Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 630/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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Infineon Technologies |
MOSFET N-CH 150V 18A DPAK |
6.084 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 18A (Tc) | 10V | 125mOhm @ 11A, 10V | 5.5V @ 250µA | 43nC @ 10V | ±30V | 900pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 150V 18A DPAK |
4.500 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 18A (Tc) | 10V | 125mOhm @ 11A, 10V | 5.5V @ 250µA | 43nC @ 10V | ±30V | 900pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 150V 18A DPAK |
6.678 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 18A (Tc) | 10V | 125mOhm @ 11A, 10V | 5.5V @ 250µA | 43nC @ 10V | ±30V | 900pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 600V 1.4A DPAK |
7.470 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 1.4A (Tc) | 10V | 7Ohm @ 840mA, 10V | 4V @ 250µA | 14nC @ 10V | ±30V | 229pF @ 25V | - | 36W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 600V 1.4A DPAK |
5.796 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 1.4A (Tc) | 10V | 7Ohm @ 840mA, 10V | 4V @ 250µA | 14nC @ 10V | ±30V | 229pF @ 25V | - | 36W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 600V 1.4A DPAK |
2.214 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 1.4A (Tc) | 10V | 7Ohm @ 840mA, 10V | 4V @ 250µA | 14nC @ 10V | ±30V | 229pF @ 25V | - | 36W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 200V 2.6A DPAK |
2.412 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 2.6A (Tc) | 10V | 1.5Ohm @ 1.6A, 10V | 4V @ 250µA | 8.2nC @ 10V | ±20V | 140pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 200V 2.6A DPAK |
5.148 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 2.6A (Tc) | 10V | 1.5Ohm @ 1.6A, 10V | 4V @ 250µA | 8.2nC @ 10V | ±20V | 140pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 250V 2.2A DPAK |
8.766 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 2.2A (Tc) | 10V | 2Ohm @ 1.3A, 10V | 4V @ 250µA | 8.2nC @ 10V | ±20V | 140pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 250V 2.2A DPAK |
8.694 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 2.2A (Tc) | 10V | 2Ohm @ 1.3A, 10V | 4V @ 250µA | 8.2nC @ 10V | ±20V | 140pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 250V 2.2A DPAK |
6.264 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 2.2A (Tc) | 10V | 2Ohm @ 1.3A, 10V | 4V @ 250µA | 8.2nC @ 10V | ±20V | 140pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 250V 3.8A DPAK |
2.934 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 3.8A (Tc) | 10V | 1.1Ohm @ 2.3A, 10V | 4V @ 250µA | 14nC @ 10V | ±20V | 260pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 100V DPAK |
3.888 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | - | - | - | - | - | - | - | - | - | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 19A D-PAK |
4.824 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 19A (Tc) | 10V | 85mOhm @ 11A, 10V | 4V @ 250µA | 23nC @ 10V | ±20V | 420pF @ 25V | - | 50W (Tc) | - | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 400V 1.7A DPAK |
4.302 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 400V | 1.7A (Ta) | 10V | 3.6Ohm @ 1A, 10V | 4V @ 250µA | 12nC @ 10V | ±20V | 170pF @ 25V | - | 2.5W (Ta), 25W (Tc) | - | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 400V 1.7A DPAK |
7.920 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 400V | 1.7A (Ta) | 10V | 3.6Ohm @ 1A, 10V | 4V @ 250µA | 12nC @ 10V | ±20V | 170pF @ 25V | - | 2.5W (Ta), 25W (Tc) | - | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 400V 1.7A DPAK |
6.444 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 400V | 1.7A (Ta) | 10V | 3.6Ohm @ 1A, 10V | 4V @ 250µA | 12nC @ 10V | ±20V | 170pF @ 25V | - | 2.5W (Ta), 25W (Tc) | - | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 400V 1.7A DPAK |
6.930 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 400V | 1.7A (Ta) | 10V | 3.6Ohm @ 1A, 10V | 4V @ 250µA | 12nC @ 10V | ±20V | 170pF @ 25V | - | 2.5W (Ta), 25W (Tc) | - | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 400V 1.7A DPAK |
2.646 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 1.7A (Tc) | 10V | 3.6Ohm @ 1A, 10V | 4V @ 250µA | 12nC @ 10V | ±20V | 170pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 400V 1.7A DPAK |
8.766 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 1.7A (Tc) | 10V | 3.6Ohm @ 1A, 10V | 4V @ 250µA | 12nC @ 10V | ±20V | 170pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 400V 3.1A DPAK |
2.322 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 3.1A (Tc) | 10V | 1.8Ohm @ 1.9A, 10V | 4V @ 250µA | 20nC @ 10V | ±20V | 350pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 400V 3.1A DPAK |
6.030 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 3.1A (Tc) | 10V | 1.8Ohm @ 1.9A, 10V | 4V @ 250µA | 20nC @ 10V | ±20V | 350pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 33A DPAK |
5.688 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 33A (Tc) | 10V | 31mOhm @ 18A, 10V | 4V @ 250µA | 29nC @ 10V | ±20V | 750pF @ 25V | - | 57W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 33A DPAK |
4.014 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 33A (Tc) | 10V | 31mOhm @ 18A, 10V | 4V @ 250µA | 29nC @ 10V | ±20V | 750pF @ 25V | - | 57W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 16A DPAK |
3.618 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 16A (Tc) | 10V | 115mOhm @ 10A, 10V | 4V @ 250µA | 44nC @ 10V | ±20V | 640pF @ 25V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 27A DPAK |
2.988 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 27A (Tc) | 10V | 45mOhm @ 16A, 10V | 4V @ 250µA | 34nC @ 10V | ±20V | 700pF @ 25V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 27A DPAK |
2.376 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 27A (Tc) | 10V | 45mOhm @ 16A, 10V | 4V @ 250µA | 34nC @ 10V | ±20V | 700pF @ 25V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 27A DPAK |
5.742 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 27A (Tc) | 10V | 45mOhm @ 16A, 10V | 4V @ 250µA | 34nC @ 10V | ±20V | 700pF @ 25V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 500V 2.4A DPAK |
5.544 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 2.4A (Tc) | 10V | 3Ohm @ 1.4A, 10V | 4V @ 250µA | 19nC @ 10V | ±20V | 360pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 500V 2.4A DPAK |
5.382 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 2.4A (Tc) | 10V | 3Ohm @ 1.4A, 10V | 4V @ 250µA | 19nC @ 10V | ±20V | 360pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |