Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 491/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
LOW POWER_LEGACY |
2.376 |
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CoolMOS™ CFD2 | N-Channel | MOSFET (Metal Oxide) | 650V | 10.9A (Tc) | 10V | 340mOhm @ 4.4A, 10V | 4.5V @ 400µA | 41nC @ 10V | ±20V | 1100pF @ 100V | - | 104.2W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-VSON-4 | 4-PowerTSFN |
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IXYS |
MOSFET N-CH 85V 50A TO-251 |
4.050 |
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- | N-Channel | MOSFET (Metal Oxide) | 85V | 50A (Tc) | - | - | 4V @ 25µA | - | - | - | - | - | - | Through Hole | TO-251 | TO-251-3 Short Leads, IPak, TO-251AA |
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IXYS |
MOSFET N-CH 75V 55A TO-251 |
2.412 |
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- | N-Channel | MOSFET (Metal Oxide) | 75V | 55A (Tc) | - | - | 4V @ 25µA | - | - | - | - | - | - | Through Hole | TO-251 | TO-251-3 Short Leads, IPak, TO-251AA |
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IXYS |
MOSFET N-CH 55V 64A TO-251 |
5.814 |
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- | N-Channel | MOSFET (Metal Oxide) | 55V | 64A (Tc) | - | - | 4V @ 25µA | - | - | - | - | - | - | Through Hole | TO-251 | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET N-CH 25V 40A POWER33 |
7.254 |
|
PowerTrench®, SyncFET™ | N-Channel | MOSFET (Metal Oxide) | 25V | 22.5A (Ta), 40A (Tc) | 4.5V, 10V | 3.15mOhm @ 22.5A, 10V | 3V @ 1mA | 44nC @ 10V | ±20V | 2705pF @ 13V | - | 2.3W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | Power33 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N CH 55V 69A TO-220AB |
5.742 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 69A (Tc) | 10V | 14mOhm @ 40A, 10V | 4V @ 100µA | 63nC @ 10V | ±20V | 1900pF @ 25V | - | 160W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 75V 80A TO263-3 |
7.488 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 80A (Tc) | 10V | 5.5mOhm @ 80A, 10V | 4V @ 90µA | 70nC @ 10V | ±20V | 4800pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 60V 79A TO-220AB |
8.334 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 79A (Tc) | - | 8.4mOhm @ 47A, 10V | 4V @ 100µA | 69nC @ 10V | - | 2290pF @ 50V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 60V 14A TO220FP |
6.822 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 14A (Tc) | 4V, 5V | 100mOhm @ 8.4A, 5V | 2V @ 250µA | 18nC @ 5V | ±10V | 870pF @ 25V | - | 37W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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ON Semiconductor |
MOSFET N CH 600V 15A TO-220F |
4.212 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Diodes Incorporated |
MOSFET N-CH 650V 8A TO220AB |
5.292 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 650V | 8A (Tc) | 10V | 1.3Ohm @ 4A, 10V | 4V @ 250µA | 30nC @ 10V | ±30V | 1217pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 150V 25A TO263 |
4.932 |
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Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 25A (Tc) | 10V | 52mOhm @ 15A, 10V | 4V @ 250µA | 51nC @ 10V | ±20V | 2360pF @ 25V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 60V 120A TO263-3 |
8.190 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 3.2mOhm @ 100A, 10V | 4V @ 120µA | 160nC @ 10V | ±20V | 13150pF @ 25V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET P-CH TO263-3 |
7.668 |
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Automotive, AEC-Q101, OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 4.9mOhm @ 80A, 10V | 4V @ 250µA | 151nC @ 10V | ±20V | 10300pF @ 25V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET P-CH TO263-3 |
8.262 |
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Automotive, AEC-Q101, OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 4.5V, 10V | 4.4mOhm @ 80A, 10V | 2.2V @ 250µA | 176nC @ 10V | ±16V | 3800pF @ 25V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 550V 10A TO220-3 |
5.238 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 550V | 10A (Tc) | 10V | 350mOhm @ 5.6A, 10V | 3.5V @ 370µA | 25nC @ 10V | ±20V | 1020pF @ 100V | - | 89W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 500V 10A TO220-3 |
5.022 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 500V | 10A (Tc) | 10V | 350mOhm @ 5.6A, 10V | 3.5V @ 370µA | 25nC @ 10V | ±20V | 1020pF @ 100V | - | 32W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Infineon Technologies |
LOW POWER_LEGACY |
8.640 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 650V 6.2A TO-220 |
5.742 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 6.2A (Tc) | 10V | 750mOhm @ 3.9A, 10V | 3.9V @ 260µA | 31nC @ 10V | ±20V | 620pF @ 25V | - | 32W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 150V 51A D2PAK |
5.166 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 51A (Tc) | 10V | 32mOhm @ 36A, 10V | 5V @ 250µA | 89nC @ 10V | ±30V | 2770pF @ 25V | - | 3.8W (Ta), 230W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 17A DPAK |
6.156 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 17A (Tc) | 4V, 10V | 105mOhm @ 10A, 10V | 2V @ 250µA | 34nC @ 5V | ±16V | 800pF @ 25V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 30V 64A U8FL |
8.100 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 16.3A (Ta), 64A (Tc) | - | 3.5mOhm @ 20A, 10V | 2.3V @ 250µA | 29.4nC @ 10V | - | 2075pF @ 15V | - | - | - | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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ON Semiconductor |
MOSFET N-CH 40V 41A 235A 5DFN |
7.704 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 41A (Ta), 235A (Tc) | 10V | 1.3mOhm @ 50A, 10V | 3.5V @ 250µA | 65nC @ 10V | ±20V | 4300pF @ 25V | - | 3.8W (Ta), 128W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Vishay Siliconix |
MOSFET N-CH 25V 40A 8-SOIC |
3.544 |
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- | N-Channel | MOSFET (Metal Oxide) | 25V | 40A (Tc) | 4.5V, 10V | 2.7mOhm @ 20A, 10V | 2.6V @ 250µA | 161nC @ 10V | ±16V | 11175pF @ 15V | - | 3.5W (Ta), 7.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET P-CH 30V 10.5A 8-SOIC |
7.650 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 10.5A (Ta) | 4.5V, 10V | 7.5mOhm @ 13A, 10V | 3V @ 250µA | 95nC @ 5V | ±20V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET P-CH 20V 10A 8-SOIC |
8.892 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 10A (Ta) | 1.8V, 4.5V | 7.5mOhm @ 14A, 4.5V | 900mV @ 600µA | 175nC @ 5V | ±8V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 25V 40A 8-SOIC |
7.794 |
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- | N-Channel | MOSFET (Metal Oxide) | 25V | 40A (Tc) | 4.5V, 10V | 2.7mOhm @ 20A, 10V | 2.6V @ 250µA | 161nC @ 10V | ±16V | 11175pF @ 15V | - | 3.5W (Ta), 7.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 30V 9A PPAK SO-8 |
5.634 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 9A (Ta) | 4.5V, 10V | 9.5mOhm @ 15A, 10V | 3V @ 250µA | 15nC @ 4.5V | ±20V | - | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 30V 9A PPAK SO-8 |
7.596 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 9A (Ta) | 4.5V, 10V | 9.5mOhm @ 15A, 10V | 3V @ 250µA | 15nC @ 4.5V | ±20V | - | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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ON Semiconductor |
MOSFET N-CH 800V 3.3A TO-220F |
5.940 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 800V | 3.3A (Tc) | 10V | 1.95Ohm @ 1.65A, 10V | 5V @ 250µA | 31nC @ 10V | ±30V | 1500pF @ 25V | - | 51W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |