Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 541/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Vishay Siliconix |
MOSFET N-CH 600V 3.5A TO220FP |
4.914 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 3.5A (Tc) | 10V | 1.2Ohm @ 2.1A, 10V | 4V @ 250µA | 60nC @ 10V | ±20V | 1300pF @ 25V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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IXYS |
MOSFET N-CH 40V 220A TO-263-7 |
5.706 |
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TrenchT2™ | N-Channel | MOSFET (Metal Oxide) | 40V | 220A (Tc) | 10V | 3.5mOhm @ 50A, 10V | 4V @ 250µA | 112nC @ 10V | ±20V | 6820pF @ 25V | - | 360W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7 (IXTA..7) | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
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MICROSS/On Semiconductor |
DIE TRANS MOSFET N-CH 30V |
7.650 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IXYS |
MOSFET N-CH 650V 34A TO-247 |
3.276 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 34A (Tc) | 10V | 105mOhm @ 17A, 10V | 4.5V @ 4mA | 53nC @ 10V | ±30V | 3120pF @ 25V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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IXYS |
MOSFET N-CH 75V 230A TO-263 |
5.364 |
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TrenchT2™ | N-Channel | MOSFET (Metal Oxide) | 75V | 230A (Tc) | 10V | 4.2mOhm @ 50A, 10V | 4V @ 250µA | 178nC @ 10V | ±20V | 10500pF @ 25V | - | 480W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7 | TO-263-7, D²Pak (6 Leads + Tab) |
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IXYS |
MOSFET N-CH 40V 300A TO-220 |
5.040 |
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TrenchT2™ | N-Channel | MOSFET (Metal Oxide) | 40V | 300A (Tc) | 10V | 2.5mOhm @ 500mA, 10V | 4V @ 250µA | 145nC @ 10V | ±20V | 10700pF @ 25V | - | 480W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
TRANSISTOR N-CH |
3.006 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 650V 21.7A TO-247 |
8.082 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 21.7A (Tc) | 10V | 185mOhm @ 15.4A, 10V | 5V @ 1.2mA | 143nC @ 10V | ±20V | 3160pF @ 25V | - | 240W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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ON Semiconductor |
MOSFET N-CH 600V 20A D2PAK |
3.582 |
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Automotive, AEC-Q101, SuperFET™ | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 198mOhm @ 20A, 10V | 5V @ 250µA | 102nC @ 10V | ±30V | 3080pF @ 25V | - | 341W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
PLANAR >= 100V |
4.392 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 500V | 22A (Tc) | 10V | 230mOhm @ 13A, 10V | 4V @ 250µA | 120nC @ 10V | ±30V | 3450pF @ 25V | - | 277W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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IXYS |
MOSFET N-CH 600V 28A TO247 |
8.532 |
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HiPerFET™, Polar3™ | N-Channel | MOSFET (Metal Oxide) | 600V | 28A (Tc) | 10V | 260mOhm @ 14A, 10V | 5V @ 2.5mA | 50nC @ 10V | ±30V | 3560pF @ 25V | - | 695W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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Infineon Technologies |
HIGH POWER_LEGACY |
4.734 |
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CoolMOS™ CFD2 | N-Channel | MOSFET (Metal Oxide) | 650V | 31.2A (Tc) | 10V | 110mOhm @ 12.7A, 10V | 4.5V @ 1.3mA | 118nC @ 10V | ±20V | 3240pF @ 100V | - | 277.8W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3-41 | TO-247-3 |
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IXYS |
MOSFET N-CH 800V 3.5A TO-220 |
8.010 |
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HiPerFET™, PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 800V | 3.5A (Tc) | 10V | 1.44Ohm @ 3.5A, 10V | 5V @ 1mA | 32nC @ 10V | ±30V | 1890pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 150V 102A TO-247 |
2.466 |
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- | N-Channel | MOSFET (Metal Oxide) | 150V | 102A (Tc) | 10V | 18mOhm @ 500mA, 10V | 5V @ 1mA | 87nC @ 10V | ±20V | 5220pF @ 25V | - | 455W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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IXYS |
MOSFET P-CH 500V 10A TO-3P |
3.366 |
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PolarP™ | P-Channel | MOSFET (Metal Oxide) | 500V | 10A (Tc) | 10V | 1Ohm @ 5A, 10V | 4V @ 250µA | 50nC @ 10V | ±20V | 2840pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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IXYS |
MOSFET P-CH 200V 26A TO-3P |
8.136 |
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PolarP™ | P-Channel | MOSFET (Metal Oxide) | 200V | 26A (Tc) | 10V | 170mOhm @ 13A, 10V | 4V @ 250µA | 56nC @ 10V | ±20V | 2740pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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IXYS |
MOSFET N-CH 200V 86A TO-247 |
8.010 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 86A (Tc) | - | - | - | - | - | - | - | - | - | Through Hole | TO-247 (IXTH) | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 60V 31A TO-262 |
4.122 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 31A (Tc) | 10V | 99mOhm @ 18A, 10V | 3.5V @ 1.2mA | 80nC @ 10V | ±20V | 2800pF @ 100V | - | 255W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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IXYS |
MOSFET N-CH 500V 16A TO-247 |
5.130 |
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HiPerFET™, Polar3™ | N-Channel | MOSFET (Metal Oxide) | 500V | 16A (Tc) | 10V | 360mOhm @ 8A, 10V | 5V @ 2.5mA | 29nC @ 10V | ±30V | 1515pF @ 25V | - | 330W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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IXYS |
MOSFET N-CH 1000V 7A D2PAK |
5.652 |
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HiPerFET™, PolarP2™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 7A (Tc) | 10V | 1.9Ohm @ 3.5A, 10V | 6V @ 1mA | 47nC @ 10V | ±30V | 2590pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXFA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 60V 31A TO-262 |
7.146 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 31A (Tc) | 10V | 105mOhm @ 18A, 10V | 3.5V @ 1.2mA | 80nC @ 10V | ±20V | 2800pF @ 100V | - | 255W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 600V 31A TO-220 |
5.526 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 31A (Tc) | 10V | 105mOhm @ 18A, 10V | 3.5V @ 1.2mA | 80nC @ 10V | ±20V | 2800pF @ 100V | - | 255W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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IXYS |
MOSFET N-CH 650V 32A TO-3P |
4.014 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 32A (Tc) | 10V | 135mOhm @ 16A, 10V | 5.5V @ 250µA | 54nC @ 10V | ±30V | 2205pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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ON Semiconductor |
MOSFET N-CH 650V 20.6A TO247 |
8.064 |
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Automotive, AEC-Q101, SuperFET® II | N-Channel | MOSFET (Metal Oxide) | 650V | 20.6A (Tc) | 10V | 190mOhm @ 27A, 10V | 5V @ 250µA | 82nC @ 10V | ±20V | 3181pF @ 25V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 900V TO-247 |
5.454 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 900V | 15A (Tc) | 10V | 340mOhm @ 9.2A, 10V | 3.5V @ 1mA | 94nC @ 10V | ±20V | 2400pF @ 100V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 600V 16A TO-220FP |
5.184 |
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CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 600V | 16A (Tc) | 10V | 60mOhm @ 15.9A, 10V | 4V @ 800µA | 68nC @ 10V | ±20V | 2850pF @ 400V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 600V 35A TO220-3 |
5.166 |
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CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 600V | 35A (Tc) | 10V | 60mOhm @ 15.9A, 10V | 4V @ 800µA | 68nC @ 10V | ±20V | 2850pF @ 400V | - | 162W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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IXYS |
MOSFET N-CH 600V 24A TO-247 |
3.436 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 600V | 24A (Tc) | 10V | 175mOhm @ 12A, 10V | 4.5V @ 2.5mA | 47nC @ 10V | ±30V | 1910pF @ 25V | - | 400W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 200V 102A TO3P |
2.592 |
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TrenchHV™ | N-Channel | MOSFET (Metal Oxide) | 200V | 102A (Tc) | - | 23mOhm @ 500mA, 10V | 4.5V @ 1mA | 114nC @ 10V | - | 6800pF @ 25V | - | 750W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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IXYS |
MOSFET N-CH 250V 102A TO-3P |
8.712 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 102A (Tc) | - | - | - | - | - | - | - | - | - | Through Hole | TO-3P | TO-3P-3, SC-65-3 |