Transistor - FET, MOSFET - Singolo
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Mostra filtri
Ripristina filtri
Applica filtri
CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 526/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
MOSFET N-CH 150V 83A TO262-3 |
5.328 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 150V | 83A (Tc) | 8V, 10V | 11.1mOhm @ 83A, 10V | 4V @ 160µA | 55nC @ 10V | ±20V | 3230pF @ 75V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 550V 14A TO-220SIS |
3.490 |
|
π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 550V | 14A (Ta) | 10V | 370mOhm @ 7A, 10V | 4V @ 1mA | 40nC @ 10V | ±30V | 2300pF @ 25V | - | 50W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
|
|
|
ON Semiconductor |
MOSFET N-CH 600V 22A TO247 |
3.544 |
|
SuperFET® II | N-Channel | MOSFET (Metal Oxide) | 600V | 22A (Tc) | 10V | 170mOhm @ 11A, 10V | 3.5V @ 250µA | 55nC @ 10V | ±20V | 2860pF @ 380V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 13.7A I2PAK |
3.258 |
|
DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 650V | 13.7A (Ta) | 10V | 300mOhm @ 6.9A, 10V | 4.5V @ 690µA | 40nC @ 10V | ±30V | 1300pF @ 300V | - | 130W (Tc) | 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Infineon Technologies |
HIGH POWER_NEW |
8.190 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
ON Semiconductor |
MOSFET P-CH 40V 110A D2PAK |
4.104 |
|
Automotive, AEC-Q101, PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 40V | 110A (Tc) | 4.5V, 10V | 2.6mOhm @ 80A, 10V | 3V @ 250µA | 255nC @ 10V | ±16V | 8320pF @ 20V | - | 333W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 40V 120A TO262-3 |
3.562 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 10V | 2.3mOhm @ 80A, 10V | 4V @ 230µA | 210nC @ 10V | ±20V | 14300pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
ON Semiconductor |
MOSFET N-CH 30V 8SOFL |
3.312 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 7.9A (Ta), 38A (Tc) | 4.5V, 10V | 7.3mOhm @ 30A, 10V | 2.2V @ 250µA | 8nC @ 4.5V | ±20V | 913pF @ 15V | - | 920mW (Ta), 20.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
|
|
|
Vishay Siliconix |
MOSFET N-CH 800V D2PAK TO-263 |
6.606 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
ON Semiconductor |
MOSFET N-CH 40V D2PAK-7 |
3.526 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 2.4mOhm @ 80A, 10V | 3V @ 250µA | 109nC @ 10V | ±20V | 7300pF @ 25V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7 | TO-263-7, D²Pak (6 Leads + Tab) |
|
|
|
Infineon Technologies |
MOSFET N-CH 60V 120A TO220-3 |
3.150 |
|
Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 2.4mOhm @ 100A, 10V | 4V @ 200µA | 270nC @ 10V | ±20V | 21900pF @ 25V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
|
|
|
ON Semiconductor |
MOSFET N-CH 600V 20A TO-3P |
7.056 |
|
SuperFET™ | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 190mOhm @ 10A, 10V | 5V @ 250µA | 98nC @ 10V | ±30V | 3080pF @ 25V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
|
|
|
Infineon Technologies |
MOSFET N-CHANNEL_100+ |
8.892 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CHANNEL_100+ |
7.326 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH 600V 11A TO220FP-3 |
7.542 |
|
CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 120mOhm @ 7.8A, 10V | 4V @ 390µA | 34nC @ 10V | ±20V | 1500pF @ 400V | - | 32W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
|
|
|
Infineon Technologies |
MOSFET N-CH 600V 19A TO220-3 |
6.930 |
|
CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 600V | 19A (Tc) | 10V | 120mOhm @ 7.8A, 10V | 4V @ 390µA | 34nC @ 10V | ±20V | 1500pF @ 400V | - | 92W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 40V 195A TO-262 |
3.762 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 195A (Tc) | 10V | 1.2mOhm @ 100A, 10V | 3.9V @ 250µA | 450nC @ 10V | ±20V | 14240pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-262 | TO-262-3 Short Leads, I²Pak |
|
|
|
Infineon Technologies |
MOSFET N-CH 200V 72A TO-262 |
7.524 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 72A (Tc) | - | 22mOhm @ 44A, 10V | 5V @ 250µA | 150nC @ 10V | - | 5380pF @ 50V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
IXYS |
MOSFET N-CH |
6.336 |
|
- | N-Channel | MOSFET (Metal Oxide) | 1000V | 1.6A (Tj) | 0V | 10Ohm @ 800mA, 0V | 4.5V @ 100µA | 27nC @ 5V | ±20V | 645pF @ 10V | Depletion Mode | 100W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263HV | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 24V 195A D2PAK |
8.028 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 24V | 195A (Tc) | 10V | 1.65mOhm @ 195A, 10V | 4V @ 250µA | 240nC @ 10V | ±20V | 7590pF @ 24V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 600V TO220FP-3 |
3.526 |
|
CoolMOS™ P6 | N-Channel | MOSFET (Metal Oxide) | 600V | 30A (Tc) | 10V | 125mOhm @ 11.6A, 10V | 4.5V @ 960µA | 56nC @ 10V | ±20V | 2660pF @ 100V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
|
|
|
Infineon Technologies |
MOSFET N-CH 600V TO220-3 |
3.402 |
|
CoolMOS™ P6 | N-Channel | MOSFET (Metal Oxide) | 600V | 30A (Tc) | 10V | 125mOhm @ 11.6A, 10V | 4.5V @ 960µA | 56nC @ 10V | ±20V | 2660pF @ 100V | - | 219W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 60V 29A TO262-3 |
3.546 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 29A (Ta), 120A (Tc) | 6V, 10V | 2mOhm @ 100A, 10V | 2.8V @ 143µA | 106nC @ 10V | ±20V | 7800pF @ 30V | - | 3W (Ta), 214W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
IXYS |
MOSFET N-CH 500V 16A TO-220 |
8.118 |
|
PolarHV™ | N-Channel | MOSFET (Metal Oxide) | 500V | 16A (Tc) | 10V | 400mOhm @ 8A, 10V | 5.5V @ 250µA | 43nC @ 10V | ±30V | 2250pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
|
IXYS |
MOSFET N-CH 600V 14A TO-220 |
8.982 |
|
PolarHV™ | N-Channel | MOSFET (Metal Oxide) | 600V | 14A (Tc) | 10V | 550mOhm @ 7A, 10V | 5.5V @ 250µA | 36nC @ 10V | ±30V | 2500pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
|
IXYS |
MOSFET N-CH 40V 270A |
7.308 |
|
TrenchT4™ | N-Channel | MOSFET (Metal Oxide) | 40V | 270A (Tc) | 10V | 2.2mOhm @ 50A, 10V | 4V @ 250µA | 182nC @ 10V | ±15V | 9140pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263AA | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
IXYS |
40V/270A TRENCH T POWER MOSFET, |
5.994 |
|
TrenchT4™ | N-Channel | MOSFET (Metal Oxide) | 40V | 270A (Tc) | 10V | 2.2mOhm @ 50A, 10V | 4V @ 250µA | 182nC @ 10V | ±15V | 9140pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7 | TO-263-7, D²Pak (6 Leads + Tab) |
|
|
|
ON Semiconductor |
MOSFET N-CH 100V 200A 8PSOF |
3.418 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 200A (Tc) | 10V | 2.6mOhm @ 80A, 10V | 4V @ 250µA | 116nC @ 10V | ±20V | 9265pF @ 50V | - | 3.5W (Ta), 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-HPSOF | 8-PowerSFN |
|
|
|
ON Semiconductor |
MOSFET N-CH 650V 20.6A TO247 |
2.430 |
|
FRFET®, SuperFET® II | N-Channel | MOSFET (Metal Oxide) | 650V | 20.6A (Tc) | 10V | 190mOhm @ 10A, 10V | 5V @ 2mA | 78nC @ 10V | ±20V | 3225pF @ 100V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 Long Leads | TO-247-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 40V 320A D2PAK-7 |
3.096 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 240A (Tc) | 10V | 1.6mOhm @ 160A, 10V | 4V @ 250µA | 260nC @ 10V | ±20V | 6930pF @ 25V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |