Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 849/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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ON Semiconductor |
MOSFET N-CH 60V 24A DPAK |
8.064 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 24A (Tc) | 10V | 37mOhm @ 24A, 10V | 4V @ 250µA | 48nC @ 10V | ±20V | 1200pF @ 25V | - | 55W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 60V 90A DPAK |
4.050 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 98A (Tc) | 10V | 5.7mOhm @ 45A, 10V | 4V @ 250µA | 82nC @ 10V | ±20V | 6000pF @ 25V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET 30V 57A NFETU8FL |
6.120 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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ON Semiconductor |
MOSFET N-CH 40V 16.4A DPAK |
7.578 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 16.4A (Ta), 101A (Tc) | 5V, 10V | 4.4mOhm @ 50A, 10V | 3.5V @ 250µA | 100nC @ 10V | ±20V | 5300pF @ 12V | - | 2.5W (Ta), 93.75W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET P-CH 40V DPAK |
3.222 |
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PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 40V | 8.4A (Ta), 32A (Tc) | - | 27mOhm @ 8.4A, 10V | 3V @ 250µA | 27nC @ 5V | - | 2380pF @ 20V | - | - | -55°C ~ 150°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET P-CH 20V 2.9A 6MLP |
8.388 |
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PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 20V | 2.9A (Ta) | 1.5V, 4.5V | 112mOhm @ 2.9A, 4.5V | 1V @ 250µA | 6.5nC @ 4.5V | ±8V | 400pF @ 10V | Schottky Diode (Isolated) | 1.4W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SC-75, MicroFET | 6-WFDFN Exposed Pad |
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ON Semiconductor |
MOSFET N-CH 40V TO-220AB-3 |
4.248 |
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Automotive, AEC-Q101, PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 40V | 20A (Ta), 80A (Tc) | 10V | 3.5mOhm @ 80A, 10V | 4V @ 250µA | 185nC @ 10V | ±20V | 9310pF @ 25V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 500V TO-220FP-3 |
2.268 |
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UniFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 5A (Tc) | 10V | 1.4Ohm @ 2.5A, 10V | 5V @ 250µA | 15nC @ 10V | ±30V | 640pF @ 25V | - | 28W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F (LG-Formed) | TO-220-3 Full Pack, Formed Leads |
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ON Semiconductor |
MOSFET N-CH 500V 24A TO-3PN |
3.762 |
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FRFET® | N-Channel | MOSFET (Metal Oxide) | 500V | 24A (Tc) | 10V | 200mOhm @ 12A, 10V | 5V @ 250µA | 120nC @ 10V | ±30V | 4500pF @ 25V | - | 290W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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ON Semiconductor |
MOSFET N-CH 500V 24A TO-3PN |
8.838 |
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FRFET® | N-Channel | MOSFET (Metal Oxide) | 500V | 24A (Tc) | 10V | 200mOhm @ 12A, 10V | 5V @ 250µA | 120nC @ 10V | ±30V | 4500pF @ 25V | - | 290W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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ON Semiconductor |
MOSFET N-CH 500V 28.4A TO-3PN |
5.328 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 500V | 28.4A (Tc) | 10V | 160mOhm @ 14.2A, 10V | 5V @ 250µA | 140nC @ 10V | ±30V | 5600pF @ 25V | - | 310W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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ON Semiconductor |
MOSFET N-CH 250V 25.5A I2PAK |
4.464 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 250V | 25.5A (Tc) | 10V | 110mOhm @ 12.75A, 10V | 5V @ 250µA | 65nC @ 10V | ±30V | 1800pF @ 25V | - | 3.13W (Ta), 417W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAK (TO-262) | TO-262-3 Long Leads, I²Pak, TO-262AA |
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ON Semiconductor |
MOSFET N-CH 200V 19A TO-220F |
5.976 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 19A (Tc) | 10V | 170mOhm @ 9.5A, 10V | 4V @ 250µA | 53nC @ 10V | ±30V | 1080pF @ 25V | - | 43W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F-3 (Y-Forming) | TO-220-3 Full Pack, Formed Leads |
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Diodes Incorporated |
MOSFET N-CH 30V 14.5A TO252-3L |
5.706 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 14.5A (Ta) | 4.5V, 10V | 5mOhm @ 20A, 10V | 2V @ 250µA | 46.9nC @ 4.5V | ±20V | 4342pF @ 15V | - | 1.68W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 30V 68A IPAK-3 |
2.448 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 13A (Ta), 68A (Tc) | 4.5V, 10V | 4.7mOhm @ 30A, 10V | 2.5V @ 250µA | 17.2nC @ 4.5V | ±20V | 1710pF @ 15V | - | 1.39W (Ta), 38.5W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Stub Leads, IPak |
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ON Semiconductor |
MOSFET N-CH 30V 41A IPAK-3 |
5.238 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 9.4A (Ta), 41A (Tc) | 4.5V, 10V | 9mOhm @ 30A, 10V | 2.5V @ 250µA | 9nC @ 4.5V | ±20V | 837pF @ 15V | - | 1.38W (Ta), 26.3W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Stub Leads, IPak |
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ON Semiconductor |
MOSFET N-CH 60V 8A 8-WDFN |
5.526 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 8A (Ta) | 4.5V, 10V | 24mOhm @ 7.5A, 10V | 3V @ 250µA | 25nC @ 10V | ±20V | 850pF @ 25V | - | 3.1W (Ta), 19W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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Cree/Wolfspeed |
MOSFET N-CH 1200V 42A TO-247-3 |
7.776 |
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Z-FET™ | N-Channel | SiCFET (Silicon Carbide) | 1200V | 42A (Tc) | 20V | 110mOhm @ 20A, 20V | 4V @ 1mA | 90.8nC @ 20V | +25V, -5V | 1915pF @ 800V | - | 215W (Tc) | -55°C ~ 135°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 30V 25A 8DFN |
6.174 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 25A (Ta), 85A (Tc) | 4.5V, 10V | 2.2mOhm @ 20A, 10V | 2V @ 250µA | 155nC @ 10V | ±20V | 9000pF @ 15V | - | 2.1W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
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Infineon Technologies |
MOSFET N-CH 600V 9.2A TO220 |
2.898 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 9.2A (Tc) | 10V | 450mOhm @ 3.4A, 10V | 3.5V @ 280µA | 28nC @ 10V | ±20V | 620pF @ 100V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 600V 8.1A TO220 |
3.132 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 8.1A (Tc) | 10V | 520mOhm @ 2.8A, 10V | 3.5V @ 230µA | 23.4nC @ 10V | ±20V | 512pF @ 100V | - | 29W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 80V 100A TO220-3 |
2.250 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 100A (Tc) | 6V, 10V | 3.75mOhm @ 100A, 10V | 3.5V @ 155µA | 117nC @ 10V | ±20V | 8110pF @ 40V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 600V 9.2A TO220 |
3.492 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 9.2A (Tc) | 10V | 450mOhm @ 3.4A, 10V | 3.5V @ 280µA | 28nC @ 10V | ±20V | 620pF @ 100V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 600V 8.1A TO220 |
6.966 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 8.1A (Tc) | 10V | 520mOhm @ 2.8A, 10V | 3.5V @ 230µA | 23.4nC @ 10V | ±20V | 512pF @ 100V | - | 66W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 600V 7.3A TO220 |
3.564 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 7.3A (Tc) | 10V | 600mOhm @ 2.4A, 10V | 3.5V @ 200µA | 20.5nC @ 10V | ±20V | 440pF @ 100V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 600V 5.7A TO220 |
7.002 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 5.7A (Tc) | 10V | 750mOhm @ 2A, 10V | 3.5V @ 170µA | 17.2nC @ 10V | ±20V | 373pF @ 100V | - | 48W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 650V 13.8A TO220 |
8.748 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 13.8A (Tc) | 10V | 280mOhm @ 4.4A, 10V | 3.5V @ 440µA | 45nC @ 10V | ±20V | 950pF @ 100V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 650V 10.6A TO220 |
7.686 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 10.6A (Tc) | 10V | 380mOhm @ 3.2A, 10V | 3.5V @ 320µA | 39nC @ 10V | ±20V | 710pF @ 100V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 650V 7.3A TO220 |
4.086 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 7.3A (Tc) | 10V | 600mOhm @ 2.1A, 10V | 3.5V @ 210µA | 23nC @ 10V | ±20V | 440pF @ 100V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 650V 13.8A TO247 |
5.778 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 13.8A (Tc) | 10V | 280mOhm @ 4.4A, 10V | 3.5V @ 440µA | 45nC @ 10V | ±20V | 950pF @ 100V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |