Transistor - FET, MOSFET - Singolo
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Mostra filtri
Ripristina filtri
Applica filtri
CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 965/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IXYS |
MOSFET N-CH 200V 58A TO268 |
7.956 |
|
HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 200V | 58A (Tc) | 10V | 40mOhm @ 29A, 10V | 4V @ 4mA | 140nC @ 10V | ±20V | 3600pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 (IXFT) | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
|
|
|
Infineon Technologies |
MOSFET N-CH BARE DIE |
5.022 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH BARE DIE |
5.292 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH BARE DIE |
2.016 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH BARE DIE |
7.488 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH BARE DIE |
8.766 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
TRANSISTOR N-CH |
4.842 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH 120V SAWN WAFER |
7.164 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH 80V SAWN WAFER |
2.106 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Diodes Incorporated |
MOSFET P-CH 30V 40A POWERDI3333 |
7.434 |
|
- | P-Channel | MOSFET (Metal Oxide) | 30V | 40A (Tc) | 4.5V, 10V | 10mOhm @ 11.5A, 10V | 3V @ 250µA | 41nC @ 10V | ±25V | 2246pF @ 15V | - | 31W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
|
|
|
Diodes Incorporated |
MOSFET P-CH 30V 40A POWERDI3333 |
7.542 |
|
- | P-Channel | MOSFET (Metal Oxide) | 30V | 40A (Tc) | 4.5V, 10V | 10mOhm @ 11.5A, 10V | 3V @ 250µA | 41nC @ 10V | ±25V | 2246pF @ 15V | - | 31W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
|
|
|
ON Semiconductor |
MOSFET N-CHANNEL 500V 4A TO252 |
5.724 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 4A (Tc) | 10V | 1.4Ohm @ 2A, 10V | 4V @ 250µA | 24nC @ 10V | ±30V | 625pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Taiwan Semiconductor Corporation |
MOSFET N-CH 60V 100A 8PDFN |
2.100 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 10V | 5.2mOhm @ 20A, 10V | 4V @ 250µA | 50nC @ 10V | ±25V | 3686pF @ 30V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |
|
|
|
Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 60V 10A TO252 |
4.644 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 10A (Ta) | 4V, 10V | 65mOhm @ 10A, 10V | 3V @ 250µA | 10.5nC @ 4.5V | ±20V | 1100pF @ 30V | - | 45W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Taiwan Semiconductor Corporation |
MOSFET N-CH 600V 10A ITO220 |
5.832 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 750mOhm @ 5A, 10V | 4V @ 250µA | 39nC @ 10V | ±30V | 1820pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220AB | TO-220-3 Full Pack, Isolated Tab |
|
|
|
Taiwan Semiconductor Corporation |
MOSFET N-CH 100V 58A 8PDFN |
8.550 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 58A (Tc) | 10V | 12mOhm @ 30A, 10V | 4V @ 250µA | 145nC @ 10V | ±20V | 3902pF @ 30V | - | 36W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |
|
|
|
Taiwan Semiconductor Corporation |
MOSFET N-CH 500V 13A ITO220 |
7.920 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 13A (Tc) | 10V | 480mOhm @ 6.5A, 10V | 4V @ 250µA | 31nC @ 10V | ±30V | 1965pF @ 25V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220AB | TO-220-3 Full Pack, Isolated Tab |
|
|
|
Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 500V 13A TO220 |
2.934 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 13A (Tc) | 10V | 480mOhm @ 6.5A, 10V | 4V @ 250µA | 31nC @ 10V | ±30V | 1965pF @ 25V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
|
|
|
Taiwan Semiconductor Corporation |
MOSFET N-CH 450V 500MA TO92 |
7.686 |
|
- | N-Channel | MOSFET (Metal Oxide) | 450V | 500mA (Tc) | 10V | 4.25Ohm @ 250mA, 10V | 4.25V @ 250µA | 6.5nC @ 10V | ±30V | 235pF @ 25V | - | 2W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
|
|
|
Taiwan Semiconductor Corporation |
MOSFET N-CH 450V 500MA TO92 |
8.334 |
|
- | N-Channel | MOSFET (Metal Oxide) | 450V | 500mA (Tc) | 10V | 4.25Ohm @ 250mA, 10V | 4.25V @ 250µA | 6.5nC @ 10V | ±30V | 235pF @ 25V | - | 2W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92 | TO-226-3, TO-92-3 (TO-226AA) |
|
|
|
Taiwan Semiconductor Corporation |
MOSFET N-CH 450V 500MA SOT223 |
5.580 |
|
- | N-Channel | MOSFET (Metal Oxide) | 450V | 500mA (Tc) | 10V | 4.25Ohm @ 250mA, 10V | 4.25V @ 250µA | 6.5nC @ 10V | ±30V | 235pF @ 25V | - | 2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
|
|
|
Taiwan Semiconductor Corporation |
MOSFET N-CH 450V 500MA 8SOP |
6.156 |
|
- | N-Channel | MOSFET (Metal Oxide) | 450V | 500mA (Tc) | 10V | 4.25Ohm @ 250mA, 10V | 4.9V @ 250mA | 6.5nC @ 10V | ±50V | 185pF @ 25V | - | 900mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
|
|
|
Taiwan Semiconductor Corporation |
MOSFET N-CH 600V 500MA TO92 |
3.526 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 500mA (Tc) | 10V | 10Ohm @ 250mA, 10V | 4.5V @ 250µA | 6.1nC @ 10V | ±30V | 138pF @ 25V | - | 2.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
|
|
|
Taiwan Semiconductor Corporation |
MOSFET N-CH 600V 500MA TO92 |
7.866 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 500mA (Tc) | 10V | 10Ohm @ 250mA, 10V | 4.5V @ 250µA | 6.1nC @ 10V | ±30V | 138pF @ 25V | - | 2.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92 | TO-226-3, TO-92-3 (TO-226AA) |
|
|
|
Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 60V 210A TO220 |
8.712 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 210A (Tc) | 10V | 3.1mOhm @ 90A, 10V | 4V @ 250µA | 160nC @ 10V | ±20V | 7900pF @ 30V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
|
|
|
Taiwan Semiconductor Corporation |
MOSFET P-CHANNEL 20V 2.8A SOT23 |
7.866 |
|
- | P-Channel | MOSFET (Metal Oxide) | 20V | 2.8A (Tc) | 2.5V, 4.5V | 130mOhm @ 2.8A, 4.5V | 950mV @ 250µA | 4.5nC @ 4.5V | ±8V | 447pF @ 6V | - | 900mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
|
|
|
Taiwan Semiconductor Corporation |
MOSFET P-CHANNEL 20V 4A SOT23 |
7.542 |
|
- | P-Channel | MOSFET (Metal Oxide) | 20V | 4A (Ta) | 2.5V, 4.5V | 55mOhm @ 4A, 4.5V | 1.4V @ 250µA | 6nC @ 4.5V | ±8V | 640pF @ 6V | - | 900mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
|
|
|
Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 60V 300MA TO92 |
5.022 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 300mA (Ta) | 5V, 10V | 5Ohm @ 100mA, 10V | 2.5V @ 250µA | 0.4nC @ 4.5V | ±20V | 7.32pF @ 25V | - | 400mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
|
|
|
Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 600V 2A TO251 |
5.454 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 2A (Tc) | 10V | 4.4Ohm @ 1A, 10V | 4.5V @ 250µA | 9.4nC @ 10V | ±30V | 249pF @ 25V | - | 44W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251 (IPAK) | TO-251-3 Short Leads, IPak, TO-251AA |
|
|
|
Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 600V 2A TO252 |
5.040 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 2A (Tc) | 10V | 4.4Ohm @ 1A, 10V | 4.5V @ 250µA | 9.4nC @ 10V | ±30V | 249pF @ 25V | - | 44W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |