Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 940/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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Infineon Technologies |
MOSFET N-CH 80V 80A TO220-3 |
2.700 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 80A (Tc) | 6V, 10V | 5.7mOhm @ 80A, 10V | 3.5V @ 90µA | 69nC @ 10V | ±20V | 4750pF @ 40V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 60V 80A TO220-3 |
4.140 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 80A (Tc) | 10V | 5.7mOhm @ 80A, 10V | 4V @ 58µA | 82nC @ 10V | ±20V | 6600pF @ 30V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 60V 80A TO220-3 |
6.066 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 80A (Tc) | 4.5V, 10V | 5mOhm @ 80A, 10V | 2.2V @ 58µA | 50nC @ 4.5V | ±20V | 8400pF @ 30V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V 100A TO220-3 |
7.002 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 100A (Tc) | 6V, 10V | 4.5mOhm @ 100A, 10V | 3.5V @ 150µA | 117nC @ 10V | ±20V | 8410pF @ 50V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 60V 90A TO220-3 |
2.844 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 90A (Tc) | 10V | 4mOhm @ 90A, 10V | 4V @ 90µA | 98nC @ 10V | ±20V | 11000pF @ 30V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 80V 100A TO220-3 |
5.724 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 100A (Tc) | 6V, 10V | 3.75mOhm @ 100A, 10V | 3.5V @ 155µA | 117nC @ 10V | ±20V | 8110pF @ 40V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 60V 120A TO220-3 |
5.670 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 3.2mOhm @ 100A, 10V | 4V @ 118µA | 165nC @ 10V | ±20V | 13000pF @ 30V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V 100A TO220-3 |
4.230 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 100A (Tc) | 6V, 10V | 3mOhm @ 100A, 10V | 3.5V @ 275µA | 206nC @ 10V | ±20V | 14800pF @ 50V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 60V 120A TO220-3 |
7.794 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 2.4mOhm @ 100A, 10V | 4V @ 196µA | 275nC @ 10V | ±20V | 23000pF @ 30V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET COOL MOS SAWED WAFER |
4.032 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 600V 16.8A 3TO263 |
5.400 |
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CoolMOS™ P6 | N-Channel | MOSFET (Metal Oxide) | 600V | 16.8A (Tc) | 10V | 230mOhm @ 6.4A, 10V | 4.5V @ 530µA | 31nC @ 10V | ±20V | 1450pF @ 100V | - | 126W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET P-CH 30V 1.6A CPH3 |
3.186 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 1.6A (Ta) | 4V, 10V | 303mOhm @ 800mA, 10V | 2.6V @ 1mA | 2.2nC @ 10V | ±20V | 82pF @ 10V | - | 900mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 3-CPH | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET P-CH 12V 3A MCPH3 |
3.312 |
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- | P-Channel | MOSFET (Metal Oxide) | 12V | 3A (Ta) | 1.8V, 4V | 70mOhm @ 1.5A, 4.5V | 1.4V @ 1mA | 5.6nC @ 4.5V | ±8V | 405pF @ 6V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | SC-70FL/MCPH3 | 3-SMD, Flat Leads |
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ON Semiconductor |
MOSFET P-CH 30V 3.5A MCPH6 |
6.300 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 3.5A (Ta) | 4V, 10V | 98mOhm @ 1.5A, 10V | 2.6V @ 1mA | 5nC @ 10V | ±20V | 250pF @ 10V | - | 1.5W (Ta) | 150°C (TJ) | Surface Mount | SC-88FL/MCPH6 | 6-SMD, Flat Leads |
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ON Semiconductor |
MOSFET P-CH 30V 2A MCPH6 |
4.464 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 2A (Ta) | 4V, 10V | 150mOhm @ 1A, 10V | 2.6V @ 1mA | 3.9nC @ 10V | ±20V | 172pF @ 10V | - | 800mW (Ta) | 150°C (TJ) | Surface Mount | SC-88FL/MCPH6 | 6-SMD, Flat Leads |
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ON Semiconductor |
MOSFET N-CH 20V 5.5A MCPH6 |
2.178 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 5.5A (Ta) | 1.8V, 4.5V | 38mOhm @ 2A, 4.5V | 1.3V @ 1mA | 5.1nC @ 4.5V | ±12V | 410pF @ 10V | - | 1.5W (Ta) | 150°C (TJ) | Surface Mount | SC-88FL/MCPH6 | 6-SMD, Flat Leads |
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ON Semiconductor |
MOSFET N-CH 35V 2.5A MCPH6 |
8.082 |
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- | N-Channel | MOSFET (Metal Oxide) | 35V | 2.5A (Ta) | 4V, 10V | 98mOhm @ 1.5A, 10V | 2.6V @ 1mA | 4nC @ 10V | ±20V | 186pF @ 20V | - | 800mW (Ta) | 150°C (TJ) | Surface Mount | SC-88FL/MCPH6 | 6-SMD, Flat Leads |
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ON Semiconductor |
MOSFET P-CH 12V 3A SCH6 |
3.366 |
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- | P-Channel | MOSFET (Metal Oxide) | 12V | 3A (Ta) | 1.5V, 4.5V | 84mOhm @ 1.5A, 4.5V | 1.3V @ 1mA | 5.6nC @ 4.5V | ±10V | 405pF @ 6V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | SOT-563/SCH6 | SOT-563, SOT-666 |
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ON Semiconductor |
MOSFET P-CH 30V 2A SOT563 |
7.056 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 2A (Ta) | 4V, 10V | 150mOhm @ 1A, 10V | 2.6V @ 1mA | 3.9nC @ 10V | ±20V | 172pF @ 10V | - | 800mW (Ta) | 150°C (TJ) | Surface Mount | SOT-563/SCH6 | SOT-563, SOT-666 |
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ON Semiconductor |
MOSFET N-CH 20V 2A SCH6 |
5.256 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 2A (Ta) | 1.8V, 4.5V | 125mOhm @ 1A, 4.5V | 1.3V @ 1mA | 1.8nC @ 4.5V | ±12V | 128pF @ 10V | - | 800mW (Ta) | 150°C (TJ) | Surface Mount | SOT-563/SCH6 | SOT-563, SOT-666 |
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ON Semiconductor |
MOSFET N-CH 35V 3A CPH3 |
4.968 |
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- | N-Channel | MOSFET (Metal Oxide) | 35V | 3A (Ta) | 4V, 10V | 104mOhm @ 1.5A, 10V | 2.6V @ 1mA | 4nC @ 10V | ±20V | 186pF @ 20V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | 3-CPH | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET N-CH 100V 70A TO220-3 |
5.508 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 70A (Ta) | 10V, 15V | 10.8mOhm @ 35A, 15V | 4V @ 1mA | 26nC @ 10V | ±20V | 2010pF @ 50V | - | 2.1W (Ta), 72W (Tc) | 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 40V TO220-3 |
7.848 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 4.5V, 10V | 3.9mOhm @ 80A, 10V | 2V @ 45µA | 78nC @ 10V | ±20V | 6100pF @ 25V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 550V TO220-3 |
2.106 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 550V | 12A (Tc) | 10V | 299mOhm @ 6.6A, 10V | 3.5V @ 440µA | 31nC @ 10V | ±20V | 1190pF @ 100V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 650V TO-220AB |
5.544 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 7.3A (Tc) | 10V | 600mOhm @ 4.6A, 10V | 3.9V @ 350µA | 27nC @ 10V | ±20V | 790pF @ 25V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 650V TO-220AB |
6.876 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 20.7A (Tc) | 10V | 220mOhm @ 13.1A, 10V | 5V @ 1mA | 124nC @ 10V | ±20V | 2400pF @ 25V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Diodes Incorporated |
MOSFET BVDSS: 651V 800V TO251 |
6.372 |
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- | N-Channel | MOSFET (Metal Oxide) | 700V | 4.6A (Tc) | 10V | 1.3Ohm @ 2.5A, 10V | 4V @ 250µA | 13.9nC @ 10V | ±30V | 351pF @ 50V | - | 41W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251 | TO-251-3 Stub Leads, IPak |
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Diodes Incorporated |
MOSFET N-CH 700V 4.6A TO251 |
8.676 |
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- | N-Channel | MOSFET (Metal Oxide) | 700V | 4.6A (Tc) | 10V | 1.3Ohm @ 2.5A, 10V | 4V @ 250µA | 13.9nC @ 10V | ±30V | 351pF @ 50V | - | 41W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251 | TO-251-3 Stub Leads, IPak |
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Diodes Incorporated |
MOSFET N-CH 60V 0.38A SOT23 |
2.844 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 380mA (Ta) | 5V, 10V | 2Ohm @ 500mA, 10V | 2.5V @ 1mA | 0.3nC @ 4.5V | ±20V | 30pF @ 25V | - | 370mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 100V DPAK |
6.804 |
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