Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 845/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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Infineon Technologies |
MOSFET N-CH 40V 14A 8-SOIC |
2.088 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 14A (Ta) | 7V | 10mOhm @ 14A, 7V | 2V @ 250µA | 100nC @ 7V | ±8V | 3520pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 200V 3.7A 8-SOIC |
3.978 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 3.7A (Ta) | 10V | 79mOhm @ 2.2A, 10V | 2.5V @ 250µA | 59nC @ 10V | ±20V | 1820pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 150V 5.1A 8-SOIC |
3.294 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 5.1A (Ta) | 10V | 44mOhm @ 3.1A, 10V | 4V @ 250µA | 53nC @ 10V | ±20V | 1783pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 20V 1.7A MICRO8 |
7.614 |
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FETKY™ | P-Channel | MOSFET (Metal Oxide) | 20V | 1.7A (Ta) | 2.7V, 4.5V | 270mOhm @ 1.2A, 4.5V | 700mV @ 250µA | 8.2nC @ 4.5V | ±12V | 240pF @ 15V | Schottky Diode (Isolated) | 1.25W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro8™ | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
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Infineon Technologies |
MOSFET P-CH 20V 3.6A MICRO8 |
3.564 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 3.6A (Ta) | 2.7V, 4.5V | 90mOhm @ 2.4A, 4.5V | 700mV @ 250µA | 20nC @ 4.5V | ±12V | 590pF @ 15V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro8™ | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
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Infineon Technologies |
MOSFET P-CH 20V 8.6A 8-TSSOP |
7.326 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 8.6A (Tc) | 2.5V, 4.5V | 15mOhm @ 8.6A, 4.5V | 1.2V @ 250µA | 89nC @ 5V | ±12V | 4300pF @ 15V | - | 1.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP | 8-TSSOP (0.173", 4.40mm Width) |
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Infineon Technologies |
MOSFET P-CH 12V 10A 8-TSSOP |
7.560 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 12V | 10A (Ta) | 1.8V, 4.5V | 11mOhm @ 10A, 4.5V | 1.2V @ 250µA | 100nC @ 4.5V | ±8V | 5050pF @ 10V | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP | 8-TSSOP (0.173", 4.40mm Width) |
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Infineon Technologies |
MOSFET P-CH 40V 4.6A 8-TSSOP |
6.192 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 40V | 4.6A (Ta) | 4.5V, 10V | 46mOhm @ 4.6A, 10V | 3V @ 250µA | 38nC @ 4.5V | ±20V | 3150pF @ 25V | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP | 8-TSSOP (0.173", 4.40mm Width) |
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Infineon Technologies |
MOSFET P-CH 30V 8A 8-TSSOP |
8.694 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 8A (Tc) | 4.5V, 10V | 18mOhm @ 8A, 10V | 2.5V @ 250µA | 88nC @ 10V | ±20V | 2774pF @ 25V | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP | 8-TSSOP (0.173", 4.40mm Width) |
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Infineon Technologies |
MOSFET P-CH 30V 7A 8-TSSOP |
3.078 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 7A (Ta) | 4.5V, 10V | 22mOhm @ 7A, 10V | 2.5V @ 250µA | 72nC @ 10V | ±20V | 2211pF @ 25V | - | 1.51W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP | 8-TSSOP (0.173", 4.40mm Width) |
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Infineon Technologies |
MOSFET P-CH 20V 7A 8-TSSOP |
6.426 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 7A (Ta) | 2.5V, 4.5V | 22mOhm @ 7A, 4.5V | 1.2V @ 250µA | 47nC @ 4.5V | ±12V | 2361pF @ 15V | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP | 8-TSSOP (0.173", 4.40mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 8.3A 8-SOIC |
5.670 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 8.3A (Ta) | 4.5V | 25mOhm @ 7A, 4.5V | 1V @ 250µA | 17nC @ 5V | ±12V | - | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 13.6A 8-SO |
8.694 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 13.6A (Ta) | 4.5V | 12.5mOhm @ 10A, 4.5V | 1V @ 250µA | 14nC @ 5V | ±20V | 1010pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 40V 30A DPAK |
3.132 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 30A (Tc) | 10V | 9.2mOhm @ 30A, 10V | 4V @ 250µA | 71nC @ 10V | ±20V | 2150pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 30A DPAK |
3.726 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 30A (Tc) | 10V | 13mOhm @ 30A, 10V | 4V @ 250µA | 93nC @ 10V | ±20V | 2030pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 20V 60A DPAK |
4.284 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 60A (Tc) | 4.5V, 10V | 8.4mOhm @ 15A, 10V | 2.55V @ 250µA | 14nC @ 4.5V | ±20V | 1190pF @ 10V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 17A D2PAK |
6.174 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 17A (Tc) | 10V | 70mOhm @ 10A, 10V | 4V @ 250µA | 20nC @ 10V | ±20V | 370pF @ 25V | - | 3.8W (Ta), 45W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 130A D2PAK |
6.066 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 130A (Tc) | 4.5V, 10V | 6.5mOhm @ 78A, 10V | 1V @ 250µA | 100nC @ 4.5V | ±16V | 5330pF @ 25V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 105A D2PAK |
6.210 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 105A (Tc) | 4.5V, 10V | 6mOhm @ 21A, 10V | 2.25V @ 250µA | 35nC @ 4.5V | ±20V | 2840pF @ 15V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET P-CH 20V 4.4A 6-TSOP |
4.194 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 4.4A (Ta) | 2.5V, 4.5V | 65mOhm @ 4.4A, 4.5V | 1.2V @ 250µA | 15nC @ 4.5V | ±12V | 1079pF @ 10V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro6™(TSOP-6) | SOT-23-6 Thin, TSOT-23-6 |
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Vishay Siliconix |
MOSFET N-CH 20V SC-89-6 |
2.700 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 20V | - | 1.8V, 4.5V | 89mOhm @ 1.32A, 4.5V | 950mV @ 250µA | 8.7nC @ 5V | ±8V | 400pF @ 10V | - | 236mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SC-89-6 | SOT-563, SOT-666 |
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Vishay Siliconix |
MOSFET N-CH 20V 400MA SC-70-3 |
7.344 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 400mA (Tc) | 2.5V, 4.5V | 850mOhm @ 250mA, 4.5V | 1V @ 250µA | 0.84nC @ 4.5V | ±8V | 35pF @ 10V | - | 190mW (Ta), 200mW (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SC-70-3 | SC-70, SOT-323 |
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Vishay Siliconix |
MOSFET N-CH 30V 0.9A SC-70-3 |
4.050 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 900mA (Tc) | 2.5V, 4.5V | 270mOhm @ 900mA, 4.5V | 1.3V @ 250µA | 2.7nC @ 4.5V | ±12V | 100pF @ 15V | - | 340mW (Ta), 370mW (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SC-70-3 | SC-70, SOT-323 |
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Vishay Siliconix |
MOSFET P-CH 8V 0.86A SC-70-3 |
8.730 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 8V | 860mA (Ta) | 1.8V, 4.5V | 280mOhm @ 1A, 4.5V | 450mV @ 250µA (Min) | 4nC @ 4.5V | ±8V | - | - | 290mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SC-70-3 | SC-70, SOT-323 |
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Vishay Siliconix |
MOSFET P-CH 12V 0.85A SC-70-3 |
8.622 |
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- | P-Channel | MOSFET (Metal Oxide) | 12V | 850mA (Ta) | 1.8V, 4.5V | 290mOhm @ 1A, 4.5V | 450mV @ 250µA (Min) | 5nC @ 4.5V | ±8V | - | - | 290mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SC-70-3 | SC-70, SOT-323 |
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Vishay Siliconix |
MOSFET N-CH 20V 1.6A SC-70-6 |
4.392 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 1.6A (Ta) | 2.5V, 4.5V | 150mOhm @ 1.7A, 4.5V | 600mV @ 250µA (Min) | 4nC @ 4.5V | ±12V | - | - | 568mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SC-70-6 (SOT-363) | 6-TSSOP, SC-88, SOT-363 |
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Vishay Siliconix |
MOSFET P-CH 20V 2.1A SC-70-6 |
6.012 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 2.1A (Tc) | 2.5V, 4.5V | 140mOhm @ 1.6A, 4.5V | 1.5V @ 250µA | 8nC @ 4.5V | ±12V | 281pF @ 10V | - | 600mW (Ta), 900mW (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SC-70-6 (SOT-363) | 6-TSSOP, SC-88, SOT-363 |
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Vishay Siliconix |
MOSFET P-CH 8V 1.6A SC-70-6 |
7.812 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 8V | 1.6A (Tc) | 1.8V, 4.5V | 112mOhm @ 2.8A, 4.5V | 950mV @ 250µA | 5.5nC @ 4.5V | ±8V | 305pF @ 4V | - | 1.47W (Ta), 2.27W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SC-70-6 (SOT-363) | 6-TSSOP, SC-88, SOT-363 |
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Vishay Siliconix |
MOSFET N-CH 20V 3.1A SC-70-6 |
8.280 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 3.1A (Ta) | 1.8V, 4.5V | 65mOhm @ 3.9A, 4.5V | 1.2V @ 250µA | 7.5nC @ 4.5V | ±8V | - | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SC-70-6 (SOT-363) | 6-TSSOP, SC-88, SOT-363 |
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Vishay Siliconix |
MOSFET P-CH 20V 2.3A SC-70-6 |
6.912 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 2.3A (Ta) | 1.8V, 4.5V | 115mOhm @ 2.9A, 4.5V | 450mV @ 100µA (Min) | 8nC @ 4.5V | ±12V | - | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SC-70-6 (SOT-363) | 6-TSSOP, SC-88, SOT-363 |