Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 530/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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Infineon Technologies |
MOSFET N-CH BARE DIE |
4.284 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Rohm Semiconductor |
MOSFET N-CH 10V DRIVE LPTS |
3.816 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 21A (Tc) | - | 220mOhm @ 10.5A, 10V | 4.5V @ 1mA | 64nC @ 10V | - | 2300pF @ 25V | - | 100W (Tc) | 150°C (TJ) | Surface Mount | LPTS | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 800V 7A TO-220 |
6.192 |
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HiPerFET™, PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 800V | 7A (Tc) | 10V | 1.44Ohm @ 3.5A, 10V | 5V @ 1mA | 32nC @ 10V | ±30V | 1890pF @ 25V | - | 200W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 1200V 1A TO-263 |
3.042 |
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PolarVHV™ | N-Channel | MOSFET (Metal Oxide) | 1200V | 1A (Tc) | 10V | 20Ohm @ 500mA, 10V | 4.5V @ 50µA | 17.6nC @ 10V | ±20V | 550pF @ 25V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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|
ON Semiconductor |
MOSFET N-CH 40V 100A TO-220 |
4.212 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 4.5V, 10V | 2.2mOhm @ 80A, 10V | 3V @ 250µA | 450nC @ 10V | ±20V | 24740pF @ 25V | - | 306W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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|
ON Semiconductor |
MOSFET N-CH 60V 300A D2PAK |
3.276 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 60V | 300A (Tc) | 10V | 1.4mOhm @ 39A, 10V | 4V @ 250µA | 243nC @ 10V | ±20V | 19250pF @ 30V | - | 3.8W (Ta), 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7 | TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies |
MOSFET N-CH 120V 1A SAWN ON FOIL |
2.160 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 120V | 1A (Tj) | 10V | 100mOhm @ 2A, 10V | 4V @ 275µA | - | - | - | - | - | - | Surface Mount | Sawn on foil | Die |
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Rohm Semiconductor |
MOSFET N-CH 10V DRIVE LPTS |
8.622 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 18A (Ta) | 10V | 270mOhm @ 9A, 10V | 4.5V @ 1mA | 55nC @ 10V | ±30V | 2050pF @ 25V | - | 100W (Tc) | 150°C (TJ) | Surface Mount | LPTS | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 600V 13A TO220AB |
7.992 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 13A (Tc) | 10V | 300mOhm @ 6.6A, 10V | 3.5V @ 440µA | 30nC @ 10V | ±20V | 1100pF @ 100V | Super Junction | - | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 500V 16A TO-3P |
2.286 |
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PolarHV™ | N-Channel | MOSFET (Metal Oxide) | 500V | 16A (Tc) | 10V | 400mOhm @ 8A, 10V | 5.5V @ 250µA | 43nC @ 10V | ±30V | 2250pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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ON Semiconductor |
MOSFET N-CH 40V 8PQFN |
2.484 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
MOSFET N-CH 40V 8PQFN |
3.798 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
MOSFET N-CH 60V 8PQFN |
3.618 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
MOSFET N-CH 60V 8PQFN |
3.204 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IXYS |
MOSFET N-CH 600V 6.5A TO220FP |
7.218 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 6.5A (Tc) | 10V | 300mOhm @ 6.6A, 10V | 3.5V @ 440µA | 30nC @ 10V | ±20V | 1100pF @ 100V | Super Junction | - | -55°C ~ 150°C (TJ) | Through Hole | TO-220ABFP | TO-220-3 Full Pack, Isolated Tab |
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IXYS |
MOSFET N-CH 100V 130A TO-220 |
3.472 |
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GigaMOS™, HiPerFET™, TrenchT2™ | N-Channel | MOSFET (Metal Oxide) | 100V | 130A (Tc) | 10V | 9.1mOhm @ 65A, 10V | 4.5V @ 1mA | 130nC @ 10V | ±20V | 6600pF @ 25V | - | 360W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 600V 29A TO247 |
4.752 |
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SuperFET® II | N-Channel | MOSFET (Metal Oxide) | 600V | 29A (Tc) | 10V | 125mOhm @ 14.5A, 10V | 3.5V @ 250µA | 95nC @ 10V | ±20V | 2990pF @ 380V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 900V 9A TO247 |
5.634 |
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- | N-Channel | MOSFET (Metal Oxide) | 900V | 9A (Tc) | 10V | 1.3Ohm @ 4.5A, 10V | 4.5V @ 250µA | 58nC @ 10V | ±30V | 2560pF @ 25V | - | 368W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Infineon Technologies |
HIGH POWER_LEGACY |
7.614 |
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CoolMOS™ CFD2 | N-Channel | MOSFET (Metal Oxide) | 650V | 22.4A (Tc) | 10V | 150mOhm @ 9.3A, 10V | 4.5V @ 900µA | 86nC @ 10V | ±20V | 2340pF @ 100V | - | 195.3W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3-41 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 60V 120A D2PAK |
8.622 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 4.2mOhm @ 75A, 10V | 4V @ 150µA | 120nC @ 10V | ±20V | 4520pF @ 50V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 650V 24A TO220AB |
8.658 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 24A (Tc) | 10V | 156mOhm @ 12A, 10V | 4V @ 250µA | 122nC @ 10V | ±20V | 2656pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 450V 19A TO-220SIS |
6.642 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 450V | 19A (Ta) | 10V | 250mOhm @ 9.5A, 10V | 4V @ 1mA | 45nC @ 10V | ±30V | 2600pF @ 25V | - | 50W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 100V 180A TO263-7 |
6.516 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 180A | 6V, 10V | 2.5mOhm @ 100A, 10V | 3.5V @ 275µA | 206nC @ 10V | ±20V | 14800pF @ 50V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7 | TO-263-7, D²Pak (6 Leads + Tab) |
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IXYS |
MOSFET N-CH 650V 12A TO-247 |
3.436 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 12A (Tc) | 10V | 300mOhm @ 6A, 10V | 5V @ 250µA | 17nC @ 10V | ±30V | 1100pF @ 25V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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|
Vishay Siliconix |
MOSFET N-CH 650V 24A D2PAK |
2.124 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 24A (Tc) | 10V | 145mOhm @ 12A, 10V | 4V @ 250µA | 122nC @ 10V | ±30V | 2740pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 600V 28A TO247 |
8.010 |
|
SuperFET® II | N-Channel | MOSFET (Metal Oxide) | 600V | 28A (Tc) | 10V | 130mOhm @ 14A, 10V | 3.5V @ 250µA | 70nC @ 10V | ±20V | 3590pF @ 380V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 100V 180A D2PAK |
5.580 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 180A (Tc) | 4.5V, 10V | 4.3mOhm @ 110A, 10V | 2.5V @ 250µA | 130nC @ 4.5V | ±16V | 11360pF @ 50V | - | 370W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 800V 10A TO-263 |
6.072 |
|
HiPerFET™, PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 800V | 10A (Tc) | 10V | 1.1Ohm @ 5A, 10V | 5.5V @ 2.5mA | 40nC @ 10V | ±30V | 2050pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXFA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 300V 44A TO-220 |
3.582 |
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- | N-Channel | MOSFET (Metal Oxide) | 300V | 44A (Tc) | - | - | - | - | - | - | - | - | - | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 200V 72A TO-220 |
3.240 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 72A (Tc) | - | - | - | - | - | - | - | - | - | Through Hole | TO-220AB | TO-220-3 |