Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 926/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GeneSiC Semiconductor |
TRANS SJT 1.7KV 100A |
2.358 |
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- | - | SiC (Silicon Carbide Junction Transistor) | 1700V | 100A (Tc) | - | 25mOhm @ 50A | - | - | - | - | - | 583W (Tc) | 175°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 75V 89A D2PAK |
7.668 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 87A (Tc) | 6V, 10V | 7.2mOhm @ 52A, 10V | 3.7V @ 100µA | 126nC @ 10V | ±20V | 4430pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 75V 56A D2PAK |
2.970 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 56A (Tc) | 6V, 10V | 11.2mOhm @ 35A, 10V | 3.7V @ 100µA | 89nC @ 10V | ±20V | 3107pF @ 25V | - | 99W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 75V 240A D2PAK |
3.580 |
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StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 75V | 240A (Tc) | 6V, 10V | 2mOhm @ 100A, 10V | 3.7V @ 250µA | 428nC @ 10V | ±20V | 13970pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
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Infineon Technologies |
MOSFET N-CH 75V 183A D2PAK |
7.308 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 75V | 197A (Tc) | 6V, 10V | 3.05mOhm @ 100A, 10V | 3.7V @ 150µA | 270nC @ 10V | ±20V | 10130pF @ 25V | - | 294W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
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Infineon Technologies |
MOSFET N-CH 75V 183A D2PAK |
5.454 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 75V | 183A (Tc) | 6V, 10V | 3.5mOhm @ 100A, 10V | 3.7V @ 250µA | 270nC @ 10V | ±20V | 10150pF @ 25V | - | 290W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 75V 104A D2PAK |
7.884 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 85A (Tc) | 6V, 10V | 6.7mOhm @ 51A, 10V | 3.7V @ 100µA | 130nC @ 10V | ±20V | 4440pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 75V 76A D2PAK |
2.088 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 76A (Tc) | 6V, 10V | 8.4mOhm @ 46A, 10V | 3.7V @ 100µA | 109nC @ 10V | ±20V | 4020pF @ 25V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 25V 44A 8PQFN |
8.964 |
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FASTIRFET™, HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 44A (Ta), 260A (Tc) | 4.5V, 10V | 1.1mOhm @ 50A, 10V | 2.1V @ 100µA | 74nC @ 10V | ±20V | 4620pF @ 13V | - | 3.5W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 150V 86A D2PAK |
7.290 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 86A (Tc) | 10V | 14.7mOhm @ 34A, 10V | 5V @ 250µA | 110nC @ 10V | ±20V | 4460pF @ 50V | - | 350W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies |
MOSFET N-CH 30V 160A D2PAK |
6.210 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 160A (Tc) | 10V | 1.95mOhm @ 148A, 10V | 2.35V @ 150µA | 83nC @ 4.5V | ±20V | 8020pF @ 25V | - | 195W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Diodes Incorporated |
MOSFET N-CH 300V .25A SOT23 |
3.508 |
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- | N-Channel | MOSFET (Metal Oxide) | 300V | 250mA (Ta) | 2.7V, 10V | 4Ohm @ 300mA, 10V | 3V @ 250µA | 7.6nC @ 10V | ±20V | 187.3pF @ 25V | - | 310mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Nexperia |
MOSFET N-CH TRENCH |
5.652 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Nexperia |
MOSFET N-CH |
2.700 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | LFPAK33 | SOT-1210, 8-LFPAK33 |
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Microsemi |
MOSFET N-CH 1200V 41A TO247 |
8.712 |
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- | N-Channel | SiCFET (Silicon Carbide) | 1200V | 41A (Tc) | 20V | 100mOhm @ 20A, 20V | 3V @ 1mA (Typ) | 130nC @ 20V | +25V, -10V | 2560pF @ 1000V | - | 273W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Microsemi |
MOSFET N-CH 1200V 41A D3PAK |
8.136 |
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- | N-Channel | SiCFET (Silicon Carbide) | 1200V | 41A (Tc) | 20V | 100mOhm @ 20A, 20V | 3V @ 1mA (Typ) | 130nC @ 20V | +25V, -10V | 2560pF @ 1000V | - | 273W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D3Pak | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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Rohm Semiconductor |
MOSFET P-CH 12V 4.5A TUMT6 |
4.266 |
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- | P-Channel | MOSFET (Metal Oxide) | 12V | 4.5A (Ta) | 1.5V, 4.5V | 30mOhm @ 4.5A, 4.5V | 1V @ 1mA | 40nC @ 4.5V | -8V | 4200pF @ 6V | - | 600mW (Ta) | 150°C (TJ) | Surface Mount | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
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ON Semiconductor |
MOSFET N-CH 80V 110A TO-220 |
3.186 |
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Automotive, AEC-Q101, PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 80V | 110A (Tc) | 10V | 2.8mOhm @ 80A, 10V | 4V @ 250µA | 150nC @ 10V | ±20V | 10000pF @ 40V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Global Power Technologies Group |
MOSFET N-CH 400V 2A DPAK |
2.160 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 2A (Tc) | 10V | 3.4Ohm @ 1A, 10V | 4V @ 250µA | 3.7nC @ 10V | ±30V | 210pF @ 25V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Global Power Technologies Group |
MOSFET N-CH 400V 2A IPAK |
8.694 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 2A (Tc) | 10V | 3.4Ohm @ 1A, 10V | 4V @ 250µA | 3.7nC @ 10V | ±30V | 210pF @ 25V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Global Power Technologies Group |
MOSFET N-CH 500V 2.5A DPAK |
7.650 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 2.5A (Tc) | 10V | 2.8Ohm @ 1.25A, 10V | 4V @ 250µA | 9.2nC @ 10V | ±30V | 395pF @ 25V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Global Power Technologies Group |
MOSFET N-CH 500V 2.5A TO220 |
4.986 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 2.5A (Tc) | 10V | 2.8Ohm @ 1.25A, 10V | 4V @ 250µA | 9nC @ 10V | ±30V | 395pF @ 25V | - | 52.1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Global Power Technologies Group |
MOSFET N-CH 500V 2.5A IPAK |
8.928 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 2.5A (Tc) | 10V | 2.8Ohm @ 1.25A, 10V | 4V @ 250µA | 9.2nC @ 10V | ±30V | 395pF @ 25V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Global Power Technologies Group |
MOSFET N-CH 800V 3A TO220 |
3.508 |
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- | N-Channel | MOSFET (Metal Oxide) | 800V | 3A (Tc) | 10V | 4.2Ohm @ 1.5A, 10V | 4V @ 250µA | 19nC @ 10V | ±30V | 696pF @ 25V | - | 94W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Global Power Technologies Group |
MOSFET N-CH 800V 3A IPAK |
3.870 |
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- | N-Channel | MOSFET (Metal Oxide) | 800V | 3A (Tc) | 10V | 4.2Ohm @ 1.5A, 10V | 4V @ 250µA | 19nC @ 10V | ±30V | 696pF @ 25V | - | 94W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Global Power Technologies Group |
MOSFET N-CH 900V 4A TO220F |
4.734 |
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- | N-Channel | MOSFET (Metal Oxide) | 900V | 4A (Tc) | 10V | 4Ohm @ 2A, 10V | 4V @ 250µA | 25nC @ 10V | ±30V | 955pF @ 25V | - | 38.7W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Global Power Technologies Group |
MOSFET N-CH 900V 4A TO220 |
4.824 |
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- | N-Channel | MOSFET (Metal Oxide) | 900V | 4A (Tc) | 10V | 4Ohm @ 2A, 10V | 4V @ 250µA | 25nC @ 10V | ±30V | 955pF @ 25V | - | 123W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Global Power Technologies Group |
MOSFET N-CH 400V 3.4A DPAK |
6.084 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 3.4A (Tc) | 10V | 1.6Ohm @ 1.7A, 10V | 4V @ 250µA | 7.1nC @ 10V | ±30V | 522pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Global Power Technologies Group |
MOSFET N-CH 400V 3.4A IPAK |
6.858 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 3.4A (Tc) | 10V | 1.6Ohm @ 1.7A, 10V | 4V @ 250µA | 7.1nC @ 10V | ±30V | 522pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Global Power Technologies Group |
MOSFET N-CH 500V 4.5A DPAK |
5.346 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 4.5A (Tc) | 10V | 1.65Ohm @ 2.25A, 10V | 4V @ 250µA | 11nC @ 10V | ±30V | 627pF @ 25V | - | 92.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |