Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 796/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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Infineon Technologies |
MOSFET N-CH 20V 2.4A MICRO8 |
3.690 |
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FETKY™ | N-Channel | MOSFET (Metal Oxide) | 20V | 2.4A (Ta) | 2.7V, 4.5V | 135mOhm @ 1.7A, 4.5V | 700mV @ 250µA | 8nC @ 4.5V | ±12V | 260pF @ 15V | Schottky Diode (Isolated) | 1.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro8™ | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
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Infineon Technologies |
MOSFET N-CH 20V 37A DPAK |
8.154 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 37A (Tc) | 4.5V, 10V | 15mOhm @ 15A, 10V | 2.55V @ 250µA | 7.1nC @ 4.5V | ±20V | 560pF @ 10V | - | 35W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 20V 180A D2PAK |
3.258 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 180A (Tc) | 4.5V, 10V | 4mOhm @ 90A, 10V | 3V @ 250µA | 79nC @ 4.5V | ±20V | 5090pF @ 10V | - | 210W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 10A DPAK |
8.838 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 10A (Tc) | 4.5V, 10V | 140mOhm @ 6A, 10V | 1V @ 250µA | 7.9nC @ 5V | ±16V | 265pF @ 25V | - | 28W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 14A DPAK |
8.118 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 14A (Tc) | 10V | 115mOhm @ 8.4A, 10V | 4V @ 250µA | 32nC @ 10V | ±20V | 740pF @ 25V | - | 56W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 150V 33A TO-262-3 |
8.658 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 33A (Tc) | 10V | 56mOhm @ 20A, 10V | 5.5V @ 250µA | 90nC @ 10V | ±30V | 2020pF @ 25V | - | 3.8W (Ta), 170W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 30V 12A DIRECTFET |
4.986 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 12A (Ta), 49A (Tc) | 4.5V, 7V | 11.5mOhm @ 12A, 7V | 2.1V @ 250µA | 26nC @ 4.5V | ±12V | 2270pF @ 15V | - | 2.3W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MQ | DirectFET™ Isometric MQ |
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Infineon Technologies |
MOSFET N-CH 55V 16A DPAK |
5.274 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 16A (Tc) | 4.5V, 10V | 58mOhm @ 9.6A, 10V | 3V @ 250µA | 9.9nC @ 5V | ±16V | 380pF @ 25V | - | 35W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 20V 54A DPAK |
7.038 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 54A (Tc) | 4.5V, 10V | 14mOhm @ 26A, 10V | 3V @ 250µA | 17nC @ 4.5V | ±20V | 1060pF @ 10V | - | 3.8W (Ta), 71W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 27A DIRECTFET |
2.052 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 27A (Ta), 92A (Tc) | 4.5V, 10V | 3.4mOhm @ 25A, 10V | 2.5V @ 250µA | 72nC @ 4.5V | +20V, -12V | 6590pF @ 15V | - | 3.6W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MT | DirectFET™ Isometric MT |
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Infineon Technologies |
MOSFET N-CH 30V 27A DIRECTFET |
3.726 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 27A (Ta), 94A (Tc) | 4.5V, 7V | 3.3mOhm @ 25A, 10V | 2V @ 250µA | 75nC @ 4.5V | ±12V | 6930pF @ 15V | - | 3.6W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MT | DirectFET™ Isometric MT |
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Infineon Technologies |
MOSFET N-CH 30V 56A DPAK |
2.484 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 56A (Tc) | 4.5V, 10V | 9.5mOhm @ 15A, 10V | 2.25V @ 25µA | 14nC @ 4.5V | ±20V | 1150pF @ 15V | - | 50W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 250V 14A DPAK |
3.526 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 250V | 14A (Tc) | 10V | 260mOhm @ 8.4A, 10V | 5V @ 250µA | 35nC @ 10V | ±30V | 810pF @ 25V | - | 144W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 48A DPAK |
7.758 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 48A (Tc) | 10V | 25mOhm @ 29A, 10V | 5.5V @ 250µA | 89nC @ 10V | ±20V | 3430pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 40V 160A D2PAK-7 |
7.416 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 160A (Tc) | 10V | 1.6mOhm @ 160A, 10V | 4V @ 250µA | 260nC @ 10V | ±20V | 6930pF @ 25V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
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Infineon Technologies |
MOSFET N-CH 80V 70A DPAK |
6.948 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 80V | 70A (Tc) | 10V | 14mOhm @ 18A, 10V | 5.5V @ 250µA | 94nC @ 10V | ±20V | 3510pF @ 25V | - | 3.8W (Ta), 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 20V 5.1A FLIPFET |
6.300 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 5.1A (Ta) | 2.5V, 4.5V | 65mOhm @ 5.1A, 4.5V | 1.2V @ 250µA | 21nC @ 5V | ±12V | 1230pF @ 15V | - | 2.2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 4-FlipFet™ | 4-FlipFet™ |
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Infineon Technologies |
MOSFET N-CH 30V 13A DIRECTFET |
2.736 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 13A (Ta), 58A (Tc) | 4.5V, 10V | 7.3mOhm @ 13A, 10V | 2.4V @ 50µA | 17nC @ 4.5V | ±20V | 1320pF @ 15V | - | 2.2W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ ST | DirectFET™ Isometric ST |
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Infineon Technologies |
MOSFET N-CH 25V 12A DIRECTFET |
5.670 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 12A (Ta), 37A (Tc) | 4.5V, 10V | 5.9mOhm @ 12A, 10V | 2.4V @ 25µA | 13nC @ 4.5V | ±20V | 1190pF @ 13V | - | 1.8W (Ta), 15W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET S1 | DirectFET™ Isometric S1 |
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Diodes Incorporated |
MOSFET N-CH 20V 12A 8-SOIC |
5.184 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 12A (Ta) | 2.5V, 10V | 8mOhm @ 12A, 10V | 1.2V @ 250µA | 58.3nC @ 10V | ±12V | 2555pF @ 10V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Diodes Incorporated |
MOSFET N-CH 50V 280MA SOT-523 |
3.726 |
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- | N-Channel | MOSFET (Metal Oxide) | 50V | 280mA (Ta) | 1.8V, 2.7V | 3Ohm @ 200mA, 2.7V | 1.2V @ 250µA | - | ±20V | 50pF @ 25V | - | 150mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-523 | SOT-523 |
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Diodes Incorporated |
MOSFET N-CH 50V 280MA SC70-3 |
2.502 |
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- | N-Channel | MOSFET (Metal Oxide) | 50V | 280mA (Ta) | 1.8V, 2.7V | 3Ohm @ 200mA, 2.7V | 1.2V @ 250µA | - | ±20V | 50pF @ 25V | - | 200mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-323 | SC-70, SOT-323 |
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Diodes Incorporated |
MOSFET P-CH 30V 12A 8-SOIC |
3.834 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 20V | 16mOhm @ 8A, 10V | 2V @ 250µA | 30.7nC @ 10V | ±25V | 1655pF @ 20V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Diodes Incorporated |
MOSFET P-CH 30V 2.7A SOT23-3 |
7.992 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 2.7A (Ta) | 4.5V, 10V | 100mOhm @ 2.7A, 10V | 2.1V @ 250µA | - | ±20V | 227pF @ 10V | - | 1.08W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET N-CH 60V 265A TO-262 |
2.592 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 60V | 265A (Tc) | 10V | 2.5mOhm @ 75A, 10V | 4.5V @ 250µA | 226nC @ 10V | ±20V | 14885pF @ 25V | - | 395W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I2PAK (TO-262) | TO-262-3 Long Leads, I²Pak, TO-262AA |
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ON Semiconductor |
MOSFET N-CH 100V 5.8A DPAK |
4.968 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 5.8A (Tc) | 10V | 350mOhm @ 2.9A, 10V | 4V @ 250µA | 7.5nC @ 10V | ±25V | 250pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 200V 3.6A D2PAK |
7.380 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 3.6A (Tc) | 10V | 1.4Ohm @ 1.8A, 10V | 5V @ 250µA | 6.5nC @ 10V | ±30V | 220pF @ 25V | - | 3.13W (Ta), 45W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 60V 20A TSDSON-8 |
4.626 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 14A (Ta), 20A (Tc) | 4.5V, 10V | 6.7mOhm @ 20A, 10V | 2.2V @ 35µA | 62nC @ 10V | ±20V | 4800pF @ 30V | - | 2.1W (Ta), 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerVDFN |
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ON Semiconductor |
MOSFET N-CH 55V 75A TO-247 |
6.714 |
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UltraFET™ | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 7mOhm @ 75A, 10V | 4V @ 250µA | 268nC @ 20V | ±30V | 3565pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Diodes Incorporated |
MOSFET N-CH 100V 450MA TO92-3 |
7.722 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 450mA (Ta) | 5V, 10V | 1.5Ohm @ 1.5A, 10V | 2.4V @ 1mA | - | ±20V | 100pF @ 25V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | E-Line (TO-92 compatible) | E-Line-3 |