Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 884/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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ON Semiconductor |
MOSFET N-CH 30V 80A D2PAK |
2.322 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 80A (Tc) | 10V | 1.8mOhm @ 80A, 10V | 4V @ 250µA | 243nC @ 10V | ±20V | 11825pF @ 15V | - | 254W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 600V 25A I2PAK |
7.056 |
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SupreMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 25A (Tc) | 10V | 125mOhm @ 12.5A, 10V | 4V @ 250µA | 74nC @ 10V | ±30V | 3352pF @ 100V | - | 216W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAK (TO-262) | TO-262-3 Long Leads, I²Pak, TO-262AA |
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ON Semiconductor |
MOSFET N-CH 600V TO-220-3 |
4.554 |
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SupreMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 25A (Tc) | 10V | 125mOhm @ 12.5A, 10V | 4V @ 250µA | 74nC @ 10V | ±30V | 3352pF @ 100V | - | 216W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 100V 120A I2PAK-3 |
7.686 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 120A (Tc) | 10V | 4.5mOhm @ 100A, 10V | 4V @ 250µA | 74nC @ 10V | ±20V | 5270pF @ 50V | - | 263W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I2PAK (TO-262) | TO-262-3 Long Leads, I²Pak, TO-262AA |
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ON Semiconductor |
MOSFET N-CH 80V 223A TO-220-3 |
7.200 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 80V | 120A (Tc) | 10V | 2.7mOhm @ 100A, 10V | 4.5V @ 250µA | 178nC @ 10V | ±20V | 13530pF @ 40V | - | 246W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 100V 120A TO-220-3 |
8.586 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 120A (Tc) | 10V | 4.5mOhm @ 100A, 10V | 4V @ 250µA | 74nC @ 10V | ±20V | 5270pF @ 50V | - | 263W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 150V 130A TO-220-3 |
3.600 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 150V | 130A (Tc) | 10V | 7.5mOhm @ 100A, 10V | 4V @ 250µA | 100nC @ 10V | ±20V | 7350pF @ 75V | - | 333W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 150V TO-220-3 |
6.534 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 150V | 83A (Tc) | 10V | 8.3mOhm @ 75A, 10V | 4V @ 250µA | 84nC @ 10V | ±20V | 6040pF @ 25V | - | 294W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 100V TO-220-3 |
6.138 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 96A (Tc) | 10V | 8.5mOhm @ 96A, 10V | 4V @ 250µA | 40nC @ 10V | ±20V | 2695pF @ 50V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 100V 50A TO-220-3 |
2.448 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 50A (Tc) | 10V | 15mOhm @ 50A, 10V | 4V @ 250µA | 21nC @ 10V | ±20V | 1440pF @ 50V | - | 91W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 55V 80A TO-220AB |
7.290 |
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- | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 10V | 7mOhm @ 80A, 10V | 4V @ 250µA | 269nC @ 20V | ±20V | 3565pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 8V 16A MICRO |
3.798 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 8V | 16A (Tc) | 1.2V, 4.5V | 23mOhm @ 1.5A, 4.5V | 800mV @ 250µA | 26nC @ 4.5V | ±5V | 1470pF @ 4V | - | 2.77W (Ta), 13W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 6-microfoot | 6-UFBGA |
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Vishay Siliconix |
MOSFET P-CH 30V 12A PWR PK |
7.704 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 12A (Tc) | 4.5V, 10V | 15mOhm @ 7A, 10V | 2.2V @ 250µA | 63nC @ 10V | ±20V | 2320pF @ 15V | - | 3.1W (Ta), 31W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® ChipFet Dual | PowerPAK® ChipFET™ Dual |
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Vishay Siliconix |
MOSFET N-CH 30V 60A PPAK SO-8 |
3.816 |
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SkyFET®, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 60A (Tc) | 4.5V, 10V | 3.4mOhm @ 20A, 10V | 2.5V @ 250µA | 75nC @ 10V | ±20V | 2873pF @ 15V | Schottky Diode (Body) | 5W (Ta), 48W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 50V 100MA USM |
4.392 |
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- | N-Channel | MOSFET (Metal Oxide) | 50V | 100mA (Ta) | - | 20Ohm @ 10mA, 4V | 1.5V @ 1µA | - | - | 7pF @ 3V | - | 150mW (Ta) | - | Surface Mount | USM | SC-70, SOT-323 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 200MA SMD |
5.940 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 200mA (Ta) | 4.5V, 10V | 2.1Ohm @ 500mA, 10V | 2.5V @ 250µA | - | ±20V | 17pF @ 25V | - | 200mW (Ta) | 150°C (TJ) | Surface Mount | S-Mini | TO-236-3, SC-59, SOT-23-3 |
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Microsemi |
MOSFET N-CH 800V 13A TO-247 |
7.164 |
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- | N-Channel | MOSFET (Metal Oxide) | 800V | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 500V 3.6A DPAK |
8.118 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 500V | 3.6A (Tc) | 10V | 2.2Ohm @ 2.2A, 10V | 5V @ 250µA | 20nC @ 10V | ±20V | 810pF @ 25V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 500V 6A DPAK |
5.688 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 500V | 6A (Tc) | 10V | 1.3Ohm @ 3.7A, 10V | 5V @ 250µA | 34nC @ 10V | ±20V | 1346pF @ 25V | - | 119W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 40V 26A 8PQFN |
4.716 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 26A (Ta), 85A (Tc) | 4.5V, 10V | 3.3mOhm @ 50A, 10V | 2.5V @ 100µA | 58nC @ 4.5V | ±16V | 3720pF @ 25V | - | 3.6W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 75V 14A 8PQFN |
5.670 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 14A (Ta), 75A (Tc) | 10V | 8.5mOhm @ 45A, 10V | 4V @ 100µA | 72nC @ 10V | ±20V | 3110pF @ 25V | - | 3.6W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 100V 45A TDSON-8 |
3.330 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 7.4A (Ta), 45A (Tc) | 4.5V, 10V | 20.5mOhm @ 45A, 10V | 2.4V @ 43µA | 41nC @ 10V | ±20V | 2900pF @ 50V | - | 76W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 120V 37A 8TDSON |
3.454 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 120V | 37A (Tc) | 10V | 24mOhm @ 31A, 10V | 4V @ 35µA | 27nC @ 10V | ±20V | 1900pF @ 60V | - | 66W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 34V 22A TDSON-8 |
3.418 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 34V | 22A (Ta), 100A (Tc) | 4.5V, 10V | 2.6mOhm @ 30A, 10V | 2V @ 250µA | 55nC @ 10V | ±20V | 4300pF @ 15V | - | 2.5W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 34V 19A TDSON-8 |
7.002 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 34V | 19A (Ta), 98A (Tc) | 4.5V, 10V | 3.8mOhm @ 30A, 10V | 2V @ 250µA | 41nC @ 10V | ±20V | 3200pF @ 15V | - | 2.5W (Ta), 57W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 34V 17A TDSON-8 |
3.526 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 34V | 17A (Ta), 85A (Tc) | 4.5V, 10V | 4.5mOhm @ 30A, 10V | 2V @ 250µA | 34nC @ 10V | ±20V | 2700pF @ 15V | - | 2.5W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 45A TDSON-8 |
8.802 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 13A (Ta), 45A (Tc) | 4.5V, 10V | 9mOhm @ 30A, 10V | 2.2V @ 250µA | 16nC @ 10V | ±20V | 1300pF @ 15V | - | 2.5W (Ta), 28W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 44A TDSON-8 |
3.114 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 12A (Ta) 44A (Tc) | 4.5V, 10V | 9.1mOhm @ 30A, 10V | 2V @ 250µA | 20nC @ 10V | ±20V | 1500pF @ 15V | - | 2.5W (Ta), 28W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 60V 13A WDSON-2 |
3.060 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 13A (Ta), 56A (Tc) | 10V | 7.7mOhm @ 30A, 10V | 4V @ 33µA | 46nC @ 10V | ±20V | 3700pF @ 30V | - | 2.2W (Ta), 38W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | MG-WDSON-2, CanPAK M™ | 3-WDSON |
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Infineon Technologies |
MOSFET N-CH 600V 120MA SOT-223 |
3.402 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 600V | 120mA (Ta) | 4.5V, 10V | 45Ohm @ 120mA, 10V | 2.3V @ 94µA | 6.6nC @ 10V | ±20V | 150pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |