Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 546/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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Infineon Technologies |
MOSFET N-CH 600V 35A TO247 |
7.866 |
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CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 600V | 35A (Tc) | 10V | 60mOhm @ 15.9A, 10V | 4V @ 800µA | 68nC @ 10V | ±20V | 2850pF @ 400V | - | 162W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 800V 20A TO-247 |
2.736 |
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HiPerFET™, PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 800V | 20A (Tc) | 10V | 520mOhm @ 10A, 10V | 5V @ 4mA | 86nC @ 10V | ±30V | 4685pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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IXYS |
MOSFET N-CH 800V 16A TO-268 |
3.240 |
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HiPerFET™, PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 800V | 16A (Tc) | 10V | 600mOhm @ 500mA, 10V | 5V @ 4mA | 71nC @ 10V | ±30V | 4600pF @ 25V | - | 460W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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IXYS |
MOSFET N-CH 250V 82A TO-264 |
4.428 |
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PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 250V | 82A (Tc) | 10V | 35mOhm @ 41A, 10V | 5V @ 250µA | 142nC @ 10V | ±20V | 4800pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 (IXTK) | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 600V 19A ISOPLUS220 |
3.780 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 19A (Tc) | 10V | 125mOhm @ 16A, 10V | 3.5V @ 1.1mA | 70nC @ 10V | ±20V | 2500pF @ 100V | Super Junction | - | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS220™ | ISOPLUS220™ |
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Infineon Technologies |
MOSFET N-CH 650V 31A TO-247 |
7.416 |
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Automotive, AEC-Q101, CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 31A (Tc) | 10V | 105mOhm @ 18A, 10V | 3.5V @ 1.2mA | 80nC @ 10V | ±20V | 2800pF @ 100V | - | 255W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 600V 18A TO-247 |
3.996 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 600V | 18A (Tc) | 10V | 230mOhm @ 9A, 10V | 4.5V @ 1.5mA | 35nC @ 10V | ±30V | 1440pF @ 25V | - | 320W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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IXYS |
MOSFET N-CH 800V 3.6A TO-263 |
8.478 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 800V | 3.6A (Tc) | 10V | 3.6Ohm @ 500mA, 10V | 4.5V @ 1mA | 24nC @ 10V | ±20V | 685pF @ 25V | - | 100W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXFA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 650V 46A TO-247 |
6.318 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 650V | 46A (Tc) | 10V | 76mOhm @ 23A, 10V | 5.5V @ 4mA | 75nC @ 10V | ±30V | 4810pF @ 25V | - | 660W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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IXYS |
MOSFET N-CH 500V 36A TO-247 |
2.934 |
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PolarHV™ | N-Channel | MOSFET (Metal Oxide) | 500V | 36A (Tc) | 10V | 170mOhm @ 500mA, 10V | 5V @ 250µA | 85nC @ 10V | ±30V | 5500pF @ 25V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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IXYS |
MOSFET P-CH 500V 8A TO-268 |
3.454 |
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- | P-Channel | MOSFET (Metal Oxide) | 500V | 8A (Tc) | 10V | 1.2Ohm @ 4A, 10V | 5V @ 250µA | 130nC @ 10V | ±20V | 3400pF @ 25V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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ON Semiconductor |
SF3 650V 50MOHM E TO247L |
5.634 |
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FRFET®, SuperFET® III | N-Channel | MOSFET (Metal Oxide) | 650V | 58A (Tc) | 10V | 50mOhm @ 29A, 10V | 5V @ 1.7mA | 125nC @ 10V | ±30V | 5017pF @ 400V | - | 378W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Infineon Technologies |
HIGH POWER_LEGACY |
4.176 |
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CoolMOS™ CFD2 | N-Channel | MOSFET (Metal Oxide) | 650V | 43.3A (Tc) | 10V | 80mOhm @ 17.6A, 10V | 4.5V @ 1.8mA | 167nC @ 10V | ±20V | 5030pF @ 100V | - | 391W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 600V 30A TO-247 |
6.696 |
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HiPerFET™, PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 600V | 30A (Tc) | 10V | 240mOhm @ 15A, 10V | 5V @ 4mA | 82nC @ 10V | ±30V | 4000pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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IXYS |
MOSFET N-CH 500V 34A TO-247 |
8.640 |
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HiPerFET™, Polar3™ | N-Channel | MOSFET (Metal Oxide) | 500V | 34A (Tc) | 10V | 170mOhm @ 17A, 10V | 5V @ 4mA | 60nC @ 10V | ±30V | 3260pF @ 25V | - | 695W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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IXYS |
MOSFET N-CH 300V 86A TO268 |
8.496 |
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HiPerFET™, TrenchT2™ | N-Channel | MOSFET (Metal Oxide) | 300V | 86A (Tc) | 10V | 43mOhm @ 500mA, 10V | 5V @ 4mA | 180nC @ 10V | ±20V | 11300pF @ 25V | - | 860W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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IXYS |
MOSFET N-CH 150V 120A TO-268 |
4.248 |
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PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 150V | 120A (Tc) | 10V | 16mOhm @ 500mA, 10V | 5V @ 250µA | 150nC @ 10V | ±20V | 4900pF @ 25V | - | 600W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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IXYS |
MOSFET N-CH 100V 140A TO-268 |
8.046 |
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PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 100V | 140A (Tc) | 10V, 15V | 11mOhm @ 70A, 10V | 5V @ 250µA | 155nC @ 10V | ±20V | 4700pF @ 25V | - | 600W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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IXYS |
MOSFET N-CH 200V 96A TO-268 |
8.226 |
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PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 200V | 96A (Tc) | 10V | 24mOhm @ 500mA, 10V | 5V @ 250µA | 145nC @ 10V | ±20V | 4800pF @ 25V | - | 600W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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IXYS |
MOSFET N-CH 600V 30A TO247AD |
7.740 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 30A (Tc) | 10V | 125mOhm @ 16A, 10V | 3.5V @ 1.1mA | 70nC @ 10V | ±20V | 2500pF @ 10V | Super Junction | - | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXKH) | TO-3P-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 600V 35A TO247-4 |
5.220 |
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CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 600V | 35A (Tc) | 10V | 60mOhm @ 15.9A, 10V | 4V @ 800µA | 68nC @ 10V | ±20V | 2850pF @ 400V | - | 162W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-4 | TO-247-4 |
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IXYS |
MOSFET N-CH 500V 52A TO3P |
4.698 |
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PolarP2™ | N-Channel | MOSFET (Metal Oxide) | 500V | 52A (Tc) | 10V | 120mOhm @ 26A, 10V | 4.5V @ 250µA | 108nC @ 10V | ±30V | 6800pF @ 25V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 30.8A TO-220 |
4.392 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 30.8A (Ta) | 10V | 88mOhm @ 15.4A, 10V | 3.7V @ 1.5mA | 86nC @ 10V | ±30V | 3000pF @ 300V | Super Junction | 230W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 30.8A TO-220SIS |
7.092 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 30.8A (Ta) | 10V | 88mOhm @ 15.4A, 10V | 3.7V @ 1.5mA | 86nC @ 10V | ±30V | 3000pF @ 300V | Super Junction | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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IXYS |
MOSFET N-CH |
6.696 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 150V | 130A (Tc) | 10V | 9mOhm @ 65A, 10V | 4.5V @ 1.5mA | 80nC @ 10V | ±20V | 5230pF @ 25V | - | 390W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 800V 46A TO247 |
5.742 |
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SuperFET® II | N-Channel | MOSFET (Metal Oxide) | 800V | 46A (Tc) | 10V | 85mOhm @ 23A, 10V | 4.5V @ 4.6mA | 255nC @ 10V | ±20V | 10825pF @ 100V | Super Junction | 446W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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IXYS |
MOSFET N-CH 1000V 4A TO-268 |
7.380 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 4A (Tc) | 10V | 3Ohm @ 2A, 10V | 5V @ 1.5mA | 39nC @ 10V | ±20V | 1050pF @ 25V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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IXYS |
MOSFET P-CH 200V 32A TO-247 |
3.526 |
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TrenchP™ | P-Channel | MOSFET (Metal Oxide) | 200V | 32A (Tc) | 10V | 130mOhm @ 16A, 10V | 4V @ 250µA | 185nC @ 10V | ±15V | 14500pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 47A TO-247AD |
3.204 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 47A (Tc) | 10V | 65mOhm @ 24A, 10V | 4V @ 250µA | 225nC @ 10V | ±30V | 4854pF @ 100V | - | 379W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 650V 57.7A TO220 |
6.102 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 57.7A (Tc) | 10V | 74mOhm @ 13.9A, 10V | 3.5V @ 1.4mA | 17nC @ 10V | ±20V | 3020pF @ 100V | - | 480.8W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |