Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 850/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
MOSFET N-CH 20V 100A DPAK |
6.336 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 100A (Tc) | 2.5V, 4.5V | 4mOhm @ 21A, 4.5V | 1.1V @ 50µA | 72nC @ 4.5V | ±12V | 3770pF @ 10V | - | 63W (Tc) | -50°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 30V SC89 |
7.254 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | - | 4.5V, 10V | 93mOhm @ 1.3A, 10V | 3V @ 250µA | 8.3nC @ 10V | ±20V | 280pF @ 15V | - | 236mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SC-89-6 | SOT-563, SOT-666 |
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Vishay Siliconix |
MOSFET N-CH 20V SC89 |
2.520 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 20V | - | 2.5V, 4.5V | 91mOhm @ 1.3A, 4.5V | 1.55V @ 250µA | 5.9nC @ 5V | ±12V | 380pF @ 10V | - | 236mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SC-89-6 | SOT-563, SOT-666 |
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Infineon Technologies |
MOSFET N-CH 34V 49A 8TDSON |
5.436 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 34V | 14A (Ta), 49A (Tc) | 4.5V, 10V | 8mOhm @ 30A, 10V | 2.2V @ 250µA | 14nC @ 10V | ±20V | 1220pF @ 15V | - | 2.5W (Ta), 30W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 600V 2.4A TO252-3 |
5.076 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 2.4A (Tc) | 10V | 2Ohm @ 760mA, 10V | 3.5V @ 60µA | 6.7nC @ 10V | ±20V | 140pF @ 100V | - | 22.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 600V 1.7A TO252-3 |
4.230 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 1.7A (Tc) | 10V | 3.3Ohm @ 500mA, 10V | 3.5V @ 40µA | 4.6nC @ 10V | ±20V | 93pF @ 100V | - | 18.1W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 600V 9.2A TO252 |
5.940 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 9.2A (Tc) | 10V | 450mOhm @ 3.4A, 10V | 3.5V @ 280µA | 28nC @ 10V | ±20V | 620pF @ 100V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 600V 5.7A TO252 |
5.130 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 5.7A (Tc) | 10V | 750mOhm @ 2A, 10V | 3.5V @ 170µA | 17.2nC @ 10V | ±20V | 373pF @ 100V | - | 48W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 650V 7.3A TO252-3 |
6.318 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 7.3A (Tc) | 10V | 600mOhm @ 2.1A, 10V | 3.5V @ 210µA | 23nC @ 10V | ±20V | 440pF @ 100V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia |
MOSFET N-CH 40V 100A TO220AB |
2.700 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 4mOhm @ 25A, 10V | 4V @ 1mA | 97nC @ 10V | ±20V | 5708pF @ 25V | - | 203W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Nexperia |
MOSFET N-CH 40V 100A D2PAK |
7.002 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 3.6mOhm @ 25A, 10V | 4V @ 1mA | 97nC @ 10V | ±20V | 5708pF @ 25V | - | 203W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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NXP |
MOSFET N-CH 30V QFN3333 |
3.708 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 21A (Tc) | 4.5V, 10V | 13mOhm @ 5A, 10V | 2.15V @ 1mA | 12.2nC @ 10V | ±20V | 768pF @ 15V | - | 41W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN3333 (3.3x3.3) | 8-VDFN Exposed Pad |
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NXP |
MOSFET N-CH 60V QFN3333 |
6.282 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 40A (Tc) | 10V | 14mOhm @ 10A, 10V | 4V @ 1mA | 19.6nC @ 10V | ±20V | 1264pF @ 30V | - | 65W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN3333 (3.3x3.3) | 8-VDFN Exposed Pad |
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NXP |
MOSFET N-CH 55V 28.43A LFPAK |
7.506 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 28.43A (Tc) | 10V | 35mOhm @ 15A, 10V | 4V @ 1mA | 13.1nC @ 10V | ±20V | 781pF @ 25V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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NXP |
MOSFET N-CH 75V 21.4A LFPAK |
6.174 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 75V | 21.4A (Tc) | 10V | 54mOhm @ 10A, 10V | 4V @ 1mA | 12nC @ 10V | ±20V | 803pF @ 25V | - | 59W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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NXP |
MOSFET N-CH QFN3333 |
2.466 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 15A (Tc) | 4.5V, 10V | 17mOhm @ 5A, 10V | 2.15V @ 1mA | 10nC @ 10V | ±20V | 526pF @ 15V | - | 37W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN3333 (3.3x3.3) | 8-VDFN Exposed Pad |
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NXP |
MOSFET N-CH QFN3333 |
4.734 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 27A (Tc) | 10V | 32mOhm @ 10A, 10V | 4V @ 1mA | 23nC @ 10V | ±20V | 1350pF @ 50V | - | 65W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN3333 (3.3x3.3) | 8-VDFN Exposed Pad |
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NXP |
MOSFET N-CH 30V QFN3333 |
7.146 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 40A (Tc) | 4.5V, 10V | 3.6mOhm @ 10A, 10V | 2.15V @ 1mA | 37nC @ 10V | ±20V | 2061pF @ 15V | - | 71W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN3333 (3.3x3.3) | 8-VDFN Exposed Pad |
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NXP |
MOSFET N-CH 30V QFN3333 |
2.916 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 40A (Tc) | 4.5V, 10V | 5.8mOhm @ 10A, 10V | 2.15V @ 1mA | 24nC @ 10V | ±20V | 1316pF @ 15V | - | 55W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN3333 (3.3x3.3) | 8-VDFN Exposed Pad |
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Nexperia |
MOSFET N-CH 30V DPAK |
3.510 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 75A (Tc) | 10V | 4.5mOhm @ 25A, 10V | 4V @ 1mA | 62nC @ 10V | ±20V | 3760pF @ 25V | - | 157W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia |
MOSFET N-CH 40V 75A DPAK |
4.446 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 75A (Tc) | 10V | 5mOhm @ 25A, 10V | 4V @ 1mA | 60nC @ 10V | ±20V | 3820pF @ 25V | - | 157W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia |
MOSFET N-CH 30V 75A D2PAK |
4.032 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 75A (Tc) | 10V | 7mOhm @ 25A, 10V | 4V @ 1mA | 36nC @ 10V | ±20V | 2427pF @ 25V | - | 157W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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NXP |
MOSFET N-CH 100V 64A D2PAK |
8.442 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 64A (Tc) | 10V | 19mOhm @ 25A, 10V | 4V @ 1mA | 53nC @ 10V | ±20V | 3400pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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NXP |
MOSFET N-CH 30V 100A D2PAK |
3.402 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Tc) | 10V | 1.8mOhm @ 25A, 10V | 4V @ 1mA | 150nC @ 10V | ±20V | 10349pF @ 25V | - | 333W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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NXP |
MOSFET N-CH 40V 75A D2PAK |
3.222 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 75A (Tc) | 10V | 4.3mOhm @ 25A, 10V | 4V @ 1mA | 69nC @ 10V | ±20V | 4824pF @ 25V | - | 254W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Nexperia |
MOSFET N-CH 75V 75A D2PAK |
5.706 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 75V | 75A (Tc) | 10V | 9mOhm @ 25A, 10V | 4V @ 1mA | 113.1nC @ 10V | ±20V | 4860pF @ 25V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET P-CH 30V 6A PQFN |
7.506 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 6A (Ta), 13A (Tc) | 4.5V, 10V | 37mOhm @ 7.8A, 10V | 2.4V @ 25µA | 13nC @ 10V | ±20V | 580pF @ 25V | - | 2.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-PQFN (2x2) | 6-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 25V 9.9A PQFN |
6.570 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 9.9A (Ta), 21A (Tc) | 4.5V, 10V | 13mOhm @ 8.5A, 10V | 2.35V @ 25µA | 10.4nC @ 10V | ±20V | 653pF @ 10V | - | 2.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-PQFN (2x2) | 6-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 30V 8.8A PQFN |
2.124 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 8.8A (Ta), 19A (Tc) | 4.5V, 10V | 16mOhm @ 8.5A, 10V | 2.35V @ 25µA | 8.7nC @ 10V | ±20V | 600pF @ 25V | - | 2.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-6 | 6-PowerVDFN |
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ON Semiconductor |
MOSFET N-CH 30V 11.5A LL 8MLP |
7.398 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 11.5A (Ta) | 4.5V, 10V | 10.5mOhm @ 11.5A, 10V | 3V @ 250µA | 19nC @ 5V | ±20V | 2141pF @ 15V | - | 900mW (Ta), 2.1W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-MLP (3.3x3.3) | 8-PowerWDFN |