Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 848/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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Vishay Siliconix |
MOSFET N-CH 30V 20A 1212-8 PPAK |
3.400 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 20A (Tc) | 2.5V, 4.5V | 16mOhm @ 10A, 4.5V | 1.5V @ 250µA | 33nC @ 10V | ±12V | 795pF @ 15V | - | 3.4W (Ta), 31W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Vishay Siliconix |
MOSFET N-CH 12V 35A 1212-8 PPAK |
6.084 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 12V | 35A (Tc) | 4.5V, 10V | 3.25mOhm @ 20A, 10V | 2.2V @ 250µA | 41nC @ 10V | ±20V | 1700pF @ 6V | - | 3.8W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Vishay Siliconix |
MOSFET N-CH 30V 35A PPAK 1212-8 |
4.356 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 35A (Tc) | 4.5V, 10V | 5.1mOhm @ 20A, 10V | 2.2V @ 250µA | 55nC @ 10V | ±20V | 1800pF @ 15V | - | 3.8W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Vishay Siliconix |
MOSFET N-CH 100V 6.5A DPAK |
4.140 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 6.5A (Tc) | 4.5V, 10V | 200mOhm @ 3A, 10V | 3V @ 250µA | 4nC @ 5V | ±20V | 240pF @ 25V | - | 1.25W (Ta), 20W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET P-CH 60V 8.4A DPAK |
4.104 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 60V | 8.4A (Tc) | 4.5V, 10V | 155mOhm @ 5A, 10V | 3V @ 250µA | 19nC @ 10V | ±20V | 450pF @ 25V | - | 2W (Ta), 25W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 20V 50A DPAK |
7.074 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 50A (Tc) | 4.5V, 10V | 4.3mOhm @ 20A, 10V | 3V @ 250µA | 60nC @ 4.5V | ±20V | 5000pF @ 10V | - | 8.3W (Ta), 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 20V DPAK |
8.622 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 20V | - | 4.5V, 10V | 9.5mOhm @ 20A, 10V | 3V @ 250µA | 16nC @ 4.5V | ±20V | 1300pF @ 10V | - | 6.5W (Ta), 39.5W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 60V 96A DPAK |
2.250 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 96A (Tc) | 4.5V, 10V | 7.4mOhm @ 20A, 10V | 3V @ 250µA | 144nC @ 10V | ±20V | 5800pF @ 25V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 100V 8.2A DPAK |
2.196 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 8.2A (Ta), 50A (Tc) | 10V | 18.5mOhm @ 15A, 10V | 5V @ 250µA | 75nC @ 10V | ±20V | 2600pF @ 50V | - | 3W (Ta), 136.4W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET P-CH 40V 60A DPAK |
2.376 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 40V | 60A (Tc) | 4.5V, 10V | 13mOhm @ 30A, 10V | 3V @ 250µA | 95nC @ 10V | ±20V | 3120pF @ 25V | - | 3W (Ta), 93.7W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 75V 110A D2PAK |
5.832 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 110A (Tc) | 10V | 7mOhm @ 20A, 10V | 4.5V @ 250µA | 105nC @ 10V | ±20V | 4250pF @ 30V | - | 3.75W (Ta), 208.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 30V 85A D2PAK |
8.694 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 85A (Tc) | 4.5V, 10V | 6mOhm @ 20A, 10V | 3V @ 250µA | 65nC @ 10V | ±20V | 3100pF @ 25V | - | 3.75W (Ta), 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 60V 90A D2PAK |
8.694 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 90A (Tc) | 10V | 4.4mOhm @ 20A, 10V | 4.5V @ 250µA | 160nC @ 10V | ±20V | 6190pF @ 30V | - | 3.75W (Ta), 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 75V 90A D2PAK |
6.858 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 90A (Tc) | 10V | 6.2mOhm @ 20A, 10V | 4.5V @ 250µA | 115nC @ 10V | ±20V | 4620pF @ 30V | - | 3.75W (Ta), 272W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 30V 50A TO-220AB |
4.050 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 5.1mOhm @ 22A, 10V | 2.5V @ 250µA | 66nC @ 10V | ±20V | 2780pF @ 15V | - | 2.7W (Ta), 59.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 40V 90A TO-220AB |
4.896 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 90A (Tc) | 4.5V, 10V | 3.3mOhm @ 22A, 10V | 2.5V @ 250µA | 131nC @ 10V | ±20V | 5286pF @ 20V | - | 3.1W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 25V 42A POWER56 |
2.934 |
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Dual Cool™, PowerTrench®, SyncFET™ | N-Channel | MOSFET (Metal Oxide) | 25V | 42A (Ta), 49A (Tc) | 4.5V, 10V | 1.25mOhm @ 32A, 10V | 3V @ 1mA | 119nC @ 10V | ±20V | 7770pF @ 13V | - | 3.3W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | Dual Cool™56 | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 25V 39A POWER56 |
5.706 |
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Dual Cool™, PowerTrench®, SyncFET™ | N-Channel | MOSFET (Metal Oxide) | 25V | 39A (Ta), 49A (Tc) | 4.5V, 10V | 1.45mOhm @ 30A, 10V | 3V @ 1mA | 93nC @ 10V | ±20V | 5945pF @ 13V | - | 3.3W (Ta), 89W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | Dual Cool™56 | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 25V 34A POWER56 |
2.034 |
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Dual Cool™, PowerTrench®, SyncFET™ | N-Channel | MOSFET (Metal Oxide) | 25V | 34A (Ta), 49A (Tc) | 4.5V, 10V | 1.95mOhm @ 28A, 10V | 3V @ 1mA | 69nC @ 10V | ±20V | 4515pF @ 13V | - | 3.3W (Ta), 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | Dual Cool™56 | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 25V 28A POWER56 |
2.430 |
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Dual Cool™, PowerTrench®, SyncFET™ | N-Channel | MOSFET (Metal Oxide) | 25V | 28A (Ta), 49A (Tc) | 4.5V, 10V | 2.9mOhm @ 23A, 10V | 3V @ 1mA | 45nC @ 10V | ±20V | 2780pF @ 13V | - | 3.3W (Ta), 60W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | Dual Cool™56 | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 20V 7A 6-MICROFET |
7.686 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 20V | 7A (Ta) | 1.5V, 4.5V | 26mOhm @ 7A, 4.5V | 1V @ 250µA | 13nC @ 4.5V | ±8V | 1025pF @ 10V | - | 2.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | MicroFet 1.6x1.6 Thin | 6-PowerUFDFN |
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ON Semiconductor |
MOSFET N-CH 30V WLCSP 1X1 |
3.366 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 1.1A (Ta) | 3.2V, 4.5V | 462mOhm @ 300mA, 4.5V | 1.5V @ 250µA | 1nC @ 4.5V | +5.5V, -0.3V | 85pF @ 15V | Schottky Diode (Body) | 1W (Ta) | -55°C ~ 125°C (TJ) | Surface Mount | 4-WLCSP (0.96x0.96) | 4-UFBGA, WLCSP |
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Infineon Technologies |
MOSFET N-CH 30V 20A PQFN |
8.532 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 20A (Ta), 40A (Tc) | 4.5V, 10V | 4.3mOhm @ 20A, 10V | 2.35V @ 50µA | 27nC @ 10V | ±20V | 1797pF @ 25V | - | 2.8W (Ta), 37W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (3x3) | 8-VQFN Exposed Pad |
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Infineon Technologies |
MOSFET N-CH 30V 20A PQFN |
2.100 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 20A (Ta), 40A (Tc) | 4.5V, 10V | 4.3mOhm @ 20A, 10V | 2.35V @ 50µA | 27nC @ 10V | ±20V | 1797pF @ 25V | - | 2.8W (Ta), 37W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (3x3) | 8-VQFN Exposed Pad |
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Infineon Technologies |
MOSFET N-CH 30V 21A PQFN |
6.318 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 21A (Ta), 40A (Tc) | 4.5V, 10V | 3.8mOhm @ 20A, 10V | 2.35V @ 50µA | 31nC @ 10V | ±20V | 2155pF @ 25V | - | 2.7W (Ta), 37W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (3x3) | 8-VQFN Exposed Pad |
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Infineon Technologies |
MOSFET N-CH 30V 14A PQFN |
7.380 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 14A (Ta), 40A (Tc) | 4.5V, 10V | 7.8mOhm @ 12A, 10V | 2.35V @ 25µA | 16nC @ 10V | ±20V | 1050pF @ 25V | - | 2.5W (Ta), 27W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (3x3) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 20V 26A PQFN |
7.812 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 26A (Ta), 40A (Tc) | 2.5V, 10V | 2.5mOhm @ 20A, 4.5V | 1.1V @ 50µA | 78nC @ 4.5V | ±12V | 3620pF @ 10V | - | 2.7W (Ta), 37W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (3x3) | 8-VQFN Exposed Pad |
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Infineon Technologies |
MOSFET N-CH 30V 21A PQFN |
6.894 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 21A (Ta), 40A (Tc) | 2.5V, 10V | 3.5mOhm @ 20A, 4.5V | 1.1V @ 50µA | 62nC @ 4.5V | ±12V | 3170pF @ 25V | - | 2.7W (Ta), 37W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (3x3) | 8-VQFN Exposed Pad |
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ON Semiconductor |
MOSFET 30V 50A NFETU8FL |
2.088 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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ON Semiconductor |
MOSFET 60V 12A 196 |
2.322 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |