Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 864/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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Vishay Siliconix |
MOSFET N-CH 40V 85A TO220AB |
5.868 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 85A (Tc) | 4.5V, 10V | 3.5mOhm @ 30A, 10V | 3V @ 250µA | 250nC @ 10V | ±20V | 6860pF @ 25V | - | 3.75W (Ta), 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 100V 85A TO220AB |
3.544 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 85A (Tc) | 10V | 10mOhm @ 20A, 10V | 4.5V @ 250µA | 120nC @ 10V | ±20V | 4660pF @ 50V | - | 3.75W (Ta), 227W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 30V 90A TO220AB |
5.760 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 90A (Tc) | 4.5V, 10V | 2.9mOhm @ 28.8A, 10V | 2.5V @ 250µA | 257nC @ 10V | ±20V | 12065pF @ 15V | - | 3.75W (Ta), 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 75V 90A TO220AB |
7.308 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 90A (Tc) | 10V | 6.8mOhm @ 20A, 10V | 4.5V @ 250µA | 115nC @ 10V | ±20V | 4620pF @ 30V | - | 3.75W (Ta), 272W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 75V 90A TO220AB |
3.636 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 90A (Tc) | 10V | 7.7mOhm @ 20A, 10V | 4.5V @ 250µA | 105nC @ 10V | ±20V | 4250pF @ 30V | - | 3.75W (Ta), 208.3W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 150V 90A TO220AB |
2.556 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 90A (Tc) | 10V | 18mOhm @ 20A, 10V | 4.5V @ 250µA | 100nC @ 10V | ±20V | 4180pF @ 75V | - | 3.75W (Ta), 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 100V 85A TO220AB |
8.730 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 85A (Tc) | 4.5V, 10V | 10.5mOhm @ 30A, 10V | 3V @ 250µA | 160nC @ 10V | ±20V | 6550pF @ 25V | - | 3.75W (Ta), 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET P-CH 30V 385MA SOT23-3 |
2.340 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 385mA (Ta) | 4.5V, 10V | 1.4Ohm @ 500mA, 10V | 3V @ 250µA | 1nC @ 10V | ±20V | 31pF @ 15V | - | 350mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET N-CH 40V 13A SO-8FL |
6.732 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 14A (Ta), 75A (Tc) | 4.5V, 10V | 9.3mOhm @ 20A, 10V | 3V @ 250µA | 24nC @ 10V | ±20V | 1231pF @ 20V | - | 3.6W (Ta), 107W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Infineon Technologies |
MOSFET N-CH 40V 22A PQFN |
3.598 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 22A (Ta), 100A (Tc) | 10V | 4.3mOhm @ 50A, 10V | 4V @ 100µA | 65nC @ 10V | ±20V | 2460pF @ 25V | - | 3.6W (Ta), 105W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) | 8-VQFN Exposed Pad |
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Infineon Technologies |
MOSFET N-CH 150V 5.0A PQFN |
3.798 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 5A (Ta), 27A (Tc) | 10V | 58mOhm @ 16A, 10V | 5V @ 100µA | 32nC @ 10V | ±20V | 1350pF @ 50V | - | 3.6W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) | 8-VQFN Exposed Pad |
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Infineon Technologies |
MOSFET N-CH 200V 3.8A PQFN |
4.770 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 3.8A (Ta), 20A (Tc) | 10V | 99.9mOhm @ 5.8A, 10V | 5V @ 100µA | 30nC @ 10V | ±20V | 1380pF @ 50V | - | 3.6W (Ta), 8.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) | 8-VQFN Exposed Pad |
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Infineon Technologies |
MOSFET N-CH 20V 10A PQFN |
3.978 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 10A (Ta), 12A (Tc) | 2.5V, 4.5V | 11.7mOhm @ 8.5A, 4.5V | 1.1V @ 10µA | 14nC @ 4.5V | ±12V | 1110pF @ 10V | - | 1.98W (Ta), 9.6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 6-PQFN (2x2) | 6-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 30V 8.7A PQFN |
7.668 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 8.7A (Ta), 19A (Tc) | 2.5V, 4.5V | 15.5mOhm @ 8.5A, 4.5V | 1.1V @ 10µA | 11nC @ 4.5V | ±12V | 1019pF @ 25V | - | 2.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-PQFN (2x2) | 6-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 30V 21A 5X6 PQFN |
5.850 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 27A (Ta), 120A (Tc) | 4.5V, 10V | 3.1mOhm @ 20A, 10V | 2.35V @ 50µA | 41nC @ 10V | ±20V | 3180pF @ 10V | - | 3.6W (Ta), 59W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 17A 5X6 PQFN |
7.974 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 21A (Ta), 82A (Tc) | 4.5V, 10V | 5mOhm @ 20A, 10V | 2.35V @ 50µA | 32nC @ 10V | ±20V | 2487pF @ 10V | - | 3.6W (Ta), 54W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 14A 5X6 PQFN |
3.418 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 17A (Ta), 56A (Tc) | 4.5V, 10V | 6.6mOhm @ 20A, 10V | 2.35V @ 25µA | 20nC @ 10V | ±20V | 1450pF @ 25V | - | 3.3W (Ta), 35W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 12A 5X6 PQFN |
6.138 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 14A (Ta), 44A (Tc) | 4.5V, 10V | 9mOhm @ 20A, 10V | 2.35V @ 25µA | 15nC @ 10V | ±20V | 1180pF @ 10V | - | 3.2W (Ta), 30W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 9.7A 5X6 PQFN |
2.682 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 12A (Ta), 35A (Tc) | 4.5V, 10V | 12.8mOhm @ 16.2A, 10V | 2.35V @ 25µA | 10nC @ 10V | ±20V | 790pF @ 10V | - | 3.2W (Ta), 27W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET P-CH 20V 5.8A 2X2 PQFN |
3.078 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 7.2A (Ta), 15A (Tc) | 2.5V, 4.5V | 31mOhm @ 8.5A, 4.5V | 1.1V @ 10µA | 12nC @ 10V | ±12V | 877pF @ 10V | - | 2.1W (Ta), 9.6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 6-PQFN (2x2) | 6-PowerVDFN |
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Renesas Electronics America |
MOSFET N-CH 30V 45A LFPAK |
3.474 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 45A (Ta) | 4.5V, 10V | 2.7mOhm @ 22.5A, 10V | - | 27nC @ 4.5V | ±20V | 4300pF @ 10V | - | 55W (Tc) | 150°C (TJ) | Surface Mount | LFPAK | SC-100, SOT-669 |
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Infineon Technologies |
MOSFET N-CH 100V 103A D2PAK |
8.496 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 103A (Tc) | 10V | 11.6mOhm @ 62A, 10V | 4V @ 250µA | 150nC @ 10V | ±20V | 5380pF @ 25V | - | 333W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Cree/Wolfspeed |
MOSFET N-CH 1200V 24A TO247 |
5.346 |
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Z-FET™ | N-Channel | SiCFET (Silicon Carbide) | 1200V | 24A (Tc) | 20V | 220mOhm @ 10A, 20V | 4V @ 500µA | 47.1nC @ 20V | +25V, -5V | 928pF @ 800V | - | 134W (Tc) | -55°C ~ 135°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 20A 8SOP |
2.880 |
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U-MOSVI-H | N-Channel | MOSFET (Metal Oxide) | 40V | 20A (Ta) | 4.5V, 10V | 11.3mOhm @ 10A, 10V | 2.3V @ 200µA | 25nC @ 10V | ±20V | 2110pF @ 10V | - | 1.6W (Ta), 30W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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NXP |
MOSFET N-CH 25V 100A LFPAK |
4.698 |
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- | N-Channel | MOSFET (Metal Oxide) | 25V | 100A (Tc) | 4.5V, 10V | 2.05mOhm @ 25A, 10V | 1.95V @ 1mA | 57nC @ 10V | ±20V | 3504pF @ 12V | - | 141W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Nexperia |
MOSFET N-CH 100V 520MA SOT223 |
2.250 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 520mA (Tc) | 5V | 10Ohm @ 150mA, 5V | 2V @ 1mA | - | ±20V | 40pF @ 10V | - | 6.25W (Tc) | -65°C ~ 150°C (TJ) | Surface Mount | SC-73 | TO-261-4, TO-261AA |
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NXP |
MOSFET N-CH 20V 0.98A SOT416 |
2.232 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 20V | 980mA (Tc) | 1.8V, 4.5V | 340mOhm @ 200mA, 4.5V | 1V @ 250µA | 0.89nC @ 4.5V | ±8V | 45pF @ 20V | - | 530mW (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SC-75 | SC-75, SOT-416 |
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NXP |
MOSFET N-CH 30V 0.84A SOT416 |
6.084 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 840mA (Tc) | 2.5V, 4.5V | 440mOhm @ 200mA, 4.5V | 1.5V @ 250µA | 0.65nC @ 4.5V | ±12V | 37pF @ 25V | - | 530mW (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SC-75 | SC-75, SOT-416 |
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NXP |
MOSFET N-CH 20V 1A SOT323 |
3.978 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 20V | 1A (Tc) | 2.5V, 4.5V | 350mOhm @ 200mA, 4.5V | 1.5V @ 250µA | 0.72nC @ 4.5V | ±12V | 34pF @ 20V | - | 560mW (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-323-3 | SC-70, SOT-323 |
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Nexperia |
MOSFET N-CH 55V 46A LFPAK |
4.284 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 46A | - | 17.3mOhm @ 20A, 10V | 2V @ 1mA | 18nC @ 5V | - | 1992pF @ 25V | - | - | - | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |