3.3mOhm @ 27.5A, 10V | 2.5V @ 1mA | 33nC @ 4.5V | ±20V | 5180pF @ 10V | - | 30W (Tc) | 150°C | Surface Mount | 5-LFPAK | SC-100, SOT-669 |
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Renesas Electronics America |
MOSFET N-CH LFPAK-5 |
8.658 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 45A (Ta) | 4.5V, 10V | 3.8mOhm @ 22.5A, 10V | 2.5V @ 1mA | 27nC @ 4.5V | ±20V | 4400pF @ 10V | - | 25W (Tc) | 150°C | Surface Mount | 5-LFPAK | SC-100, SOT-669 |
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Renesas Electronics America |
MOSFET N-CH LFPAK-5 |
4.446 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 30A (Ta) | 4.5V, 10V | 7.9mOhm @ 15A, 10V | 2.5V @ 1mA | 11nC @ 4.5V | ±20V | 1730pF @ 10V | - | 15W (Tc) | 150°C | Surface Mount | 5-LFPAK | SC-100, SOT-669 |
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Renesas Electronics America |
MOSFET N-CH LFPAK-5 |
4.410 |
|
- | N-Channel | MOSFET (Metal Oxide) | 40V | 45A (Ta) | 7V, 10V | 4.2mOhm @ 22.5A, 10V | 3V @ 1mA | 62nC @ 10V | ±20V | 4650pF @ 10V | - | 30W (Tc) | 150°C | Surface Mount | 5-LFPAK | SC-100, SOT-669 |
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Renesas Electronics America |
MOSFET N-CH LFPAK-5 |
3.454 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 25A (Ta) | 8V, 10V | 15mOhm @ 12.5A, 10V | 6V @ 20mA | 61nC @ 10V | ±20V | 4350pF @ 10V | - | 30W (Tc) | 150°C | Surface Mount | 5-LFPAK | SC-100, SOT-669 |
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Renesas Electronics America |
MOSFET N-PAK WPAK |
3.096 |
|
- | N-Channel | MOSFET (Metal Oxide) | 150V | 10A (Ta) | 10V | 190mOhm @ 5A, 10V | 4.5V @ 1mA | 9.7nC @ 10V | ±30V | 430pF @ 25V | - | 20W (Tc) | 150°C | Surface Mount | 8-WPAK | 8-PowerWDFN |
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Renesas Electronics America |
MOSFET N-PAK 8SOP |
6.228 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 8A (Ta) | 4.5V, 10V | 30mOhm @ 4A, 10V | 2.5V @ 1mA | 10nC @ 4.5V | ±20V | 1210pF @ 10V | - | 2W (Ta) | 150°C | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Renesas Electronics America |
MOSFET N-PAK 8SOP |
4.212 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 30A (Ta) | 4.5V, 10V | 12mOhm @ 15A, 10V | 2.5V @ 1mA | 25nC @ 4.5V | ±20V | 3600pF @ 10V | - | 23W (Tc) | 150°C | Surface Mount | 5-LFPAK | SC-100, SOT-669 |
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Renesas Electronics America |
MOSFET N-PAK 8SOP |
2.178 |
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- | N-Channel | MOSFET (Metal Oxide) | 80V | 30A (Ta) | 4.5V, 10V | 12mOhm @ 15A, 10V | 2.3V @ 1mA | 60nC @ 10V | ±20V | 3520pF @ 10V | - | 25W (Tc) | 150°C | Surface Mount | 5-LFPAK | SC-100, SOT-669 |
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Renesas Electronics America |
MOSFET P-CH 8SOP |
2.556 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 12A | - | - | - | - | ±20V | - | - | 2W | - | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Renesas Electronics America |
MOSFET N-CH 30V 60A 5-LFPAK |
3.888 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 60A (Ta) | 4.5V, 10V | 2.8mOhm @ 30A, 10V | 2.5V @ 1mA | 32nC @ 10V | +16V, -12V | 5000pF @ 10V | - | 65W (Tc) | 150°C | Surface Mount | 5-LFPAK | SC-100, SOT-669 |
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Renesas Electronics America |
MOSFET N-CH 30V 30A 5-LFPAK |
4.896 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 30A (Ta) | 4.5V, 10V | 8mOhm @ 15A, 10V | 2.5V @ 1mA | 8nC @ 4.5V | +16V, -12V | 1250pF @ 10V | - | 45W (Tc) | 150°C | Surface Mount | 5-LFPAK | SC-100, SOT-669 |
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Renesas Electronics America |
MOSFET N-CH W-PAK |
8.802 |
|
- | N-Channel | MOSFET (Metal Oxide) | 150V | 25A (Ta) | 10V | 48mOhm @ 12.5A, 10V | 4.5V @ 1mA | 38nC @ 10V | ±30V | 2400pF @ 25V | - | 30W (Tc) | 150°C | Surface Mount | 8-WPAK | 8-PowerWDFN |
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Renesas Electronics America |
MOSFET N-CH W-PAK |
8.208 |
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- | N-Channel | MOSFET (Metal Oxide) | 150V | 25A (Ta) | 10V | 58mOhm @ 12.5A, 10V | 4.5V @ 1mA | 20nC @ 10V | ±30V | 1250pF @ 25V | - | 30W (Tc) | 150°C | Surface Mount | 8-WPAK | 8-PowerWDFN |
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Renesas Electronics America |
MOSFET N-CH W-PAK |
5.562 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 20A (Ta) | 10V | 69mOhm @ 10A, 10V | 4.5V @ 1mA | 38nC @ 10V | ±30V | 2400pF @ 25V | - | 30W (Tc) | 150°C | Surface Mount | 8-WPAK | 8-PowerWDFN |
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Renesas Electronics America |
MOSFET N-CH W-PAK |
3.544 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 20A (Ta) | 10V | 85mOhm @ 10A, 10V | 4.5V @ 1mA | 19nC @ 10V | ±30V | 1250pF @ 25V | - | 30W (Tc) | 150°C | Surface Mount | 8-WPAK | 8-PowerWDFN |