Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 92/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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ON Semiconductor |
MOSFET P-CH 60V 17A TO-220 |
21.900 |
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QFET® | P-Channel | MOSFET (Metal Oxide) | 60V | 17A (Tc) | 10V | 120mOhm @ 8.5A, 10V | 4V @ 250µA | 27nC @ 10V | ±25V | 900pF @ 25V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 60V 80A F7 D2PAK |
22.476 |
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STripFET™ F7 | N-Channel | MOSFET (Metal Oxide) | 60V | 80A (Tc) | 10V | 5mOhm @ 40A, 10V | 4V @ 250µA | 42nC @ 10V | ±20V | 2600pF @ 25V | - | 160W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 200V 24A D2PAK |
53.448 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 24A (Tc) | 10V | 77.5mOhm @ 15A, 10V | 5V @ 100µA | 38nC @ 10V | ±20V | 1710pF @ 50V | - | 144W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 30A TO-220AB |
746.436 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 30A (Tc) | 4V, 10V | 35mOhm @ 16A, 10V | 2V @ 250µA | 25nC @ 5V | ±16V | 880pF @ 25V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 800V 1A IPAK |
21.906 |
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SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 800V | 1A (Tc) | 10V | 16Ohm @ 500mA, 10V | 4.5V @ 50µA | 7.7nC @ 10V | ±30V | 160pF @ 25V | - | 45W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET N-CH 100V 12.8A TO-220 |
26.088 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 12.8A (Tc) | 5V, 10V | 180mOhm @ 6.4A, 10V | 2V @ 250µA | 12nC @ 5V | ±20V | 520pF @ 25V | - | 65W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Vishay Siliconix |
MOSFET P-CH 80V 50A DPAK |
95.586 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 80V | 50A (Tc) | 4.5V, 10V | 25.2mOhm @ 12.5A, 10V | 3V @ 250µA | 160nC @ 10V | ±20V | 4700pF @ 40V | - | 8.3W (Ta), 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET P-CH 40V 17.3A |
23.994 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 40V | 17.3A (Tc) | 4.5V, 10V | 14mOhm @ 10.5A, 10V | 2.5V @ 250µA | 115nC @ 10V | ±20V | 4250pF @ 20V | - | 7.14W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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STMicroelectronics |
MOSFET N-CH 950V 4A DPAK |
26.430 |
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SuperMESH3™ | N-Channel | MOSFET (Metal Oxide) | 950V | 4A (Tc) | 10V | 3.5Ohm @ 2A, 10V | 5V @ 100µA | 19nC @ 10V | ±30V | 460pF @ 25V | - | 90W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 100V 13A POWER56 |
28.386 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 13A (Ta), 60A (Tc) | 6V, 10V | 8mOhm @ 13A, 10V | 4V @ 250µA | 58nC @ 10V | ±20V | 4120pF @ 50V | - | 2.5W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 55A DPAK |
22.380 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 100V | 55A (Ta) | 10V | 6.5mOhm @ 27.5A, 10V | 4V @ 500µA | 49nC @ 10V | ±20V | 3280pF @ 10V | - | 157W (Tc) | 175°C (TJ) | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 55V 31A TO-220AB |
28.440 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 55V | 31A (Tc) | 10V | 60mOhm @ 16A, 10V | 4V @ 250µA | 63nC @ 10V | ±20V | 1200pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 30V 64A TO-220AB |
32.484 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 64A (Tc) | 4.5V, 10V | 12mOhm @ 34A, 10V | 1V @ 250µA | 33nC @ 4.5V | ±16V | 1650pF @ 25V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 4.5A TO-220AB |
14.316 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 4.5A (Tc) | 10V | 1.5Ohm @ 2.7A, 10V | 4V @ 250µA | 38nC @ 10V | ±20V | 610pF @ 25V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 600V 13.8A TO263 |
29.964 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 13.8A (Tc) | 10V | 280mOhm @ 6.5A, 10V | 3.5V @ 430µA | 43nC @ 10V | ±20V | 950pF @ 100V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Nexperia |
MOSFET N-CH 75V 73A TO220AB |
101.574 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 75V | 73A (Tc) | 10V | 16mOhm @ 25A, 10V | 2V @ 1mA | 30nC @ 5V | ±15V | 3026pF @ 25V | - | 157W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CHANNEL 800V 3A TO220 |
19.122 |
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MDmesh™ K5 | N-Channel | MOSFET (Metal Oxide) | 800V | 3A (Tc) | 10V | 2.6Ohm @ 1A, 10V | 5V @ 100µA | 3.7nC @ 10V | ±30V | 122pF @ 100V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Nexperia |
MOSFET N-CH 100V 75A D2PAK |
25.434 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 75A (Tc) | 5V, 10V | 9.7mOhm @ 25A, 10V | 2V @ 1mA | 86nC @ 5V | ±15V | 11045pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N CH 75V 40A PWRFLT 5X6 |
22.338 |
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STripFET™ III | N-Channel | MOSFET (Metal Oxide) | 75V | 40A (Tc) | 5V, 10V | 19mOhm @ 20A, 10V | 1V @ 250µA | 12nC @ 5V | +20V, -16V | 1300pF @ 25V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerFlat™ (5x6) | 8-PowerVDFN |
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ON Semiconductor |
MOSFET N-CH 250V 33A D2PAK |
92.238 |
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UniFET™ | N-Channel | MOSFET (Metal Oxide) | 250V | 33A (Tc) | 10V | 94mOhm @ 16.5A, 10V | 5V @ 250µA | 48nC @ 10V | ±30V | 2135pF @ 25V | - | 235W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 40V 60A PPAK SO-8 |
25.812 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 60A (Tc) | 4.5V, 10V | 2.3mOhm @ 20A, 10V | 2.5V @ 250µA | 155nC @ 10V | ±20V | 5660pF @ 20V | - | 6.25W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET P-CH 200V 6.5A TO-220AB |
22.800 |
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- | P-Channel | MOSFET (Metal Oxide) | 200V | 6.5A (Tc) | 10V | 800mOhm @ 3.9A, 10V | 4V @ 250µA | 29nC @ 10V | ±20V | 700pF @ 25V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 100V 5.6A D2PAK |
26.964 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 5.6A (Tc) | 10V | 540mOhm @ 3.4A, 10V | 4V @ 250µA | 8.3nC @ 10V | ±20V | 180pF @ 25V | - | 3.7W (Ta), 43W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 60V 17A TO-220AB |
21.558 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 17A (Tc) | 10V | 100mOhm @ 10A, 10V | 4V @ 250µA | 25nC @ 10V | ±20V | 640pF @ 25V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 60V 2.5A 4-DIP |
16.422 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 2.5A (Ta) | 10V | 100mOhm @ 1.5A, 10V | 4V @ 250µA | 25nC @ 10V | ±20V | 640pF @ 25V | - | 1.3W (Ta) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
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Microchip Technology |
MOSFET P-CH 500V 0.16A SOT89-3 |
19.578 |
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- | P-Channel | MOSFET (Metal Oxide) | 500V | 160mA (Tj) | 4.5V, 10V | 30Ohm @ 100mA, 10V | 3.5V @ 1mA | - | ±20V | 190pF @ 25V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-243AA (SOT-89) | TO-243AA |
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STMicroelectronics |
MOSFET N-CH 600V 2A IPAK |
29.364 |
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SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 600V | 2A (Tc) | 10V | 4.8Ohm @ 1A, 10V | 4.5V @ 50µA | 15nC @ 10V | ±30V | 280pF @ 25V | - | 45W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 100V 12A TO220FP |
87.132 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 12A (Tc) | 4V, 10V | 100mOhm @ 9A, 10V | 2V @ 250µA | 34nC @ 5V | ±16V | 800pF @ 25V | - | 41W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB Full-Pak | TO-220-3 Full Pack |
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Nexperia |
MOSFET N-CH 100V TO220AB |
19.452 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 57A (Tj) | 10V | 16mOhm @ 15A, 10V | 4V @ 1mA | 49nC @ 10V | ±20V | 2404pF @ 50V | - | 148W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Texas Instruments |
MOSFET N-CH 60V 100A 8SON |
25.800 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Ta) | 4.5V, 10V | 4.6mOhm @ 22A, 10V | 2.3V @ 250µA | 43nC @ 10V | ±20V | 3840pF @ 30V | - | 3.1W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSONP (5x6) | 8-PowerTDFN |