Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 42/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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ON Semiconductor |
MOSFET N-CH 75V 80A TO-220AB |
34.638 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 75V | 15A (Tc) | 6V, 10V | 4.7mOhm @ 80A, 10V | 4V @ 250µA | 138nC @ 10V | ±20V | 6600pF @ 25V | - | 310W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET P-CH 60V 80A TO-220 |
13.524 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 60V | 80A (Tc) | 10V | 23mOhm @ 64A, 10V | 4V @ 5.5mA | 173nC @ 10V | ±20V | 5033pF @ 25V | - | 340W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 600V 37.9A TO263 |
23.394 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 37.9A (Tc) | 10V | 99mOhm @ 18.1A, 10V | 3.5V @ 1.21mA | 119nC @ 10V | ±20V | 2660pF @ 100V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 120A TO263-3 |
22.764 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 120A (Tc) | 6V, 10V | 2mOhm @ 100A, 10V | 3.8V @ 270µA | 210nC @ 10V | ±20V | 15600pF @ 50V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Texas Instruments |
MOSFET N-CH 100V 200A TO263 |
1.764 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 100V | 200A (Ta) | 6V, 10V | 2.4mOhm @ 100A, 10V | 3.2V @ 250µA | 153nC @ 10V | ±20V | 12000pF @ 50V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DDPAK/TO-263-3 | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA |
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Alpha & Omega Semiconductor |
MOSFET N-CH 100V 140A TO220 |
57.798 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 18A (Ta), 140A (Tc) | 10V | 3.5mOhm @ 20A, 10V | 4.1V @ 250µA | 126nC @ 10V | ±20V | 9550pF @ 50V | - | 2.1W (Ta), 500W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 55V 80A TO-220 |
17.580 |
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STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 5V, 10V | 6.5mOhm @ 40A, 10V | 1V @ 250µA | 136nC @ 5V | ±16V | 4850pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 60V 300A 8HSOF |
71.916 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 300A (Tc) | 6V, 10V | 0.75mOhm @ 150A, 10V | 3.3V @ 280µA | 287nC @ 10V | ±20V | 16000pF @ 30V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOF-8-1 | 8-PowerSFN |
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Infineon Technologies |
MOSFET N-CH 100V 120A TO-247AC |
9.768 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 120A (Tc) | 10V | 6mOhm @ 75A, 10V | 4V @ 150µA | 170nC @ 10V | ±20V | 6860pF @ 50V | - | 280W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 100V 110A TO-220 |
37.332 |
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STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 100V | 110A (Tc) | 10V | 10.5mOhm @ 60A, 10V | 4V @ 250µA | 233nC @ 10V | ±20V | 5200pF @ 25V | - | 312W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V 120A TO-220AB |
28.974 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 120A (Tc) | 10V | 4.5mOhm @ 75A, 10V | 4V @ 250µA | 210nC @ 10V | ±20V | 9620pF @ 50V | - | 370W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 600V 27A TO220 |
30.894 |
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aMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 27A (Tc) | 10V | 160mOhm @ 13.5A, 10V | 4V @ 250µA | 26nC @ 10V | ±30V | 1294pF @ 100V | - | 357W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V 180A D2PAK-7 |
71.544 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 180A (Tc) | 6V, 10V | 1.7mOhm @ 100A, 10V | 3.8V @ 279µA | 210nC @ 10V | ±20V | 15600pF @ 50V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7 | TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies |
MOSFET N-CH 250V 64A TO263-3 |
18.468 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 250V | 64A (Tc) | 10V | 20mOhm @ 64A, 10V | 4V @ 270µA | 89nC @ 10V | ±20V | 7000pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 60V 195A TO-220AB |
24.594 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 195A (Tc) | 10V | 2.5mOhm @ 170A, 10V | 4V @ 250µA | 300nC @ 10V | ±20V | 8970pF @ 50V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 150V 79A TO-220AB |
22.500 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 150V | 8A (Ta), 79A (Tc) | 6V, 10V | 16mOhm @ 33A, 10V | 4V @ 250µA | 107nC @ 10V | ±20V | 5870pF @ 25V | - | 310W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 600V 26A TO220-3 |
18.216 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 600V | 26A (Tc) | 10V | 120mOhm @ 8.2A, 10V | 4V @ 410µA | 36nC @ 10V | ±20V | 1544pF @ 400V | - | 95W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Cree/Wolfspeed |
MOSFET N-CH 900V 11.5A |
22.812 |
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C3M™ | N-Channel | SiCFET (Silicon Carbide) | 900V | 11.5A (Tc) | 15V | 360mOhm @ 7.5A, 15V | 3.5V @ 1.2mA | 9.5nC @ 15V | +18V, -8V | 150pF @ 600V | - | 54W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 200V 88A TO263-3 |
22.164 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 200V | 88A (Tc) | 10V | 10.7mOhm @ 88A, 10V | 4V @ 270µA | 87nC @ 10V | ±20V | 7100pF @ 100V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 600V 10A TO-220 |
19.482 |
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FDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 450mOhm @ 5A, 10V | 5V @ 250µA | 30nC @ 10V | ±25V | 850pF @ 50V | - | 90W (Tc) | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 600V 11A TO-220FP |
19.416 |
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MDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 360mOhm @ 5.5A, 10V | 4V @ 250µA | 30nC @ 10V | ±25V | 790pF @ 50V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Alpha & Omega Semiconductor |
MOSFET N-CH 600V 27A TO220F |
17.856 |
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aMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 27A (Tc) | 10V | 160mOhm @ 13.5A, 10V | 4V @ 250µA | 26nC @ 10V | ±30V | 1294pF @ 100V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3F | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 60V 195A TO-220AB |
17.904 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 195A (Tc) | 4.5V, 10V | 2.4mOhm @ 165A, 10V | 2.5V @ 250µA | 140nC @ 4.5V | ±16V | 11210pF @ 50V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 80V 300A 8HSOF |
29.388 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 300A (Tc) | 6V, 10V | 1.2mOhm @ 150A, 10V | 3.8V @ 280µA | 223nC @ 10V | ±20V | 17000pF @ 40V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOF-8-1 | 8-PowerSFN |
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STMicroelectronics |
MOSFET N-CH 1KV 3.5A TO220FP |
17.712 |
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SuperMESH3™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 3.5A (Tc) | 10V | 3.7Ohm @ 1.75A, 10V | 4.5V @ 100µA | 59nC @ 10V | ±30V | 1154pF @ 25V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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EPC |
GANFET N-CH 80V 90A DIE |
48.888 |
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eGaN® | N-Channel | GaNFET (Gallium Nitride) | 80V | 90A (Ta) | 5V | 2.2mOhm @ 29A, 5V | 2.5V @ 13mA | 19nC @ 5V | +6V, -4V | 1940pF @ 40V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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STMicroelectronics |
MOSFET N-CH 200V 40A TO-220FP |
23.814 |
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STripFET™ | N-Channel | MOSFET (Metal Oxide) | 200V | 40A (Tc) | 10V | 45mOhm @ 20A, 10V | 4V @ 250µA | 75nC @ 10V | ±20V | 2500pF @ 25V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 135V 160A |
18.450 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 135V | 160A (Tc) | 10V | 5.9mOhm @ 96A, 10V | 4V @ 250µA | 315nC @ 10V | ±20V | 11690pF @ 50V | - | 500W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK-7 | TO-263-7, D²Pak (6 Leads + Tab) Variant |
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STMicroelectronics |
MOSFET N-CH 500V 14A TO-247 |
10.716 |
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SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 500V | 14A (Tc) | 10V | 380mOhm @ 6A, 10V | 4.5V @ 100µA | 92nC @ 10V | ±30V | 2000pF @ 25V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 150V 78A TO-247AC |
12.522 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 78A (Tc) | 10V | 15.5mOhm @ 33A, 10V | 5V @ 250µA | 110nC @ 10V | ±30V | 4460pF @ 25V | - | 310W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |