Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 944/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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ON Semiconductor |
MOSFET N-CH 60V 20A U8FL |
8.910 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | - | 4.5V, 10V | 20.5mOhm @ 10A, 10V | 2.5V @ 250µA | 16nC @ 10V | ±20V | 850pF @ 25V | - | 3.2W (Ta), 57W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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ON Semiconductor |
MOSFET N-CH 60V 20A U8FL |
3.960 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | - | 4.5V, 10V | 20.5mOhm @ 10A, 10V | 2.5V @ 250µA | 16nC @ 10V | ±20V | 850pF @ 25V | - | 3.2W (Ta), 57W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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Infineon Technologies |
MOSFET N-CH 500V 7.6A TO-262 |
4.284 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 500V | 7.6A (Tc) | 10V | 600mOhm @ 4.6A, 10V | 3.9V @ 350µA | 32nC @ 10V | ±20V | 750pF @ 25V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 600V 11A TO-262 |
4.122 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 380mOhm @ 7A, 10V | 3.9V @ 500µA | 60nC @ 10V | ±20V | 1200pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 650V 11A TO-262 |
6.498 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 11A (Tc) | 10V | 380mOhm @ 7A, 10V | 3.9V @ 500µA | 60nC @ 10V | ±20V | 1200pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 500V 11.6A TO-262 |
8.766 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 500V | 11.6A (Tc) | 10V | 380mOhm @ 7A, 10V | 3.9V @ 500µA | 49nC @ 10V | ±20V | 1200pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 650V 15A TO262-3 |
5.112 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 15A (Tc) | 10V | 280mOhm @ 9.4A, 10V | 3.9V @ 675µA | 63nC @ 10V | ±20V | 1600pF @ 25V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 600V 20.7A TO-262 |
7.488 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 20.7A (Tc) | 10V | 190mOhm @ 13.1A, 10V | 3.9V @ 1mA | 114nC @ 10V | ±20V | 2400pF @ 25V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 500V 21A I2PAK |
8.964 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 500V | 21A (Tc) | 10V | 190mOhm @ 13.1A, 10V | 3.9V @ 1mA | 95nC @ 10V | ±20V | 2400pF @ 25V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 600V 11A TO-220 |
7.776 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 440mOhm @ 7A, 10V | 5V @ 500µA | 64nC @ 10V | ±20V | 1200pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 600V 7A TO252 |
7.416 |
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CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 600V | 7A (Tc) | 10V | 650mOhm @ 2.4A, 10V | 3.5V @ 200µA | 20.5nC @ 10V | ±20V | 440pF @ 100V | - | 82W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 700V 10.5A TO-251 |
5.436 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 700V | 10.5A (Tc) | 10V | 600mOhm @ 1A, 10V | 3.5V @ 0.21mA | 22nC @ 10V | ±20V | 474pF @ 100V | Super Junction | 86W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Stub Leads, IPak |
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ON Semiconductor |
MOSFET N-CH 24V 6A EFCP |
4.932 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | EFCP1313-4CC-037 | 4-XFBGA |
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ON Semiconductor |
MOSFET N-CH 30V 3.5A SOT563 |
5.130 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 3.5A (Ta) | 4V, 10V | 72mOhm @ 1.5A, 10V | 2.6V @ 1mA | 5.6nC @ 10V | ±20V | 280pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | SOT-563/SCH6 | SOT-563, SOT-666 |
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ON Semiconductor |
MOSFET N-CH 20V 3.5A SOT563 |
7.956 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 3.5A (Ta) | 1.8V, 4.5V | 64mOhm @ 1.5A, 4.5V | 1.3V @ 1mA | 2.8nC @ 4.5V | ±10V | 260pF @ 10V | - | 800mW (Ta) | 150°C (TJ) | Surface Mount | SOT-563/SCH6 | SOT-563, SOT-666 |
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ON Semiconductor |
MOSFET P-CH 20V 2.5A SOT563 |
3.258 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 2.5A (Ta) | 1.8V, 4.5V | 95mOhm @ 1.5A, 4.5V | 1.3V @ 1mA | 4.6nC @ 4.5V | ±10V | 375pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | SOT-563/SCH6 | SOT-563, SOT-666 |
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ON Semiconductor |
MOSFET N-CH 30V 1.8A SOT563 |
7.686 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 1.8A (Ta) | 4V, 10V | 180mOhm @ 900mA, 10V | 2.6V @ 1mA | 2nC @ 10V | ±20V | 88pF @ 10V | - | 800mW (Ta) | 150°C (TJ) | Surface Mount | SOT-563/SCH6 | SOT-563, SOT-666 |
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ON Semiconductor |
MOSFET P-CH 20V 1.5A SOT563 |
6.228 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 1.5A (Ta) | 1.8V, 4.5V | 241mOhm @ 750mA, 4.5V | 1.4V @ 1mA | 1.7nC @ 4.5V | ±10V | 120pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | SOT-563/SCH6 | SOT-563, SOT-666 |
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ON Semiconductor |
MOSFET P-CH 12V 3.5A CPH6 |
5.652 |
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- | P-Channel | MOSFET (Metal Oxide) | 12V | 3.5A (Ta) | 1.8V, 4.5V | 70mOhm @ 1.5A, 4.5V | 1.4V @ 1mA | 5.6nC @ 4.5V | ±10V | 405pF @ 6V | - | 1.6W (Ta) | 150°C (TJ) | Surface Mount | 6-CPH | SOT-23-6 Thin, TSOT-23-6 |
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ON Semiconductor |
MOSFET P-CH 20V 1.5A MCPH |
6.120 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 1.5A (Ta) | 1.8V, 4.5V | 266mOhm @ 750mA, 4.5V | 1.4V @ 1mA | 1.7nC @ 4.5V | ±10V | 120pF @ 10V | - | 800mW (Ta) | 150°C (TJ) | Surface Mount | SC-88AFL/MCPH5 | 5-SMD, Flat Leads |
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ON Semiconductor |
MOSFET P-CH 12V 2A MCPH3 |
2.250 |
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- | P-Channel | MOSFET (Metal Oxide) | 12V | 2A (Ta) | 1.8V, 4.5V | 198mOhm @ 1A, 4.5V | 900mV @ 1mA | 2.3nC @ 4.5V | ±9V | 170pF @ 6V | - | 800mW (Ta) | 150°C (TJ) | Surface Mount | SC-70FL/MCPH3 | 3-SMD, Flat Leads |
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Infineon Technologies |
MOSFET N-CH 30V 80A TO-220-3 |
3.348 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 80A (Tc) | 4.5V, 10V | 3.4mOhm @ 30A, 10V | 2.2V @ 250µA | 25nC @ 4.5V | ±20V | 5300pF @ 15V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 500V 10A TO220-3 |
7.380 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 500V | 10A (Tc) | 10V | 350mOhm @ 5.6A, 10V | 3.5V @ 370µA | 25nC @ 10V | ±20V | 1020pF @ 100V | - | 89W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 30V 17A |
8.964 |
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AlphaMOS | N-Channel | MOSFET (Metal Oxide) | 30V | 17A (Ta), 50A (Tc) | - | 5.4mOhm @ 20A, 10V | 2.4V @ 250µA | 18nC @ 10V | - | 1400pF @ 15V | - | - | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Alpha & Omega Semiconductor |
MOSFET P-CH 30V 2.6A SOT23-3 |
3.726 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 2.6A (Ta) | 4.5V, 10V | 130mOhm @ 2.6A, 10V | 3V @ 250µA | 9nC @ 10V | ±20V | 370pF @ 15V | - | 1.4W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3L | TO-236-3, SC-59, SOT-23-3 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 30V 19A 8SOIC |
4.410 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 19A (Ta) | 4.5V, 10V | 5.3mOhm @ 19A, 10V | 2.3V @ 250µA | 35nC @ 10V | ±20V | 2200pF @ 15V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Alpha & Omega Semiconductor |
MOSFET P-CH 30V 6A 8SOIC |
6.984 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 6A (Ta) | 2.5V, 10V | 46mOhm @ 6.1A, 10V | 1.3V @ 250µA | 11.3nC @ 4.5V | ±12V | 1128pF @ 15V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Alpha & Omega Semiconductor |
MOSFET N-CH 30V 8.5A 8-SOIC |
3.870 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 8.5A (Ta) | 2.5V, 10V | 24mOhm @ 8.5A, 10V | 1.5V @ 250µA | 12nC @ 4.5V | ±12V | 1100pF @ 15V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Alpha & Omega Semiconductor |
MOSFET P-CH 30V 6A |
6.354 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 6A (Ta) | 4.5V, 10V | 50mOhm @ 6A, 10V | 2.4V @ 250µA | 11nC @ 10V | ±20V | 520pF @ 15V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Alpha & Omega Semiconductor |
MOSFET P-CH 30V 12A 8SOIC |
2.628 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 12A (Ta) | 10V | 13mOhm @ 12A, 20V | 2.8V @ 250µA | 36nC @ 10V | ±25V | 2600pF @ 15V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | - | - |