Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 888/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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Rohm Semiconductor |
MOSFET P-CH 45V 6.5A MPT6 |
7.038 |
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- | P-Channel | MOSFET (Metal Oxide) | 45V | 6.5A (Ta) | 4V, 10V | 31mOhm @ 6.5A, 10V | 3V @ 1mA | 28nC @ 5V | ±20V | 3200pF @ 10V | - | 2W (Ta) | 150°C (TJ) | Surface Mount | MPT6 | 6-SMD, Flat Leads |
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Rohm Semiconductor |
MOSFET N-CH 60V 5.5A MPT6 |
8.316 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 5.5A (Ta) | 4V, 10V | 49mOhm @ 5.5A, 10V | 3V @ 1mA | 14nC @ 10V | ±20V | 730pF @ 10V | - | 2W (Ta) | 150°C (TJ) | Surface Mount | MPT6 | 6-SMD, Flat Leads |
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Rohm Semiconductor |
MOSFET N-CH 60V 8A MPT6 |
4.680 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 8A (Ta) | 4V, 10V | 24mOhm @ 8A, 10V | 3V @ 1mA | 40nC @ 10V | ±20V | 1700pF @ 10V | - | 2W (Ta) | 150°C (TJ) | Surface Mount | MPT6 | 6-SMD, Flat Leads |
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Diodes Incorporated |
MOSFET P-CH 30V 9.8A POWERDI3333 |
4.014 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 9.8A (Ta) | 4.5V, 20V | 11mOhm @ 12A, 20V | 3V @ 250µA | 58nC @ 10V | ±25V | 2987pF @ 15V | - | 940mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N CH 100V 56A DPAK |
7.740 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 56A (Tc) | 10V | 13.9mOhm @ 38A, 10V | 4V @ 100µA | 81nC @ 10V | ±20V | 3031pF @ 50V | - | 143W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 61A D2PAK |
6.102 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 61A (Tc) | 10V | 13.9mOhm @ 37A, 10V | 4V @ 100µA | 87nC @ 10V | ±20V | 3180pF @ 50V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N CH 40V 90A DIRECTFET MX |
4.788 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 90A (Tc) | 6V, 10V | 1.4mOhm @ 90A, 10V | 3.9V @ 150µA | 212nC @ 10V | ±20V | 6852pF @ 25V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
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Infineon Technologies |
MOSFET N CH 40V 100A PQFN5X6 |
3.582 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 6V, 10V | 1.4mOhm @ 100A, 10V | 3.9V @ 150µA | 194nC @ 10V | ±20V | 6419pF @ 25V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-VQFN Exposed Pad |
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Infineon Technologies |
MOSFET N CH 100V 11A PQFN5X6 |
6.066 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 11A (Ta), 58A (Tc) | 10V | 13.5mOhm @ 35A, 10V | 4V @ 100µA | 87nC @ 10V | ±20V | 3240pF @ 25V | - | 3.6W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-TQFN Exposed Pad |
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Infineon Technologies |
MOSFET N-CH 40V 87A DPAK |
6.138 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 56A (Tc) | 10V | 9.2mOhm @ 30A, 10V | 4V @ 250µA | 71nC @ 10V | ±20V | 2150pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 17A D2PAK |
7.146 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 17A (Tc) | 10V | 70mOhm @ 10A, 10V | 4V @ 250µA | 20nC @ 10V | ±20V | 370pF @ 25V | - | 3.8W (Ta), 45W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 40V 160A D2PAK |
4.050 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 160A (Tc) | 4.3V, 10V | 4mOhm @ 95A, 10V | 3V @ 250µA | 140nC @ 5V | ±20V | 6600pF @ 25V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 51A D2PAK |
2.556 |
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- | - | - | - | - | 4.5V, 10V | - | - | - | ±16V | - | - | - | -55°C ~ 175°C (TJ) | Surface Mount | - | - |
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Infineon Technologies |
MOSFET N-CH 20V 4.2A 8SOIC |
6.678 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 4.2A (Ta) | - | 85mOhm @ 4A, 4.5V | 700mV @ 250µA | 7.5nC @ 4.5V | - | 310pF @ 15V | - | - | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 60V 79A D2PAK |
3.400 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 79A (Tc) | 10V | 8.4mOhm @ 47A, 10V | 4V @ 100µA | 69nC @ 10V | ±20V | 2290pF @ 50V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 202A D2PAK |
2.736 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 75A (Tc) | 10V | 4mOhm @ 95A, 10V | 4V @ 250µA | 200nC @ 10V | ±20V | 7360pF @ 25V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 75A TO-220AB |
4.536 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 4.7mOhm @ 104A, 10V | 4V @ 250µA | 230nC @ 10V | ±20V | 5110pF @ 25V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 135A D2PAK |
8.532 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 135A (Tc) | 10V | 4.7mOhm @ 104A, 10V | 4V @ 250µA | 230nC @ 10V | ±20V | 5110pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 75V 75A TO-220AB |
4.752 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 75A (Tc) | 10V | 13mOhm @ 43A, 10V | 4V @ 250µA | 160nC @ 10V | ±20V | 3820pF @ 25V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 30V 235A TO-262 |
4.788 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 160A (Tc) | 10V | 2.4mOhm @ 75A, 10V | 4V @ 150µA | 240nC @ 10V | ±20V | 6320pF @ 25V | - | 231W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 30V 235A D2PAK |
4.212 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 160A (Tc) | 10V | 2.4mOhm @ 75A, 10V | 4V @ 150µA | 240nC @ 10V | ±20V | 6320pF @ 25V | - | 231W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 75V 80A TO-220AB |
8.712 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 75A (Tc) | 10V | 12.6mOhm @ 48A, 10V | 4V @ 250µA | 130nC @ 10V | ±20V | 3270pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 150V 21A D2PAK |
8.514 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 21A (Tc) | 10V | 82mOhm @ 12A, 10V | 4V @ 250µA | 95nC @ 10V | ±20V | 1300pF @ 25V | - | 3.8W (Ta), 94W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 87A TO-220AB |
5.454 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 87A (Tc) | 10V | 9.2mOhm @ 52A, 10V | 4V @ 100µA | 54nC @ 10V | ±20V | 2150pF @ 25V | - | 143W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 75V 106A D2PAK |
8.856 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 106A (Tc) | 10V | 7mOhm @ 82A, 10V | 4V @ 250µA | 220nC @ 10V | ±20V | 5310pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET P-CH 20V 5.4A 8SOIC |
3.456 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 5.4A (Ta) | 2.7V, 4.5V | 60mOhm @ 5.4A, 4.5V | 1.6V @ 250µA | 22nC @ 4.5V | ±12V | 780pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 60V 7A 8SOIC |
2.178 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 7A (Ta) | 4.5V, 10V | 26mOhm @ 4.2A, 10V | 3V @ 250µA | 31nC @ 4.5V | ±20V | 1740pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 60V 43A TO-220AB |
8.208 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 43A (Tc) | 10V | 15.8mOhm @ 25A, 10V | 4V @ 50µA | 30nC @ 10V | ±20V | 1150pF @ 50V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 1.5A SOT-223 |
8.424 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 1.5A (Ta) | 10V | 160mOhm @ 1.9A, 10V | 4V @ 250µA | 11nC @ 10V | ±20V | 190pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 55V 2.8A SOT-223 |
8.946 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 2.8A (Ta) | 10V | 75mOhm @ 2.8A, 10V | 4V @ 250µA | 18.3nC @ 10V | ±20V | 400pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |